Document Outline
- COVER
- DESCRIPTION
- FEATURES
- QUALITY GRADE
- ABSOLUTE MAXIMUM RATINGS (TA = 25 degree)
- PACKAGE DIMENSIONS
- ELECTRICAL CHARACTERISTICS (TA = 25 degree)
- TYPICAL CHARACTERISTICS (TA = 25 degree)
- REFERENCE
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2415 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
FEATURES
Low On-Resistance
R
DS(on)1
= 0.10
MAX. (@ V
GS
= 10 V, I
D
= 4.0 A)
R
DS(on)2
= 0.15
MAX. (@ V
GS
= 4 V, I
D
= 4.0 A)
Low C
iss
C
iss
= 570 pF TYP
.
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended applica-
tions.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage V
DSS
60 V
Gate to Source Voltage V
GSS
20 V
Drain Current (DC) I
D(DC)
8.0 A
Drain Current (pulse)* I
D(pulse)
32 A
Total Power Dissipation (T
c
= 25 C) P
T1
20 W
Total Power Dissipation (T
a
= 25 C) P
T2
1.0 W
Channel Temperature T
ch
150
C
Storage Temperature T
stg
55 to +150
C
Single Avalanche Current** I
AS
8.0 A
Single Avalanche Energy** E
AS
6.4 mJ
* PW
10
s, Duty Cycle
1 %
** Starting T
ch
= 25
C, R
G
= 25
, V
GS
= 20 V
0
Document No. D13207EJ1V1DS00 (1st edition)
(Previous No. TC-2496)
Date Published December 1997 N CP(K)
Printed in Japan
2SK2415, 2SK2415-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PACKAGE DIMENSIONS
(in millimeters)
The information in this document is subject to change without notice.
1994
1. Gate
2. Drain
3. Source
4. Fin (Drain)
6.5 0.2
TO-251 (MP-3)
5.0 0.2
2.3 0.2
0.5 0.1
0.6 0.1
0.6 0.1
1.3
MAX.
1.6 0.2
1
3
5.5 0.2
7.0
MAX.
13.7
MIN.
2.3 2.3
0.75
4
1.5
+
0.2
0.1
2
6.5 0.2
5.0 0.2
2.3 0.2
0.5 0.1
4.3
MAX.
1.3
MAX.
2.3 2.3
1 2
3
4
1.5
+
0.2
0.1
0.9
MAX.
0.8
MAX.
0.8
0.5
0.8
12.0
MIN.
1.0
MIN.
1.5
TYP.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
5.5 0.2
10.0
MAX.
Drain
Gate
Source
Body
Diode
Gate Protection
Diode
TO-252 (MP-3Z)
2SK2415, 2SK2415-Z
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-State Resistance
R
DS(on)1
0.07
0.10
V
GS
= 10 V, I
D
= 4.0 A
Drain to Source On-State Resistance
R
DS(on)2
0.10
0.15
V
GS
= 4 V, I
D
= 4.0 A
Gate to Source Cutoff Voltage
V
GS(off)
1.0
1.6
2.0
V
DS
= 10 V, I
D
= 1 mA
Forward Transfer Admittance
| y
fs
|
5.0
8.4
V
DS
= 10 V, I
D
= 4.0 A
Drain Leakage Current
I
DSS
10
V
DS
= 60 V, V
GS
= 0
Gate to Source Leakage Current
I
GSS
10
V
GS
=
20 V, V
DS
= 0
Input Capacitance
C
iss
570
V
DS
= 10 V
Output Capacitance
C
oss
290
V
GS
= 0
Reverse Transfer Capacitance
C
rss
75
f = 1 MHz
Turn-On Delay Time
t
d(on)
5
I
D
= 4.0 A
Rise Time
t
r
60
V
GS(on)
= 10 V
Turn-Off Delay Time
t
d(off)
75
V
DD
= 30 V
Fall Time
t
f
40
R
G
= 10
Total Gate Charge
Q
G
21
I
D
= 8.0 A
Gate to Source Charge
Q
GS
2.0
V
DD
= 48 V
Gate to Drain Charge
Q
GD
6.5
V
GS
= 10 V
Body Diode Forward Voltage
V
F(S-D)
1.0
I
F
= 8.0 A, V
GS
= 0
Reverse Recovery Time
t
rr
85
I
F
= 8.0 A, V
GS
= 0
Reverse Recovery Charge
Q
rr
200
di/dt = 100 A/
s
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
UNIT
V
S
A
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
R
G
= 25
50
D.U.T.
PG
L
V
DD
V
GS
= 20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
R
G
D.U.T.
PG.
0
t
R
L
V
DD
V
GS
t = 1 s
Duty Cycle 1 %
V
GS
Wave
Form
I
D
Wave
Form
I
D
0
0
10 %
10 %
90 %
90 %
10 %
90 %
I
D
V
GS (on)
t
d (off)
t
d (on)
t
on
t
off
t
f
t
r
V
GS
R
G
= 10
D.U.T.
R
L
V
DD
50
I
G
= 2 mA
PG.
Test Circuit 3 Gate Charge
2SK2415, 2SK2415-Z
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
40
60
100
120
140
160
20
40
60
80
100
T
c
- Case Temperature - C
dT - Percentage of Rated Power - %
0
20
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
20
40
60
80
100
120
140
160
8
12
16
20
24
T
c
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
4
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0
2
40
4
6
8
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
32
24
16
8
FORWARD BIAS SAFE OPERATING AREA
100
10
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0.1
1
Power Dissipation Limited
10 ms
DC
R
DS (on)
Limited
(at V
GS
= 10 V)
I
D (DC)
I
D (pulse)
100 s
1 ms
T
C
= 25 C
Single Pulse
PW = 10 s
Pulsed
V
GS
= 4 V
V
GS
= 6 V
V
GS
= 10 V
FORWARD TRANSFER CHARACTERISTICS
0
4
8
V
GS
- Gate to Source Voltage - V
1
2
3
5
6
7
Ta = - 25 C
25 C
125 C
Pulsed
V
DS
= 10 V
100
1000
1
10
I
D
- Drain Current - A
80
2SK2415, 2SK2415-Z
4
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
1
0.1
0.01
10
100
1 m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance - C/W
R
DS(on)
- Drain to Source On-State Resistance - m
160
140
120
100
80
60
40
20
0
DRAIN TO SOURCE ON-STATE
RESITANCE vs. DRAIN CURRENT
1
100
I
D
- Drain Current - A
10
V
GS(off)
- Gate to Source Cutoff Voltage - V
2.0
1.5
1.0
0.5
0
- 50
- 25
0
25
50
75
100
125
150
V
DS
= 10 V
I
D
= 1 mA
Tch - Channel Temperature - C
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
Pulsed
Single Pulse
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
10
1
1
10
Ta = - 25 C
25 C
75 C
125 C
V
DS
= 10 V
Pulsed
IyfsI- Forward Transfer Admittance - S
I
D
- Drain Current - A
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
140
120
100
80
60
40
20
5
10
15
20
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-State Resistance - m
Pulsed
25
0
I
D
= 4.0 A
V
GS
= 4 V
V
GS
= 10 V
R
th(ch-a)
= 125 C/W
R
th(ch-c)
= 6.25 C/W
2SK2415, 2SK2415-Z
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
180
160
140
120
100
80
60
40
20
0
- 50
0
50
100
150
V
GS
= 10 V
I
D
= 4.0 A
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-State Resistance - m
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1
1.0
0
2.0
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
SWITCHING CHARACTERISTICS
1 000
100
10
1.0
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
0.1
1.0
10
100
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
0.1
1.0
10
t
rr
- Reverse Recovery time - ns
I
D
- Drain Current - A
0
10
20
30
40
80
70
60
50
40
30
20
10
V
DS
V
GS
I
D
= 8.0 A
V
DD
= 48 V
V
DS
- Drain to Source Voltage - V
Q
g
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
V
GS
= 4 V
16
14
12
10
8
6
4
2
0
Pulsed
di/dt = 50 A/ s
V
GS
= 0
V
DD
= 30 V
V
GS
= 10 V
R
G
= 10
10 V
V
GS
= 0
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10 000
1 000
100
10
1
10
100
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0
f = 1 MHz
C
rss
C
oss
t
f
t
r
t
d(off)
t
d(on)
C
iss
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