Document Outline
- COVER
- FEATURES
- PACKAGE DIMENSIONS
- EQUIVALENT CIRCUIT
- ABSOLUTE MAXIMUM RATINGS (TA = 25 degree)
- ELECTRICAL CHARACTERISTICS (TA = 25 degree)
- TYPICAL CHARACTERISTICS (TA = 25 degree)
- REFERENCE
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2157
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
PACKAGE DIMENSIONS (in mm)
5.7 0.1
2.0 0.2
S
G
1.5 0.1
0.41 0.05
4.2
0.85 0.1
2.1
0.5 0.1
1.0
0.5 0.1
3.65 0.1
5.4 0.25
D
0.55
EQUIVALENT CIRCUIT
Source (S)
Internal diode
Gate
protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Marking: NA4
The 2SK2157 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V. This product has a low ON resistance and
superb switching characteristics and is ideal for driving the actua-
tors and DC/DC converters.
FEATURES
New package intermediate between small-signal and power
models
Can be directly driven by output of 5-V IC
Low ON resistance
R
DS(on)
0.15
@V
GS
= 4 V, I
D
= 2.5 A
R
DS(on)
0.10
@V
GS
= 10 V, I
D
= 2.5 A
Document No. D11233EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
V
DSS
V
GS
= 0
30
V
Gate to Source Voltage
V
GSS
V
DS
= 0
20
V
Drain Current (DC)
I
D(DC)
5.0
A
Drain Current (Pulse)
I
D(pulse)
PW
10 ms,
10.0
A
Duty cycle
50 %
Total Power Dissipation
P
T
7.5 cm
2
0.7 mm, ceramic substrate used
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
2SK2157
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-Off Current
I
DSS
V
DS
= 30 V, V
GS
= 0
1.0
A
Gate Leakage Current
I
GSS
V
GS
=
20 V, V
DS
= 0
10
A
Gate Cut-Off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
1.9
2.5
V
Forward Transfer Admittance
|y
fs
|
V
DS
= 10 V, I
D
= 2.5 A
2.0
S
Drain to Source On-State Resistance
R
DS(on)1
V
GS
= 4 V, I
D
=2.5 A
0.09
0.15
Drain to Source On-State Resistance
R
DS(on)2
V
GS
= 10 V, I
D
= 2.5 A
0.06
0.10
Input Capacitance
C
iss
V
DS
= 10 V, V
GS
= 0,
650
pF
Output Capacitance
C
oss
f = 1.0 MHz
400
pF
Reverse Transfer Capacitance
C
rss
120
pF
Turn-On Delay Time
t
d(on)
V
DD
= 10 V, I
D
= 2.5 A
85
ns
Rise Time
t
r
V
GS(on)
= 10 V, R
G
= 10
450
ns
Turn-Off Delay Time
t
d(off)
R
L
= 4
285
ns
Fall Time
t
f
315
ns
2SK2157
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
30
60
90
120
150
T
A
- Ambient Temperature - C
dT - Derating Factor - %
FORWARD BIAS SAFE OPERATING AREA
10
2
1
0.5
0.2
0.1
2
5
10
50
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
5
1
20
Single Pulse
10 ms
PW = 100 ms
DS
1 ms
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
10
8
6
4
2
0
1
2
3
4
5
V
DS
- Drain to Source Voltate -V
I
D
- Drain Current - A
3.5 V
3.0 V
2.5 V
V
GS
= 2.0 V
4.0 V
10 V 4.5 V
TRANSFER CHARACTERISTICS
10
1
0.1
0.01
0.5
1
1.5
2.5
3
4
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
0.001
2
3.5
25 C
25 C
V
DS
= 10 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
1
0.1
0.01
0.01
0.1
1
I
D
- Drain Current - A
|y
fs
| - Forward Transfer Admittance - S
V
DS
= 10 V
0.001
T
A
= 25 C
25 C
75 C
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
0.3
0.2
0.1
0.01
0.1
1
10
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance -
0
V
GS
= 4 V
0.001
T
A
= 75 C
25 C
25 C
T
A
= 75 C
2SK2157
4
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
0.2
0.1
0
0.01
0.1
1
10
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance -
0.001
T
A
= 75 C
25 C
V
GS
= 4.0 V
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
0.15
0.1
8
12
16
20
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-State Resistance -
0
0.05
4
I
D
= 5 A
2.5 A
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
1 000
200
5
20
50
100
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
1
50
2
500
100
20
10
C
oss
C
rss
C
iss
10
V
GS
= 0
f = 1 MHz
SWITCHING CHARACTERISTICS
1 000
200
0.5
2
5
10
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
0.1
50
0.2
500
100
20
10
t
d(off)
1
V
DD
= 10 V
V
GS(on)
= 10 V
t
f
t
r
t
d(on)
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
10
1
0.4
0.8
1
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
0.2
0.1
0.001
0.6
0.01
25 C
2SK2157
5
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
TEI-1202
Quality grade on NEC semiconductor devices
IEI-1209
Semiconductor device mounting technology manual
C10535E
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
X10679E
2SK2157
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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
[MEMO]
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