Document Outline
- COVER
- FEATURES
- PACKAGE DIMENSIONS
- EQUIVALENT CURCUIT
- ABSOLUTE MAXIMUM RATINGS (TA = 25 degree)
- ELECTRICAL CHARACTERISTICS (TA = 25 degree)
- TYPICAL CHARACTERISTICS (TA = 25 degree)
- REFERENCE
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2053
The 2SK2053 is an N-channel vertical MOS FET. Because
it can be driven by a voltage as low as 1.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.
FEATURES
New package intermediate between small signal and
power types
Gate can be driven by 1.5 V
Low ON resistance
R
DS(on)
= 0.40
MAX.
@ V
GS
= 1.5 V, I
D
= 1.0 A
R
DS(on)
= 0.12
MAX.
@ V
GS
= 4.0 V, I
D
= 2.5 A
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
V
DSS
V
GS
= 0
16
V
Gate to Source Voltage
V
GSS
V
DS
= 0
7.0
V
Drain Current (DC)
I
D(DC)
5.0
A
Drain Current (Pulse)
I
D(pulse)
PW
10 ms, duty cycle
50 %
10.0
A
Total Power Dissipation
P
T
7.5 cm
2
0.7 mm ceramic substrate used
2.0
W
Channel Temperature
T
ch
150
C
Operating Temperature
T
opt
20 to +60
C
Storage Temperature
T
stg
55 to +150
C
Document No. D11224EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
PACKAGE DIMENSIONS (in mm)
2.0 0.2
5.7 0.1
3.65 0.1
1.0 0.5 0.1
0.55
2.1
4.2
0.5 0.1
0.85
0.1
S
D
G
5.4 0.25
1.5 0.1
0.4 0.05
Marking: NA1
EQUIVALENT CURCUIT
Source (S)
Internal
diode
Gate
protection
diode
Gate (G)
Drain (D)
PIN
CONNECTIONS
S:
D:
G:
Source
Drain
Gate
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
2SK2053
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-Off Current
I
DSS
V
DS
= 16 V, V
GS
= 0
1.0
A
Gate Leakage Current
I
GSS
V
GS
=
7.0 V, V
DS
= 0
3.0
A
Gate Cut-Off Voltage
V
GS(off)
V
DS
= 3 V, I
D
= 1 mA
0.5
0.8
1.1
V
Forward Transfer Admittance
|y
fs
|
V
DS
= 3 V, I
D
= 2.5 A
4
S
Drain to Source On-State Resistance
R
DS(on)1
V
GS
= 1.5 V, I
D
= 0.5 A
0.19
0.40
Drain to Source On-State Resistance
R
DS(on)2
V
GS
= 2.5 V, I
D
= 2.5 A
0.08
0.15
Drain to Source On-State Resistance
R
DS(on)3
V
GS
= 4.0 V, I
D
= 2.5 A
0.06
0.12
Input Capacitance
C
iss
V
DS
= 3 V, V
GS
= 0, f = 1.0 MHz
730
pF
Output Capacitance
C
oss
640
pF
Reverse Transfer Capacitance
C
rss
230
pF
Turn-ON Delay Time
t
d(on)
V
DD
= 3 V, I
D
= 2.5 A, V
GS(on)
= 3 V,
85
ns
Rise Time
t
r
R
G
= 10
, R
L
= 1.2
450
ns
Turn-OFF Delay Time
t
d(off)
280
ns
Fall Time
t
f
310
ns
2SK2053
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
d
T
- Derating Factor - %
0
100
80
60
40
20
T
A
- Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drain Current - A
1
10
V
DS
- Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
I
D
- Drain Current - A
0
5
4
3
2
1
V
DS
- Drain to Source Voltage - V
TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
0
10
1
0.1
0.01
0.001
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|y
fs
| - Forward Transfer Admittance - S
0.001
10
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
- Drain to Source On-State Resistance -
0.01
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I
D
- Drain Current - A
120
30
60
90
150
5
2
1
0.5
0.2
0.1
2
5
10
20
50
100
PW = 1 ms
DC
10 ms
100 ms
Single
pulse
0.2
0.4
0.6
0.8
1.0
4.0 V
2.5 V
2.0 V
1.8 V
V
GS
= 1.5 V
3.0 V
0.5
1
1.5
2
2.5
V
DS
= 3 V
T
A
= 75 C
T
A
= 75 C
25 C
25C
3
1
0.3
0.1
0.03
0.01
0.003
0.01
0.03
0.1
0.3
1
T
A
= 25 C
25 C
75 C
V
DS
= 3 V
0.1
0.03
0.3
1
3
10
25 C
25 C
V
GS
= 1.5 V
2SK2053
4
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
- Drain to Source On-State Resistance -
0.01
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
- Drain to Source On-State Resistance -
0.01
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-State Resistance -
0
0.5
0.4
0.3
0.2
0.1
V
GS
- Gate to Source Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
I
SD
- Diode Forward Current - A
0.2
10
1
0.1
0.01
0.001
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
C
iss
, C
rss
, C
oss
- Capacitance - pF
1
1 000
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
0.1
1 000
I
D
- Drain Current - A
0.03
0.1
0.3
1
3
10
T
A
= 75 C
25 C
25 C
V
GS
= 2.5 V
0.03
0.1
0.3
1
3
10
T
A
= 75 C
25 C
25 C
V
GS
= 4.0 V
2
4
6
t
r
5 A
0.4
0.6
0.8
1.0
1.2
500
200
100
50
20
10
2
5
10
20
50
100
V
GS
= 0
f = 1 MHz
C
iss
C
oss
C
rss
500
200
100
50
20
10
0.2
0.5
1
2
5
10
V
DD
= 3 V
V
GS(on)
= 3 V
t
f
t
d(off)
t
d(on)
I
D
= 1 A, 2.5 A
2SK2053
5
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
TEI-1202
Quality grade on NEC semiconductor devices
IEI-1209
Semiconductor device mounting technology manual
C10535E
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
X10679E
2SK2053
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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
[MEMO]
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