Document Outline
- COVER
- DESCRIPTION
- FEATURES
- ABSOLUTE MAXIMUM RATINGS (TA = 25 degree)
- PACKAGE DIMENSIONS
- ELECTRICAL CHARACTERISTICS (TA = 25 degree)
- TYPICAL CHARACTERISTICS (TA = 25 degree)
- REFERENCE
MOS FIELD EFFECT TRANSISTORS
2SK2371/2SK2372
DESCRIPTION
The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
Low On-Resistance
2SK2367: R
DS(ON)
= 0.25
(V
GS
= 13 V, I
D
= 10 A)
2SK2368: R
DS(ON)
= 0.27
(V
GS
= 13 V, I
D
= 10 A)
Low C
iss
C
iss
= 3600 pF TYP.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Drain to Source Voltage (2SK2371/2SK2372) V
DSS
450/500
V
Gate to Source Voltage
V
GSS
30
V
Drain Current (DC)
I
D(DC)
25
A
Drain Current (pulse)*
I
D(pulse)
100
A
Total Power Dissipation (T
C
= 25
C)
P
T1
160
W
Total Power Dissipation (T
a
= 25
C)
P
T2
3.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 ~ +150
C
Single Avalanche Current**
I
AS
25
A
Single Avalanche Energy**
E
AS
446
mJ
* PW
10
s, Duty Cycle
1 %
** Starting T
ch
= 25
C, R
G
= 25
, V
GS
= 20 V
0
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device is actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
1995
DATA SHEET
Document No.
TC-2505
(O.D. No.
TC-8064
Date Published
January 1995 P
Printed in Japan
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Body
Diode
Source
Drain
Gate
3
3.2 0.2
4.7 MAX.
1.5
7.0
2.8 0.1
0.6 0.1
1.0 0.2
2.2 0.2
5.45
5.45
15.7 MAX.
4
1
2
4.5 0.2
20.0 0.2
3.0 0.2
6.0
1.0
19 MIN.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
PACKAGE DIMENSIONS
(in millimeters)
2SK2371/2SK2372
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITION
Drain to Source On-Resistance
R
DS(on)
0.2
0.25
V
GS
= 10 V
2SK2371
0.22
0.27
I
D
= 13 A
2SK2372
Gate to Source Cutoff Voltage
V
GS(off)
2.5
3.5
V
V
DS
= 10 V, I
D
= 1 mA
Forward Transfer Admittance
y
fs
8.0
S
V
DS
= 10 V, I
D
= 13 A
Drain Leakage Current
I
DSS
100
A
V
DS
= V
DSS
, V
GS
= 0
Gate to Source Leakage Current
I
GSS
100
nA
V
GS
=
30 V, V
DS
= 0
Input Capacitance
C
iss
3600
pF
V
DS
= 10 V
Output Capacitance
C
oss
700
pF
V
GS
= 0
Reverse Transfer Capacitance
C
rss
50
pF
f = 1 MHz
Turn-On Delay Time
t
d(on)
40
ns
I
D
= 13 A
Rise Time
t
r
70
ns
V
GS
= 10 V
Turn-Off Delay Time
t
d(off)
160
ns
V
DD
= 150 V
Fall Time
t
f
60
ns
R
G
= 10
RL = 11.5
Total Gate Charge
Q
G
95
nC
I
D
= 25 A
Gate to Source Charge
Q
GS
20
nC
V
DD
= 400 V
Gate to Drain Charge
Q
GD
40
nC
V
GS
= 10 V
Body Diode Forward Voltage
V
F(S-D)
1.0
V
I
F
= 25 A, V
GS
= 0
Reverse Recovery Time
t
rr
500
ns
I
F
= 25 A, V
GS
= 0
Reverse Recovery Charge
Q
rr
4.5
C
di/dt
= 50 A/
S
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
V
GS
= 20-0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
PG.
R
G
= 10
D.U.T.
R
L
V
DD
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
t = 1
US
Duty Cycle
1%
V
GS
Wave
Form
I
D
Wave
Form
V
GS
I
D
10 %
10 %
0
0
90 %
90 %
90 %
10 %
V
GS (on)
I
D
t
on
t
off
t
d (on)
t
r
t
d (off)
t
f
t
Test Circuit 3 Gate Charge
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2SK2371/2SK2372
3
TYPICAL CHARACTERISTICS (T
A
= 25
C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
20
140
160
T
C
- Case Temperature - (C)
dT - Percentage of Rated Power - %
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - (V)
I
D
- Drain Current - (A)
FORWARD BIAS SAFE OPERATING AREA
10
100
1 000
V
DS
- Drain to Source Voltage - (V)
I
D
- Drain Current - (A)
0
60
40
80
100
120
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
20
140
160
150
T
C
- Case Temperature - (C)
P
T
- Total Power Dissipation - (W)
120
0
60
90
30
60
40
80
100
120
180
210
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - (V)
I
D
- Drain Current - (A)
1
1 000
10
100
0.1
1.0
Pulsed
5
15
10
20
15
10
5
0
8 V
6 V
5 V
V
GS
= 10 V
5
10
15
100
1
10
0.1
0
V
DS
= 10 V
Pulsed
T
ch
= 125 C
75 C
25 C
25 C
100
80
60
40
20
I
D (pulse)
T
A
= 25 C
Single Pulse
PW = 10 s
100
s
R
DS (on)
Limited
( V
GS
= 10 V)
Power Dissipation Limitd
10 ms
1 ms
2SK2371
2SK2372
I
D (DC)
I
D (DC)
2SK2371/2SK2372
4
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - (s)
r
th (t)
- Transient Thermal Resistance - (C/W)
10
100
1 m
10 m
100 m
1
10
100
1000
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
I
D
- Drain Current - (A)
yfs
- Forward Transfer Admittance - (S)
5
15
20
V
GS
- Gate to Source Voltage - (V)
R
DS (on)
- Drain to Source On-State Resistance - (
)
GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE
T
ch
- Channel Temperature - (C)
V
GS (off)
- Gate to Source Cutoff Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
1.5
I
D
- Drain Current - (A)
R
DS (on)
- Drain to Source On-State Resistance - (
)
10
0.1
1.0
0
0.5
1.0
0
1.0
10
1000
100
V
DS
= 10 V
Pulsed
T
ch
= 25 C
25 C
75 C
125C
10
1.5
1.0
0.5
Pulsed
I
D
= 25 A
13 A
6 A
1.0
10
1000
100
Pulsed
V
GS
= 10 V
50
0
50
100
150
4.0
3.5
3.0
2.5
2.0
1.5
1.0
T
c
= 25 C
Single Pulse
R
th (ch-a)
= 41.7 C/W
R
th (ch-c)
= 0.78 C/W
1000
100
10
1.0
0.1
0.01
0.001
2SK2371/2SK2372
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Q
g
- Gate Charge (nC)
V
DS
- Drain to Source Voltage - (V)
T
ch
- Channel Temperature - (C)
R
DS (on)
- Drain to Source On-State Resistance - (A)
REVERSE RECOVERY TIME vs.
REVERSE DRAIN CURRENT
I
F
- Forward Current - (A)
t
W
- Reverse Recovery Time - (ns)
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - (V)
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - (V)
I
SD
- Diode Forward Current - (A)
1.5
100
10
1.0
0.1
0.01
1.0
0.5
0
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - (V)
C
iss
, C
oss
, C
rss
- Capacitance - pF
1.0
10
100
1000
I
D
- Drain Current - (A)
t
d
(on),
t
r
, t
d
(off),
t
f
- Switching Time - (ns)
100
0.1
10
1.0
SWITCHING CHARACTERISTICS
50
0
50
100
150
1.0
0.5
0
I
D
= 25 A
13 A
V
GS
= 10 V
V
GS
= 0 V
Pulsed
1000
10000
1 000
100
10
1.0
0.1
1.0
10
100
C
iss
C
oss
C
rss
t
r
V
DD
= 150 V
V
GS
= 10 V
R
in
= 10
1.0
10
100
600
500
400
300
200
100
0.1
di/dt = 50 A/ s
V
GS
= 0
0
20
80
40
120
500
400
300
200
100
20
18
16
14
12
10
8
6
4
2
0
60
100
V
GS
V
DS
V
DD
= 400 V
250 V
125 V
t
f
t
d (off)
t
d (on)
V
GS
= 0 V
f = 1 MHz
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