Document Outline
- COVER
- DESCRIPTION
- FEATURES
- QUALITY GRADE
- ABSOLUTE MAXIMUM RATINGS (TA = 25 degree)
- PACKAGE DIMENSIONS
- ELECTRICAL CHARACTERISTICS (TA = 25 degree)
- TYPICAL CHARACTERISTICS (TA = 25 degree)
- REFERENCE
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2413 is N-Channel MOS Field Effect Transistor de-
signed for high speed switching applications.
FEATURES
Low On-Resistance
R
DS(on)1
= 70 m
MAX. (@ V
GS
= 10 V, I
D
= 5.0 A)
R
DS(on)2
= 95 m
MAX. (@ V
GS
= 4 V, I
D
= 5.0 A)
Low C
iss
C
iss
= 860 pF TYP.
Built-in G-S Gate Protection Diodes
High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
V
DSS
60
V
Gate to Source Voltage
V
GSS
20
V
Drain Current (DC)
I
D(DC)
10
A
Drain Current (pulse)*
I
D(pulse)
40
A
Total Power Dissipation (T
A
= 25 C) P
T
1.8
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current**
I
AS
10
A
Single Avalanche Energy**
E
AS
10
mJ
*
PW
10
s, Duty Cycle
1 %
** Starting T
ch
= 25 C, R
G
= 25
, V
GS
= 20 V
0
2SK2413
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
The information in this document is subject to change without notice.
1994
DATA SHEET
Document No. TC-2494
(O. D. No. TC-8032)
Date Published November 1994 P
Printed in Japan
4.5 0.2
13.0 0.2
1. Gate
2. Drain
3. Source
Drain
Gate
Source
Body
Diode
Gate Protection
Diode
8.0 0.2
1
2 3
1.4 0.2
0.5 0.1
0.5 0.1
0.5 0.1
1.4 0.2
2.5 0.2
MP-10 (ISOLATED TO-220)
PACKAGE DIMENSIONS
(in millimeter)
2SK2413
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-Resistance
R
DS(on)1
50
70
V
GS
= 10 V, I
D
= 5.0 A
Drain to Source On-Resistance
R
DS(on)2
70
95
V
GS
= 4 V, I
D
= 5.0 A
Gate to Source Cutoff Voltage
V
GS(off)
1.0
1.6
2.0
V
DS
= 10 V, I
D
= 1 mA
Forward Transfer Admittance
| y
fs
|
7.0
12
V
DS
= 10 V, I
D
= 5.0 A
Drain Leakage Current
I
DSS
10
V
DS
= 60 V, V
GS
= 0
Gate to Source Leakage Current
I
GSS
10
V
GS
=
20 V, V
DS
= 0
Input Capacitance
C
iss
860
V
DS
= 10 V
Output Capacitance
C
oss
440
V
GS
= 0
Reverse Transfer Capacitance
C
rss
110
f = 1 MHz
Turn-On Delay Time
t
d(on)
15
I
D
= 5.0 A
Rise Time
t
r
90
V
GS(on)
= 10 V
Turn-Off Delay Time
t
d(off)
75
V
DD
= 30 V
Fall Time
t
f
30
R
G
= 10
Total Gate Charge
Q
G
24
I
D
= 20 A
Gate to Source Charge
Q
GS
3.0
V
DD
= 48 V
Gate to Drain Charge
Q
GD
6.0
V
GS
= 10 V
Body Diode Forward Voltage
V
F(S-D)
1.0
I
F
= 10 A, V
GS
= 0
Reverse Recovery Time
t
rr
95
I
F
= 10 A, V
GS
= 0
Reverse Recovery Charge
Q
rr
250
di/dt = 100 A/
s
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
R
G
= 25
50
PG
L
V
DD
V
GS
= 20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
R
G
= 10
D.U.T.
PG.
0
t
R
L
V
DD
V
GS
t = 1 s
Duty Cycle
1 %
I
D
0
0
10 %
10 %
90 %
90 %
10 %
90 %
I
D
V
GS (on)
t
d (off)
t
d (on)
t
on
t
off
t
f
t
r
Test Circuit 3 Gate Charge
D.U.T.
R
L
V
DD
50
I
G
= 2 mA
PG.
V
DD
V
GS
R
G
D.U.T.
V
GS
Wave
Form
I
D
Wave
Form
UNIT
m
m
V
S
A
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2SK2413
3
Radial Tape Specification
Dimension (unit: mm)
Item
Component Body Length along Tape
A
1
8.0
0.2
Component Body Height
A
13.0
0.2
Component Body Width
T
4.5
0.2
Component Lead Width Dimension
d
0.5
0.1
Lead Wire Enclosure
I
1
2.5 MIN.
Component Center Pitch
P
12.7
1.0
Feedhole Pitch
P
0
12.7
0.3
Feedhole Center to Center Lead
P
2
6.35
0.5
Component Lead Pitch
F
1
, F
2
2.5
+0.4
0.1
Deflection Front or Rear
h
1.0
Deflection Left or Right
P
1.3
Carrier Strip Width
W
18.0
+1.0
0.5
Adhesive Tape Width
W
0
5.0 MIN.
Feedhole Location
W
1
9.0
0.5
Adhesive Tape Position
W
2
0.7 MIN.
Height of Seating Plane
H
0
16.0
0.5
Feedhole to upper of Component
H
1
32.2 MAX.
Feedhole to Bottom of Component
H
20.0 MAX.
Tape Feedhole Diameter
D
0
4.0
0.2
Overall Taped Package Thickness
t
0.7
0.2
P
h
h
d
D
0
T
P
P
2
l
1
P
0
W
W
1
W
0
W
2
H
1
A
A
1
F
1
F
2
t
H
H
0
2SK2413
4
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
40
60
80
100
120
140
160
20
40
60
80
100
20
40
60
80
100
120
140
160
0.4
0.8
1.2
1.6
2.0
V
GS
= 10 V
0
2
50
4
6
8
10
V
GS
= 4 V
V
GS
= 6 V
0
10
4
8
100
1000
V
GS
- Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
T
a
- Ambient Temperature - C
T
a
- Ambient Temperature - C
P
T
- Total Power Dissipation - W
dT - Percentage of Rated Power - %
I
D
- Drain Current - A
I
D
- Drain Current - A
0
0
20
40
30
20
10
1
2
3
5
6
7
1
Pulsed
FORWARD BIAS SAFE OPERATING AREA
100
10
1
1
10
100
10 ms
I
D (DC)
PW = 10 s
100 s
1 ms
T
A
= 25 C
Single Pulse
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0.1
200 ms
Pulsed
T
A
= 25 C
25 C
75 C
125 C
V
DS
= 10 V
I
D(pulse)
R
DS (on)
Limited
(at V
GS
= 10 V)
Power Dissipation Limited
2SK2413
5
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1000
100
10
1
0.1
0.01
10
100
1 m
10 m
100 m
1
10
100
1000
Single Pulse
PW - Pulse Width - s
100
10
1
1
10
100
I
D
- Drain Current - A
120
100
80
60
40
20
0
0
10
20
I
D
= 5 A
V
GS
- Gate to Source Voltage - V
2.0
50
1.5
1.0
0.5
0
0
50
100
150
T
ch
- Channel Temperature - C
V
DS
= 10 V
I
D
= 1 mA
160
1
I
D
- Drain Current - A
140
100
80
60
0
10
100
V
GS
= 10 V
V
GS
= 4 V
R
DS (on)
- Drain to Source On-State Resistance - m
|y
fs
| - Forward Transfer Admittance - S
r
th
(t) - Transient Thermal Resistance - C/W
R
DS (on)
- Drain to Source On-State Resistance - m
V
GS (off)
- Gate to Source Cutoff Voltage - V
V
DS
= 10 V
Pulsed
120
Pulsed
40
20
Pulsed
T
A
= 25 C
25 C
75 C
125 C
R
th (ch-a)
= 69.4 C/W
2SK2413
6
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
0
50
T
ch
- Channel Temperature - C
40
120
80
0
50
150
100
V
GS
= 4 V
V
GS
= 10 V
I
D
- Drain Current - A
1000
100
10
1.0
0.1
1.0
10
100
I
D
- Drain Current - A
Q
g
- Gate Charge - nC
10
0.1
1.0
10
100
100
di/dt = 50 A/ s
V
GS
= 0
0
0
10
20
30
40
10
20
30
40
50
60
70
80
0
2
4
6
8
10
12
14
16
V
DS
V
GS
I
D
= 10 A
V
DD
= 48 V
R
DS (on)
- Drain to Source On-State Resistance - m
t
rr
- Reverse Recovery time - ns
t
d (on)
, t
r
, t
d (off)
, t
f
- Switching Time - ns
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
I
D
= 5 A
V
DD
= 30 V
V
GS
= 10 V
R
G
= 10
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1
0
V
GS
= 0
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
Pulsed
2.0
1.0
0.1
10 V
t
d (on)
t
f
t
d (off)
t
r
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10
1
V
DS
- Drain to Source Voltage - V
10
100
100
1000
10000
C
iss
, C
oss
, C
rss
- Capacitance - pF
C
rss
C
oss
C
iss
V
GS
= 0
f = 1 MHz
2SK2413
7
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
100
10
1.0
10
100
1 m
10 m
L - Inductive Load - H
100
80
60
40
20
0
25
50
75
100
125
150
Starting T
ch
- Starting Channel Temperature - C
V
DD
= 30 V
R
G
= 25
V
GS
= 20 V
0
I
AS
10 A
I
AS
- Single Avalanche Energy - mJ
dt - Energy Derating Factor - %
V
DD
= 30 V
V
GS
= 20 V
0
R
G
= 25
I
AS
= 10 A
E
AS
= 10 mJ
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system.
TEI-1202
Quality grade on NEC semiconductor devices.
IEI-1209
Semiconductor device mounting technology manual.
IEI-1207
Semiconductor device package manual.
IEI-1213
Guide to quality assurance for semiconductor devices.
MEI-1202
Semiconductor selection guide.
MF-1134
Power MOS FET features and application switching power supply.
TEA-1034
Application circuits using Power MOS FET.
TEA-1035
Safe operating area of Power MOS FET.
TEA-1037
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
2SK2413
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear
reactor control systems and life support systems. If customers intend to use NEC devices for above applications
or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact
our sales people in advance.
Application examples recommended by NEC Corporation
Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment,
Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc.
Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime
systems, etc.
M4 92.6
[MEMO]
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