Document Outline
- COVER
- DESCRIPTION
- FEATURES
- QUALITY GRADE
- ABSOLUTE MAXIMUM RATINGS (TA = 25 degree)
- PACKAGE DIMENSIONS
- ELECTRICAL CHARACTERISTICS (TA = 25 degree)
- TYPICAL CHARACTERISTICS (TA = 25 degree)
- REFERENCE
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2410 is N-Channel MOS Field Effect Transistor de-
signed for high speed switching applications.
FEATURES
Low On-Resistance
R
DS(on)1
= 40 m
MAX. (@ V
GS
= 10 V, I
D
= 15 A)
R
DS(on)2
= 60 m
MAX. (@ V
GS
= 4 V, I
D
= 15 A)
Low C
iss
C
iss
= 1500 pF TYP.
High Avalanche Capability Ratings
Built-in G-S Gate Protection Diodes
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
V
DSS
60
V
Gate to Source Voltage
V
GSS
20
V
Drain Current (DC)
I
D(DC)
30
A
Drain Current (pulse)*
I
D(pulse)
120
A
Total Power Dissipation (T
c
= 25 C)
P
T1
35
W
Total Power Dissipation (T
A
= 25 C) P
T2
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current**
I
AS
30
A
Single Avalanche Energy**
E
AS
90
mJ
*
PW
10
s, Duty Cycle
1 %
** Starting T
ch
= 25 C, R
G
= 25
, V
GS
= 20 V
0
2SK2410
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
The information in this document is subject to change without notice.
1994
DATA SHEET
Document No. TC-2497
(O. D. No. TC-8029)
Date Published November 1994 P
Printed in Japan
Drain
Source
Body
Diode
Gate
Gate Protection
Diode
MP-45F(ISOLATED TO-220)
10.0 0.3
3.2 0.2
4.5 0.2
2.7 0.2
15.0 0.3
3 0.1
12.0 0.2
13.5
MIN.
4 0.2
1.3 0.2
1.5 0.2
2.54
2.54
0.7 0.1
0.65 0.1
2.5 0.1
1 2 3
1. Gate
2. Drain
3. Source
PACKAGE DIMENSIONS
(in millimeters)
2SK2410
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-Resistance
R
DS(on)1
31
40
V
GS
= 10 V, I
D
= 15 A
Drain to Source On-Resistance
R
DS(on)2
40
60
V
GS
= 4 V, I
D
= 15 A
Gate to Source Cutoff Voltage
V
GS(off)
1.0
1.5
2.0
V
DS
= 10 V, I
D
= 1 mA
Forward Transfer Admittance
| y
fs
|
15
27
V
DS
= 10 V, I
D
= 15 A
Drain Leakage Current
I
DSS
10
V
DS
= 60 V, V
GS
= 0
Gate to Source Leakage Current
I
GSS
10
V
GS
=
20 V, V
DS
= 0
Input Capacitance
C
iss
1500
V
DS
= 10 V
Output Capacitance
C
oss
720
V
GS
= 0
Reverse Transfer Capacitance
C
rss
190
f = 1 MHz
Turn-On Delay Time
t
d(on)
22
I
D
= 15 A
Rise Time
t
r
260
V
GS(on)
= 10 V
Turn-Off Delay Time
t
d(off)
130
V
DD
= 30 V
Fall Time
t
f
150
R
G
= 10
Total Gate Charge
Q
G
50
I
D
= 30 A
Gate to Source Charge
Q
GS
5.0
V
DD
= 48 V
Gate to Drain Charge
Q
GD
15
V
GS
= 10 V
Body Diode Forward Voltage
V
F(S-D)
1.1
I
F
= 30 A, V
GS
= 0
Reverse Recovery Time
t
rr
110
I
F
= 30 A, V
GS
= 0
Reverse Recovery Charge
Q
rr
320
di/dt = 100 A/
s
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
R
G
= 25
50
PG
L
V
DD
V
GS
= 20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
R
G
= 10
D.U.T.
PG.
0
t
R
L
V
DD
V
GS
t = 1 s
Duty Cycle
1 %
I
D
0
0
10 %
10 %
90 %
90 %
10 %
90 %
I
D
V
GS (on)
t
d (off)
t
d (on)
t
on
t
off
t
f
t
r
Test Circuit 3 Gate Charge
D.U.T.
R
L
V
DD
50
I
G
= 2 mA
PG.
V
DD
V
GS
R
G
D.U.T.
V
GS
Wave
Form
I
D
Wave
Form
UNIT
m
m
V
S
A
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2SK2410
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
100
80
60
40
20
0
50
40
30
20
10
0
20
40
60
80
100
120
140
160
20
40
60
80
100
120
140
160
dT - Percentage of Rated Power - %
P
T
- Total Power Disslipation - W
T
c
- Case Temperature - C
T
c
- Case Temperature - C
1000
100
100
90
10
1
80
70
60
50
40
30
20
10
0
0.1
1
10
100
2
4
6
8
10
12
I
D
- Drain Current - A
I
D
- Drain Current - A
I
D
- Drain Current - A
1000
100
10
5
10
15
V
DS
- Drain to Source Voltage - V
V
DS
- Drain to Source Voltage - V
V
GS
- Drain to Source Voltage - V
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
FORWARD BIAS SAFE OPERATING AREA
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
T
c
= 25 C
Single Pulse
V
GS
= 10 V
Pulsed
V
GS
= 6 V
V
GS
= 4 V
T
A
= 25 C
25 C
125 C
V
DS
= 10 V
Pulsed
PW = 10 s
200 ms
10 s
1 ms
10 ms
DC
Power Dissipation Limited
R
DS(on)
LImited
(at V
GS
= 10 V)
I
D (DC)
I
D(pulse)
0
2SK2410
4
1000
100
10
1
0.1
0.01
10
100
1 m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
r
th
(t)
- Transient Thermal Resistance - C/W
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1000
100
10
1
lyfsl - Forward Transfer Admittance - S
R
DS(on)
- Drain to Source On-State Resistance - m
0
10
20
30
40
50
60
1
10
100
5
10
15
20
25
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-State Resistance - m
V
GS(off)
- Gate to Source Cutoff Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
0
0
10
20
30
40
50
60
0.5
1.0
1.5
2.0
1
10
100
50
25
0
25
50
75
100
125
150
V
GS
= 4 V
V
GS
= 10 V
Pulsed
V
DS
= 10 V
I
D
= 1mA
V
DS
= 10 V
Pulsed
T
A
= 25 C
25 C
75 C
125 C
Single Pulse
R
th (ch - c)
= 3.57 C/W
R
th (ch - a)
= 62.5 C/W
I
D
= 15 A
2SK2410
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
80
70
60
50
40
30
20
10
0
50
0
50
100
150
0
0.5
1.0
1.5
2.0
1
10
100
1000
R
DS(on)
- Drain to Source On-State Resistance - m
I
SD
- Diode Forward Current - A
I
D
= 15 A
Tch - Channel Temperature - C
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10
1
C
iss
, C
oss
, C
rss
- Capacitance - pF
100
1000
10000
10
100
V
GS
= 0
f = 1 MHz
V
DS
- Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
DYANMIC INPUT/OUTPUT CHARACTERISTICS
10
0.1
0
10
t
rr
- Reverse Recovery time - ns
V
DS
- Drain to Source Voltage - V
100
1000
1.0
10
100
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
V
GS
- Gate to Source Voltage - V
2
4
6
8
10
12
14
16
I
D
= 30 A
V
GS
I
D
- Drain Current - A
Q
g
- Gate Charge - nC
SWITCHING CHARACTERISTICS
0.1
1.0
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10
100
1000
1.0
10
100
t
d(off)
I
D
- Drain Current - A
V
GS
= 4 V
V
GS
= 10 V
C
iss
C
oss
C
rss
di/dt = 50 A/ s
V
GS
= 0
V
DD
= 48 V
V
DS
V
DD
= 30 V
V
GS
= 10 V
R
G
= 10
Pulsed
t
d(on)
t
r
t
f
10 V
V
GS
= 0
2SK2410
6
10
100
1m
10m
10
1.0
100
25
0
50
75
100
125
150
20
40
60
80
100
I
AS
- Single Avalanche Energy -mJ
dt - Energy Derating Factor - %
L - Inductive Load - H
Starting T
ch
- Starting Channel Temperature - C
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
I
AS
= 30 A
E
AS
= 90 mJ
V
DD
= 30 V
R
G
= 25
V
GS
= 20 V
0
I
AS
30 A
V
DD
= 30 V
V
GS
= 20 V
0
R
G
= 25
2SK2410
7
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system.
TEI-1202
Quality grade on NEC semiconductor devices.
IEI-1209
Semiconductor device mounting technology manual.
IEI-1207
Semiconductor device package manual.
IEI-1213
Guide to quality assurance for semiconductor devices.
MEI-1202
Semiconductor selection guide.
MF-1134
Power MOS FET features and application switching power supply.
TEA-1034
Application circuits using Power MOS FET.
TEA-1035
Safe operating area of Power MOS FET.
TEA-1037
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
2SK2410
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear
reactor control systems and life support systems. If customers intend to use NEC devices for above applications
or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact
our sales people in advance.
Application examples recommended by NEC Corporation
Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment,
Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc.
Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime
systems, etc.
M4 92.6
[MEMO]
PDF 
ZIP