Document Outline
- COVER
- DESCRIPTION
- FEATURES
- QUALITY GRADE
- ABSOLUTE MAXIMUM RATINGS (TA = 25 degree)
- PACKAGE DIMENSIONS
- ELECTRICAL CHARACTERISTICS (TA = 25 degree)
- TYPICAL CHARACTERISTICS (TA = 25 degree)
- REFERENCE
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transis-
tor designed for high voltage switching applications.
FEATURES
Low On-Resistance
2SK2353: R
DS(on)
= 1.4
(V
GS
= 10 V, I
D
= 2.5 A)
2SK2354: R
DS(on)
= 1.5
(V
GS
= 10 V, I
D
= 2.5 A)
Low C
iss
C
iss
= 670 pF TYP.
High Avalanche Capability Ratings
Isolate TO-220 Package
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage (2SK2353/2354)
V
DSS
450/500
V
Gate to Source Voltage
V
GSS
30
V
Drain Current (DC)
I
D(DC)
4.5
A
Drain Current (pulse)*
I
D(pulse)
18
A
Total Power Dissipation (T
c
= 25 C)
P
T1
30
W
Total Power Dissipation (T
a
= 25 C)
P
T2
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150 C
Single Avalanche Current**
I
AS
4.5
A
Single Avalanche Energy**
E
AS
17.4
mJ
*
PW
10
s, Duty Cycle
1 %
** Starting T
ch
= 25 C, R
G
= 25
, V
GS
= 20 V
0
2SK2353/2SK2354
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
The information in this document is subject to change without notice.
1994
DATA SHEET
Document No. TC-2499
(O. D. No. TC-8047)
Date Published November 1994 P
Printed in Japan
10.0 0.3.
0.7 0.1
2.7 0.2
4.5 0.2
15.0 0.3
3.2 0.2
2.5 0.1
0.65 0.1
1.3 0.2
1.5 0.2
2.54
2.54
3 0.1
12.0 0.2
13.5 MIN.
4 0.2
1. Gate
2. Drain
3. Source
Drain
Body
Diode
Gate
Source
1
2
3
PACKAGE DIMENSIONS
(in millimeters)
MP-45F (ISOLATED TO-220)
2SK2353/2SK2354
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-Resistance
R
DS(on)
1.0
1.4
V
GS
= 10 V
2SK2353
1.1
1.5
I
D
= 2.5 A
2SK2354
Gate to Source Cutoff Voltage
V
GS(off)
2.5
3.5
V
DS
= 10 V, I
D
= 1 mA
Forward Transfer Admittance
| y
fs
|
1.0
V
DS
= 10 V, I
D
= 2.5 A
Drain Leakage Current
I
DSS
100
V
DS
= V
DSS
, V
GS
= 0
Gate to Source Leakage Current
I
GSS
100
V
GS
=
30 V, V
DS
= 0
Input Capacitance
C
iss
670
V
DS
= 10 V
Output Capacitance
C
oss
140
V
GS
= 0
Reverse Transfer Capacitance
C
rss
18
f = 1 MHz
Turn-On Delay Time
t
d(on)
11
I
D
= 2.5 A
Rise Time
t
r
8
V
GS(on)
= 10 V
Turn-Off Delay Time
t
d(off)
40
V
DD
= 150 V
Fall Time
t
f
8
R
G
= 10
R
L
= 60
Total Gate Charge
Q
G
20
I
D
= 4.5 A
Gate to Source Charge
Q
GS
4.5
V
DD
= 400 V
Gate to Drain Charge
Q
GD
9
V
GS
= 10 V
Body Diode Forward Voltage
V
F(S-D)
1.0
I
F
= 4.5 A, V
GS
= 0
Reverse Recovery Time
t
rr
270
I
F
= 4.5 A, V
GS
= 0
Reverse Recovery Charge
Q
rr
1.0
di/dt = 50 A/
s
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
V
DD
L
R
G
= 25
50
PG
V
GS
= 20 - 0 V
R
G
R
G
= 10
D.U.T.
R
L
V
DD
PG.
0
t
V
GS
t = 1 s
Duty Cycle
1 %
V
GS
Wave
Form
I
D
Wave
Form
I
D
0
0
10 %
10 %
90 %
90 %
10 %
90 %
I
D
V
GS (on)
t
d (off)
t
d (on)
t
on
t
off
t
f
t
r
V
GS
V
DD
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
D.U.T.
Test Circuit 3 Gate Charge
D.U.T.
R
L
V
DD
50
I
G
= 2 mA
PG.
UNIT
V
S
A
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2SK2353/2SK2354
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
40
60
100
120
140
160
20
40
60
80
100
T
c
- Case Temperature - C
dT - Percentage of Rated Power - %
0
20
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
20
40
60
80
100
120
140
160
T
c
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0
4
8
12
16
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
10
8
6
2
FORWARD BIAS SAFE OPERATING AREA
100
10
0.1
10
100
1000
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
1
1.0
Power Dissipation Limited
10 ms
R
DS (on)
Limited
(at V
GS
= 10 V)
I
D (DC)
I
D (pulse)
100 s
T
c
= 25 C
Single Pulse
PW = 10 s
Pulsed
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
0
V
GS
- Gate to Source Voltage - V
T
a
= 25 C
25 C
75 C
Pulsed
10
50
0.05
0.1
I
D
- Drain Current - A
50
40
30
20
10
2SK2353
2SK2354
V
GS
= 20 V
125 C
1
5
10
15
80
100 ms
1ms
4
10 V
8 V
V
GS
= 6 V
2SK2353/2SK2354
4
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000
100
10
1
0.1
10
100
1 m
10 m
100 m
1
10
100
1 000
PW - Pulse Width - s
r
th(ch-c) (t)
- Transient Thermal Resistance - C/W
R
DS(on)
- Drain to Source On-State Resistance -
3.0
2.0
0
DRAIN TO SOURCE ON-STATE
RESITANCE vs. DRAIN CURRENT
0.1
10
I
D
- Drain Current - A
1
V
GS(off)
- Gate to Source Cutoff Voltage - V
1.0
0
50
0
50
100
150
T
ch
- Channel Temperature - C
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
Pulsed
T
c
= 25 C
Single Pulse
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
10
1.0
10
IyfsI - Forward Transfer Admittance - S
I
D
- Drain Current - A
0.1
DRAIM TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
20
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-State Resistance -
Pulsed
30
0
I
D
= 2.5 A
30
20
10
100
1.0
2.0
3.0
4.0
V
DS
= 10 V
I
D
= 1 mA
1.0
T
a
= 25 C
25 C
75 C
125 C
V
DS
= 10 V
Pulsed
0.01
R
th(ch-c)
= 4.17 C/W
R
th(ch-c)
= 62.5 C/W
I
D
= 5 A
I
D
= 1 A
2SK2353/2SK2354
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
4.0
3.0
2.0
1.0
0
50
0
50
100
150
V
GS
= 10 V
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-State Resistance -
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
10
1.0
0.5
0.1
1.5
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
SWITCHING CHARACTERISTICS
500
100
10
1.0
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
0.1
100
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
500
0
0.1
10
100
t
rr
- Reverse Recovery Diode - ns
I
D
- Drain Current - A
0
5
10
15
20
400
300
200
100
V
DS
V
GS
I
D
= 4.5 A
V
DS
- Drain to Source Voltage - V
Q
g
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
16
14
12
10
8
6
4
2
Pulsed
di/dt = 50 A/ns
V
GS
= 0
V
DD
= 100 V
V
GS
= 10 V
R
G
= 25
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1 000
100
5
1
100
1000
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0
f = 1.0 MHz
t
f
t
d(off)
t
d(on)
I
D
= 2 A
1.0
0
0.05
50
10
5 000
C
iss
C
rss
V
DD
= 400 V
250 V
125 V
1.0
200
100
1.0
10
0.5
I
D
= 4 A
10 V
V
GS
= 0
10
400
300
C
oss
t
r
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