Document Outline
- COVER
- DESCRIPTION
- FEATURES
- ABSOLUTE MAXIMUM RATINGS (TA = 25 degree)
- PACKAGE DIMENSIONS
- ELECTRICAL CHARACTERISTICS (TA = 25 degree)
- TYPICAL CHARACTERISTICS (TA = 25 degree)
- REFERENCE
MOS FIELD EFFECT TRANSISTORS
DESCRIPTION
The 2SK2361/2SK2362 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
Low On-Resistance
2SK2361: R
DS (on)
= 0.9
(V
GS
= 10 V, I
D
= 5.0 A)
2SK2362: R
DS (on)
= 1.0
(V
GS
= 10 V, I
D
= 5.0 A)
Low C
iss
C
iss
= 1050 pF TYP.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage (2SK2361/2SK2362)
V
DSS
450/500
V
Gate to Source Voltage
V
GSS
30
V
Drain Current (DC)
I
D (DC)
10
A
Drain Current (pulse)*
I
D (pulse)
40
A
Total Power Dissipation (T
c
= 25 C)
P
T1
100
W
Total Power Dissipation (T
A
= 25 C)
P
T2
3.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150 C
Single Avalanche Current**
I
AS
10
A
Single Avalanche Energy**
E
AS
142
mJ
*
PW
10
s, Duty Cycle
1 %
** Starting T
ch
= 25 C, R
G
= 25
, V
GS
= 20 V
0
2SK2361/2SK2362
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. TC-2502
(O. D. No. TC-8061)
Date Published December 1994 P
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
1.00.2
1
2
3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
4
15.7 MAX.
3.20.2
2.80.1
0.60.1
2.20.2
5.45
5.45
4.7 MAX.
1.5
1.0
6.0
7.0
19 MIN.
20.00.2
3.00.2
4.50.2
Body
Diode
Source
Drain
Gate
1995
DATA SHEET
2SK2361/2SK2362
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-Resistance
R
DS (on)
0.7
0.9
V
GS
= 10 V
2SK2361
0.8
1.0
I
D
= 5.0 A
2SK2362
Gate to Source Cutoff Voltage
V
GS (off)
2.5
3.5
V
DS
= 10 V, I
D
= 1 mA
Forward Transfer Admittance
| y
fs
|
3.0
V
DS
= 10 V, I
D
= 5.0 A
Drain Leakage Current
I
DSS
100
V
DS
= V
DSS
, V
GS
= 0
Gate to Source Leakage Current
I
GSS
100
V
GS
=
30 V, V
DS
= 0
Input Capacitance
C
iss
1050
V
DS
= 10 V
Output Capacitance
C
oss
200
V
GS
= 0
Reverse Transfer Capacitance
C
rss
26
f = 1 MHz
Turn-On Delay Time
t
d (on)
15
I
D
= 5.0 A
Rise Time
t
r
24
V
GS
= 10 V
Turn-Off Delay Time
t
d (off)
50
V
DD
= 150 V
Fall Time
t
f
14
R
G
= 10
R
L
= 30
Total Gate Charge
Q
G
26
I
D
= 10 A
Gate to Source Charge
Q
GS
6.1
V
DD
= 400 V
Gate to Drain Charge
Q
GD
12
V
GS
= 10 V
Body Diode Forward Voltage
V
F (S-D)
1.0
I
F
= 10 A, V
GS
= 0
Reverse Recovery Time
t
rr
350
I
F
= 10 A, V
GS
= 0
Reverse Recovery Charge
Q
rr
2.0
di/dt = 50 A/
s
UNIT
V
S
A
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
C
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
Test Circuit 3 Gate Charge
V
GS
= 20 - 0 V
PG
R
G
= 25
50
D.U.T.
L
V
DD
Test Circuit 1 Avalanche Capability
PG.
R
G
= 10
D.U.T.
R
L
V
DD
Test Circuit 2 Switching Time
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
t = 1 us
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
I
D
10 %
10 %
0
0
90 %
90 %
90 %
10 %
V
GS (on)
I
D
t
on
t
off
t
d (on)
t
r
t
d (off)
t
f
t
2SK2361/2SK2362
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
20
140
160
100
T
C
- Case Temperature - C
dT - Percentage of Rated Power - %
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
FORWARD BIAS SAFE OPERATING AREA
10
100
1 000
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
4
16
8
12
20
80
0
40
1.0
10
0.1
60
20
60
40
80
100
120
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
20
140
160
100
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
80
0
40
60
20
60
40
80
100
120
120
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
5
10
15
100
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
1
10
0.1
16
12
8
4
0
Pulsed
V
GS
= 20 V
10 V
8 V
6 V
1
T
C
= 25 C
Single Pulse
100 s
1 ms
10 ms
Power Dissipation Limited
R
DS (on)
Limited
(at V
GS
= 10 V)
0
Pulsed
T
A
= 25 C
25 C
75 C
125 C
I
D (pulse)
PW = 10 s
I
D (DC)
2SK2362
2SK2361
2SK2361/2SK2362
4
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th (ch-c) (t)
- Transient Thermal Resistance - C/W
1 000
100
10
1
0.1
0.01
0.001
10 u
100 u
1 m
10 m
100 m
1
10
100
1 000
T
C
= 25 C
Single Pulse
R
th (ch-a)
= 41.7 C/W
R
th (ch-c)
= 1.25 C/W
V
DS
= 10 V
Pulsed
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1.0
10
100
100
I
D
- Drain Current - A
| yfs | - Forward Transfer Admittance - S
T
A
= 25 C
25 C
75 C
125 C
10
20
30
1.5
V
GS
- Gate to Source Voltage - V
R
DS (on)
- Drain to Source On-State Resistance -
GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS (off)
- Gate to Source Cutoff Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1.0
10
100
3.0
I
D
- Drain Current - A
R
DS (on)
- Drain to Source On-State Resistance -
Pulsed
I
D
= 6 A
3 A
1.5 A
50
0
50
100
150
4.0
3.0
2.0
1.0
0
10
0.1
1.0
1.0
0.5
0
1.0
2.0
0
Pulsed
V
DS
= 10 V
I
D
= 1 mA
2SK2361/2SK2362
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Q
g
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
10
20
30
40
400
300
200
100
T
ch
- Channel Temperature -C
R
DS (on)
- Drain to Source On-State Resistance -
50
0
50
100
150
1.6
1.2
0.8
0.4
0
V
GS
= 10 V
I
D
= 6 A
3 A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1.0
10
100
I
D
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
1 000
0.1
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
16
14
12
10
8
6
4
2
I
D
= 10 A
V
DD
= 400 V
250 V
125 V
V
GS
V
DS
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
1.5
100
10
1.0
0.1
1.0
0.5
0
Pulsed
10 V
V
GS
= 0
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10
100
1 000
10 000
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
1 000
100
10
1
V
GS
= 0
f = 1 MHz
C
iss
C
oss
C
rss
1.0
10
100
1 000
I
D
- Drain Current - A
t
d (on)
, t
r
, t
d (off)
, t
f
- Switching Time - ns
100
0.1
10
1.0
V
DS
= 150 V
V
GS
= 10 V
R
G
= 10
SWITCHING CHARACTERISTICS
t
r
t
f
t
d(on)
t
d(off)
di/dt = 50 A/us
V
GS
= 0
2SK2361/2SK2362
6
1.0 m
10 m
100 m
100
L - Inductive load - H
I
AS
- Single Avalanche Current - A
10
1.0
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100
R
G
= 25
V
DD
= 150 V
V
GS
= 20 V
0
Starting T
ch
= 25 K
I
AS
= 10 A
Starting Tch-Starting Channel Temperature - C
E
AS
- Single Avalanche Energy - mJ
25
50
75
125
150
100
175
SINGLE AVALANCHE ENERGY vs.
STARTING CHANNEL TEMPERATURE
150
100
50
I
D (peak)
= I
AS
R
G
= 25
V
GS
= 20 V
0 V
V
DD
= 150 V
142 mJ
E
AS
= 142 mJ
0.1
2SK2361/2SK2362
7
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system.
TEI-1202
Quality grade on NEC semiconductor devices.
IEI-1209
Semiconductor device mounting technology manual.
IEI-1207
Semiconductor device package manual.
IEI-1213
Guide to quality assurance for semiconductor devices.
MEI-1202
Semiconductor selection guide.
MF-1134
Power MOS FET features and application switching power supply.
TEA-1034
Application circuits using Power MOS FET.
TEA-1035
Safe operating area of Power MOS FET.
TEA-1037
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
2SK2361/2SK2362
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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