Document Outline
- COVER
- FEATURES
- PACKAGE DIMENSIONS
- EQUIVALENT CIRCUIT
- ABSOLUTE MAXIMUM RATINGS (TA = 25 degree)
- ELECTRICAL CHARACTERISTICS (TA = 25 degree)
- TYPICAL CHARACTERISTICS (TA = 25 degree)
- REFERENCE
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2158
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
Document No. D11234EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
The 2SK2158 is an N-channel vertical type MOS FET featur-
ing an operating voltage as low as 1.5 V. Because it can be
driven on a low voltage and it is not necessary to consider
driving current, the 2SK2158 is suitable for use in low-voltage
portable systems such as headphone stereo sets and camcorders.
FEATURES
Capable of drive gate with 1.5 V
Because of high input impedance, there is no need to
consider driving current.
Bias resistance can be omitted, enabling reduction in total
number of parts.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATINGS
UNIT
Drain to Source Voltage
V
DSS
V
GS
= 0
50
V
Gate to Source Voltage
V
GSS
V
DS
= 0
7.0
V
Drain Current (DC)
I
D(DC)
0.1
A
Drain Current (pulse)
I
D(pulse)
PW
10 ms,
0.2
A
Duty Cycle
50 %
Total Power Dissipation
P
T
200
mW
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
2.8
0.2
1.5
3
2
0.95
1
Marking
Marking: G23
3
1
2
Gate protection
diode
Internal
diode
EQUIVALENT CIRCUIT
0.65
+0.1
0.15
0.4
+0.1
0.05
0.4
+0.1
0.05
0.16
+0.1
0.06
0 to 0.1
2.9
0.2
0.95
0.3
1.1 to 1.4
PIN CONNECTION
1. Source (S)
2. Gate (G)
3. Drain (D)
PACKAGE DIMENSIONS
(in millimeters)
2SK2158
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-off Current
I
DSS
V
DS
= 50 V, V
GS
= 0
1.0
A
Gate Leakage Current
I
GSS
V
GS
=
7.0 V, V
DS
= 0
3.0
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 3 V, I
D
= 1.0
A
0.5
0.7
1.1
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 3 V, I
D
= 10 mA
20
mS
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 1.5 V, I
D
= 1.0 mA
32
50
Drain to Source On-state Resistance
R
DS(on)2
V
GS
= 2.5 V, I
D
= 10 mA
16
20
Drain to Source On-state Resistance
R
DS(on)3
V
GS
= 4.0 V, I
D
= 10 mA
12
15
Input Capacitance
C
iss
V
DS
= 3 V, V
GS
= 0
6
pF
Output Capacitance
C
oss
f = 1.0 MHz
8
pF
Reverse Transfer Capacitance
C
rss
1
pF
Turn-On Delay Time
t
d(on)
V
DD
= 3 V, I
D
= 20 mA
9
ns
Rise Time
t
r
V
GS(on)
= 3 V, R
G
= 10
48
ns
Turn-Off Delay Time
t
d(off)
R
L
= 150
21
ns
Fall Time
t
f
31
ns
2SK2158
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
T
A
- Ambient Temperature - C
dT - Derating Factor - %
100
80
60
40
20
0
30
60
90
120
150
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - mA
200
160
120
80
40
0
1
2
3
4
5
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
7 V
3.5 V
3.0 V
2.5 V
2.0 V
1.5 V
V
GS
= 1.0 V
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - mA
100
10
1
0.1
0.01
0.001
0
1
2
TRANSFER CHARACTERISITICS
I
D
- Drain Current - mA
|y
fs
| - Forward Transfer Admittance - S
1 000
100
10
1
0.1
1
10
100
1 000
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
DS
= 3 V
T
A
= 75 C
25 C
25 C
T
A
= 25 C
25 C
75 C
I
D
- Drain Current - mA
R
DS(on)
- Drain to Source On-state Resistance -
70
60
50
40
30
20
10
0
0.1
1
10
100
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
V
GS
= 1.5 V
V
GS
= 1.5 V
T
A
= 75 C
25 C
25 C
I
D
- Drain Current - mA
R
DS(on)
- Drain to Source On-state Resistance -
70
60
50
40
30
20
10
0
1
10
100
1 000
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
V
GS
= 2.5 V
T
A
= 75 C
25 C
25 C
V
DS
= 3 V
2SK2158
4
I
D
- Drain Current - mA
R
DS(on)
- Drain to Source On-state Resistance -
70
60
50
40
30
20
10
0
1
10
100
1 000
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
V
GS
= 4.0 V
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance -
50
40
30
20
10
0
2
4
6
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
I
D
= 10 mA
I
D
= 100 mA
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
10
5
2
1
0.5
0.2
0.1
1
2
5
10
20
50
100
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
C
iss
C
oss
I
D
- Drain Current - mA
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
100
50
20
10
5
2
1
10
20
50
100
200
500
1 000
SWITCHING CHARACTERISTICS
V
GS
= 0
f = 1 MHz
C
rss
V
SD
- Source to Drain Voltage - V
I
SD
- Source to Drain Current - A
1
0.1
0.01
0.001
0.4
0.8
1.2
1.6
2
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
t
r
t
f
t
d(on)
t
d(off)
V
DD
= 3 V
V
GS(on)
= 3 V
R
G
= 10
V
GS
= 4.0 V
T
A
= 75 C
25 C
25 C
2SK2158
5
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
TEI-1202
Quality grade on NEC semiconductor devices
IEI-1209
Semiconductor device mounting technology manual
C10535E
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
X10679E
2SK2158
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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