1994
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel
MOS Field Effect Transistor designed for high voltage switching
applications.
FEATURES
Low On-Resistance
2SK2355: R
DS(on)
= 1.4
(V
GS
= 10 V, I
D
= 2.5 A)
2SK2356: R
DS(on)
= 1.5
(V
GS
= 10 V, I
D
= 2.5 A)
Low C
iss
C
iss
= 670 pF TYP.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage (2SK2355/2356)
V
DSS
450/500
V
Gate to Source Voltage
V
GSS
30
V
Drain Current (DC)
I
D(DC)
5.0
A
Drain Current (pulse)*
I
D(pulse)
20
A
Total Power Dissipation (T
c
= 25 C)
P
T1
50
W
Total Power Dissipation (T
a
= 25 C)
P
T2
1.5
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current**
I
AS
5.0
A
Single Avalanche Energy**
E
AS
17.4
mJ
*
PW
10
s, Duty Cycle
1 %
** Starting T
ch
= 25 C, R
G
= 25
, V
GS
= 20 V
0
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
The information in this document is subject to change without notice.
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z
Document No. D11391EJ3V0DS00 (3rd edition)
(Previous No. TC-2500)
Date Published March 1998 N CP(K)
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
10.6 MAX.
10.0
3.0 0.3
3.6 0.2
5.9 MIN.
15.5 MAX.
6.0 MAX.
12.7 MIN.
1.3 0.2
0.75 0.1
2.54
2.54
4.8 MAX.
1.3 0.2
0.5 0.2
2.8 0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
(10.0)
4.8 MAX.
MP-25 (TO-220)
1.3 0.2
0.5 0.2
(0.5R)
(0.8R)
4
1 2 3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1 2 3
(2.54) (2.54)
1.4 0.2
8.5 0.2
1.1 0.2
3.0 0.5
2.8 0.2
1.5 MAX.
1.0 0.5
4
Drain
Body
Diode
Gate
Source
MP-25Z (TO-220 SURFACE MOUNT TYPE)
1.0 0.3
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-Resistance
R
DS(on)
0.9
1.4
V
GS
= 10 V
2SK2355
1.0
1.5
I
D
= 2.5 A
2SK2356
Gate to Source Cutoff Voltage
V
GS(off)
2.5
3.5
V
DS
= 10 V, I
D
= 1 mA
Forward Transfer Admittance
| y
fs
|
1.0
V
DS
= 10 V, I
D
= 2.5 A
Drain Leakage Current
I
DSS
100
V
DS
= V
DSS
, V
GS
= 0
Gate to Source Leakage Current
I
GSS
100
V
GS
=
30 V, V
DS
= 0
Input Capacitance
C
iss
670
V
DS
= 10 V
Output Capacitance
C
oss
140
V
GS
= 0
Reverse Transfer Capacitance
C
rss
18
f = 1 MHz
Turn-On Delay Time
t
d(on)
11
I
D
= 2.5 A
Rise Time
t
r
8
V
GS
= 10 V
Turn-Off Delay Time
t
d(off)
40
V
DD
= 150 V
Fall Time
t
f
8
R
G
= 10
R
L
= 60
Total Gate Charge
Q
G
20
I
D
= 5.0 A
Gate to Source Charge
Q
GS
4.5
V
DD
= 400 V
Gate to Drain Charge
Q
GD
9
V
GS
= 10 V
Body Diode Forward Voltage
V
F(S-D)
1.0
I
F
= 5.0 A, V
GS
= 0
Reverse Recovery Time
t
rr
270
I
F
= 5.0 A, V
GS
= 0
Reverse Recovery Charge
Q
rr
1.0
di/dt = 50 A/
s
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
UNIT
m
V
S
A
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
V
DD
L
R
G
= 25
50
PG
V
GS
= 20 - 0 V
V
DD
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
D.U.T.
R
G
R
G
= 10
D.U.T.
R
L
V
DD
PG.
0
t
V
GS
t = 1 s
Duty Cycle
1 %
V
GS
Wave
Form
I
D
Wave
Form
I
D
0
0
10 %
10 %
90 %
90 %
10 %
90 %
I
D
V
GS (on)
t
d (off)
t
d (on)
t
on
t
off
t
f
t
r
V
GS
D.U.T.
R
L
V
DD
50
I
G
= 2 mA
PG.
Test Circuit 3 Gate Charge
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z
3
TYPICAL CHARACTERISTICS (T
A
= 25
C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
40
60
100
120
140
160
20
40
60
80
100
T
c
- Case Temperature - C
dT - Percentage of Rated Power - %
0
20
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
20
40
60
80
100
120
140
160
60
T
c
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0
4
8
12
16
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
10
6
4
2
FORWARD BIAS SAFE OPERATING AREA
100
10
0.1
10
100
1000
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
1
1.0
Power Dissipation Limited
10 ms
R
DS (on)
Limited
(at V
GS
= 10 V)
I
D (DC)
I
D (pulse)
100 s
1 ms
T
C
= 25 C
Single Pulse
PW = 1.0 s
Pulsed
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
0
V
GS
- Gate to Source Voltage - V
T
a
= 25 C
25 C
75 C
Pulsed
10
50
0.05
0.1
I
D
- Drain Current - A
70
50
40
30
20
10
2SK2355
2SK2356
V
GS
= 20 V
10 V
8 V
6 V
1
5
10
15
80
10 s
8
125 C
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z
4
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000
100
10
1
0.1
10
100
1 m
10 m
100 m
1
10
100
1 000
PW - Pulse Width - s
r
th(ch-c) (t)
- Transient Thermal Resistance - C/W
R
DS(on)
- Drain to Source On-State Resistance -
3.0
2.0
0
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
0.1
10
I
D
- Drain Current - A
1
V
GS(off)
- Gate to Source Cutoff Voltage - V
1.0
0
50
0
50
100
150
Tch - Channel Temperature - C
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
Pulsed
T
c
= 25 C
Single Pulse
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
10
1.0
10
IyfsI - Forward Transfer Admittance - S
I
D
- Drain Current - A
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
20
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-State Resistance -
Pulsed
30
0
3.0
2.0
1.0
100
1.0
2.0
3.0
4.0
V
DS
= 10 V
I
D
= 1 mA
1.0
I
D
= 5 A
2.5 A
1 A
V
DS
= 10 V
Pulsed
T
a
= 25 C
25 C
75 C
125 C
R
th(ch-a)
= 83 C/W
R
th(ch-c)
= 2.5 C/W
0.01
0.01
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
4.0
3.0
2.0
1.0
0
50
0
50
100
150
V
GS
= 10 V
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-State Resistance -
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
10
1.0
0.5
0.1
1.5
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
SWITCHING CHARACTERISTICS
500
100
10
1.0
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
0.1
100
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
5 000
50
0.1
10
100
t
rr
- Reverse Recovery time - ns
I
D
- Drain Current - A
0
5
10
15
20
400
300
200
100
V
DS
V
GS
I
D
= 5.0 A
V
DS
- Drain to Source Voltage - V
Q
g
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
16
14
12
10
8
6
4
2
0
Pulsed
di/dt = 50 A/ s
V
GS
= 0
V
DD
= 100 V
V
GS
= 10 V
R
G
= 25
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1 000
100
10
1
100
1000
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0
f = 1.0 MHz
t
f
t
r
t
d(off)
t
d(on)
1.0
0
0.05
50
10
5 000
C
iss
C
rss
V
DD
= 400 V
250 V
125 V
1.0
1 000
100
1.0
10
0.5
10 V
V
GS
= 0
I
D
= 4 A
I
D
= 2 A
C
oss
5
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z
6
SINGLE AVALANCHE CURRENT vs
INDUCTIVE LOAD
100
10
1.0
100
1.0 m
10 m
100 m
L - Inductive Load - H
I
AS
- Single Avalanche Current - A
SINGLE AVALANCHE ENERGY vs
STARTING CHANNEL TEMPERATURE
20
15
10
25
E
AS
- Single Avalanche Energy - mJ
5
50
75
100
125
I
D(peak)
= I
AS
R
G
= 25
V
GS
= 20 V
0 V
V
DD
= 150 V
Starting T
ch
- Starting Channel Temperature - C
I
AS
= 5.0 A
E
AS
= 17.4 mJ
150
175
E
AS
= 17.4 mJ
R
G
= 25
V
DD
= 150 V
V
GS
= 20 V
0
Starting T
ch
= 25C
0
0.1
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z
7
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system.
C11745E
Quality grades on NEC semiconductor devices.
C11531E
Semiconductor device mounting technology manual.
C10535E
Semiconductor device package manual.
C10943X
Guide to quality assurance for semiconductor devices.
MEI-1202
Semiconductor selection guide.
X10679E
Power MOS FET features and application switching to power supply.
D12971E
Application circuits using Power MOS FET.
D12972E
Safe operating area of Power MOS FET.
D13085E
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific:
Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z
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