Document Outline
- COVER
- FEATURES
- PACKAGE DIMENSIONS
- EQUIVALENT CIRCUIT
- ABSOLUTE MAXIMUM RATINGS (TA = 25 degree)
- ELECTRICAL CHARACTERISTICS (TA = 25 degree)
- TYPICAL CHARACTERISTICS (TA = 25 degree)
- REFERENCE
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2070
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
PACKAGE DIMENSIONS (in mm)
7.0 MAX.
1.2
2.0
9.0 MAX.
12.0 MIN.
0.55 0.1
0.8 0.1
0.6 0.1
3.0 MAX.
0.6 0.1
0.6 0.1
1.7 1.7
1.5
4.0 MAX.
G D S
EQUIVALENT CIRCUIT
Source (S)
Internal
diode
Gate
protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
The 2SK2070 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators, such as
motors and DC/DC converters.
FEATURES
New package intermediate between small-signal and power
models
Can be directly driven by output of 5-V IC
Low ON resistance
R
DS(on)
= 0.45
MAX. @V
GS
= 4 V, I
D
= 1.0 A
R
DS(on)
= 0.35
MAX. @V
GS
= 10 V, I
D
= 1.0 A
Document No. D11227EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
V
DSS
V
GS
= 0
100
V
Gate to Source Voltage
V
GSS
V
DS
= 0
20
V
Drain Current (DC)
I
D(DC)
1.5
A
Drain Current (Pulse)
I
D(pulse)
PW
10 ms,
3.0
A
Duty cycle
50 %
Total Power Dissipation
P
T
1.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
2SK2070
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-Off Current
I
DSS
V
DS
= 100 V, V
GS
= 0
1.0
A
Gate Leakage Current
I
GSS
V
GS
=
20 V, V
DS
= 0
10
A
Gate Cut-Off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
0.8
1.2
2.0
V
Forward Transfer Admittance
|y
fs
|
V
DS
= 10 V, I
D
= 1.0 A
2.0
S
Drain to Source On-State Resistance
R
DS(on)1
V
GS
= 4 V, I
D
= 1.0 A
0.28
0.45
Drain to Source On-State Resistance
R
DS(on)2
V
GS
= 10 V, I
D
= 1.0 A
0.24
0.35
Input Capacitance
C
iss
V
DS
= 10 V, V
GS
= 0,
530
pF
Output Capacitance
C
oss
f = 1.0 MHz
150
pF
Reverse Transfer Capacitance
C
rss
30
pF
Turn-On Delay Time
t
d(on)
V
DD
= 10 V, I
D
= 1.0 A
5
ns
Rise Time
t
r
V
GS(on)
= 10 V, R
G
= 10
50
ns
Turn-Off Delay Time
t
d(off)
R
L
= 10
90
ns
Fall Time
t
f
15
ns
2SK2070
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
0
30
60
90
120
150
T
A
- Ambient Temperature - C
20
40
60
80
100
dT - Derating Factor - %
FORWARD BIAS SAFE OPERATING AREA
0.5
1
5
10
50
100
V
DS
- Drain to Source Voltage - V
0.5
1
2
5
10
I
D
- Drain Current - A
0.2
0.1
2
20
DC
1 ms
PW = 100 ms
10 ms
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0
0.2
0.4
0.6
0.8
1.0
V
DS
- Drain to Source Voltage - V
0.4
0.8
1.2
1.6
2.0
I
D
- Drain Current - A
10 V8 V4 V
3 V
V
GS
= 2 V
TRANSFER CHARACTERISTICS
0
0.5
1
1.5
2
2.5
V
GS
- Gate to Source Voltage - V
0.01
0.1
1
10
I
D
- Drain Current - A
0.001
V
DS
= 10 V
T
A
= 75 C
25 C
25 C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
0.001
0.003
0.01
0.1
0.3
1
I
D
- Drain Current - A
0.01
0.1
1
10
|y
fs
| - Forward Transfer Admittance - S
0.03
V
DS
= 10 V
T
A
= 25 C
25 C
75 C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.01
0.03
1
0.3
3
10
I
D
- Drain Current - A
0.2
0.4
0.5
0.7
R
DS(on)
- Drain to Source On-State Resistance -
0
0.1
0.1
0.3
0.6
V
GS
= 4 V
T
A
= 75 C
25 C
25 C
2SK2070
4
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.01
0.03
1
0.3
3
10
I
D
- Drain Current - A
0.2
0.4
0.5
0.7
R
DS(on)
- Drain to Source On-State Resistance -
0
0.1
0.1
0.3
0.6
V
GS
= 10 V
T
A
= 75 C
25 C
25 C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
5
10
15
20
V
GS
- Gate to Source Voltage - V
0.2
0.4
0.5
R
DS(on)
- Drain to Source On-State Resistance -
0
0.1
0.3
I
D
= 2 A
1 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
0.8
1
1.2
V
SD
- Source to Drain Voltage - V
0.001
0.01
1
10
I
SD
- Diode Forward Current - A
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
1
2
20
10
50
100
V
DS
- Drain to Source Voltage - V
100
200
1000
C
iss
, C
rss
, C
oss
- Capacitance - pF
10
5
20
50
500
0.1
0.6
0.4
0.2
V
GS
= 0
f = 1 MHz
C
rss
C
iss
SWITCHING CHARACTERISTICS
0.1
0.2
2
1
5
10
I
D
- Drain Current - A
10
20
100
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
1
0.5
2
5
50
t
d(off)
C
oss
t
d(on)
t
f
t
f
2SK2070
5
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
TEI-1202
Quality grade on NEC semiconductor devices
IEI-1209
Semiconductor device mounting technology manual
C10535E
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
X10679E
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