1995
PRELIMINARY DATA SHEET
SILICON POWER MOS FIELD EFFECT TRANSISTOR
2SK2597
N-CHANNEL SILICON POWER MOSFET
FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE
POWER AMPLIFICATION
FEATURES
PACKAGE DRAWING (Unit: mm)
High output, high gain
P
O
= 100 W, G
L
= 13 dB (TYP.) (f = 900 MHz)
P
O
= 90 W, G
L
= 12 dB (TYP.) (f = 960 MHz)
Low intermodulation distortion
Covers all base station frequencies such as 800-MHz PDC
and GSM
High-reliability gold electrodes
Hermetic sealed package
Internal matching circuit
Push-pull structure
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Parameter
Symbol
Ratings
Unit
Drain-source voltage
V
DS
60
V
Gate-source voltage
V
GS
7
V
Drain current (D.C.)
I
D
15
Note
A
Total power dissipation
P
T
290
W
Thermal resistance
R
th
0.6
C/W
Channel temperature
T
ch
200
C
Storage temperature
T
stg
65 to +150
C
Note Per side
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Gate leakage current
I
GSS
V
GS
= 7 V
1
A
Cut-off voltage
V
GS(off)
V
DS
= 5 V, I
D
= 50 mA
1.5
4
V
Drain current
I
DSS
V
DS
= 60 V
2
mA
Mutual conductance
g
m
V
DS
= 5 V, I
D
= 3 A,
I
D
= 100 mA
2.0
S
Output power
P
O
f = 960 MHz, V
DD
= 30 V
80
90
W
Drain efficiency
D
I
DQ
= 200 mA
2, P
in
= 40 dBm
35
40
%
Linear gain
G
L
f = 960 MHz, V
DD
= 30 V
11
12
dB
I
DQ
= 200 mA
2, P
in
= 30 dBm
Third intermodulation distortion
IM
3
f = 900 MHz,
f = 0.1 MHz, V
DD
= 30 V
38
dBc
I
DQ
= 200 mA
2, P
O
= 42 dBm
G1
G2
D1
D2
3.30.3
S
45
45
28.00.3
13.50.3
3.20.2
3.20.2
1.4
0.3
11.40.3
19.40.4
21.50.3
4.7MAX.
1.50.2
0.1
2.50.2
G
1
, G
2
: gate
D
1
, D
2
: drain
S : source
Flange is connected to the source.
Document No. P10252EJ1V0DS00 (1st edition)
Date Published October 1995 P
Printed in Japan
The information in this document is subject to change without notice.
2SK2597
2
OUTPUT v.s. IM
3
, I
D
CHARACTERISTICS
20
30
40
50
60
5
4
3
2
1
0
28
32
36
40
44
48
30
34
38
42
46
THIRD ORDER INTERMODULATION DISTORTION / DRAIN
CURRENT v.s. OUTPUT POWER
IM
3
(dBc)
I
D
(A)
P
OUT
(dBm)
(AVERAGE POWER)
Vds = 30 V CLASS AB
f1 = 900.0 MHz Idq = 200 mA
2
f2 = 900.1 MHz Idq = 500 mA
2
IM
3
I
D
INPUT v.s. OUTPUT, POWER GAIN, EFFICIENCY
(1) f = 960 MHz
1000
100
10
1
.1
100
10
12
20
28
36
44
52
16
24
32
40
48
f = 960 MHz
V
DD
= 30 V
I
DQ
= 200 mA
2
P
out
G
P
OUTPUT POWER / DRAIN EFFICIENCY /
POWER GAIN vs. INPUT POWER
P
in
(dBm)
P
out
(W)
G
P
(dB)
D
(%)
D
2SK2597
3
(2) f = 900 MHz
100
10
12
20
28
36
44
52
16
24
32
40
48
f = 900 MHz
V
DD
= 30 V
I
DQ
= 200 mA
2
P
out
G
P
OUTPUT POWER / DRAIN EFFICIENCY /
POWER GAIN vs. INPUT POWER
P
in
(dBm)
P
out
(w)
G
P
(dB)
D
(%)
D
1000
100
10
1
.1
(3) f = 820 MHz
1000
100
10
1
.1
100
10
12
20
28
36
44
52
16
24
32
40
48
f = 820 MHz
V
DD
= 30 V
I
DQ
= 200 mA
2
P
out
G
P
OUTPUT POWER / DRAIN EFFICIENCY /
POWER GAIN vs. INPUT POWER
P
in
(dBm)
P
out
(W)
G
P
(dB)
D
(%)
D
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