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Электронный компонент: 2SK2826

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1998
MOS FIELD EFFECT TRANSISTOR
2SK2826
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
D11273EJ2V0DS00 (2nd edition)
Date Published
April 1999 NS CP(K)
Printed in Japan
The mark
shows major revised points.
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super Low On-State Resistance
R
DS(on)1
= 6.5 m
(MAX.) (V
GS
= 10 V, I
D
= 35 A)
R
DS(on)2
= 9.7 m
(MAX.) (V
GS
= 4.0 V, I
D
= 35 A)
Low C
iss
: C
iss
= 7200 pF (TYP.)
Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
60
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS(AC)
20
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS(DC)
+20, 10
V
Drain Current (DC)
I
D(DC)
70
A
Drain Current (Pulse)
Note1
I
D(pulse)
280
A
Total Power Dissipation (T
C
= 25C)
P
T
100
W
Total Power Dissipation (T
A
= 25C)
P
T
1.5
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to + 150
C
Single Avalanche Current
Note2
I
AS
70
A
Single Avalanche Energy
Note2
E
AS
490
mJ
Notes 1. PW
10
s, Duty cycle
1 %
2. Starting Tch = 25 C, R
A
= 25
,
V
GS
= 20 V
0 V
THERMAL RESISTANCE
Channel to Case
R
th
(ch-C)
1.25
C/W
Channel to Ambient
R
th
(ch-A)
83.3
C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK2826
TO-220AB
2SK2826-S
TO-262
2SK2826-ZJ
TO-263
Data Sheet D11273EJ2V0DS00
2
2SK2826
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 35 A
5.5
6.5
m
R
DS(on)2
V
GS
= 4.0 V, I
D
= 35 A
7.0
9.7
m
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.0
1.5
2.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 35 A
20
94
S
Drain Leakage Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
10
A
Gate to Source Leakage Current
I
GSS
V
GS
= 20 V, V
DS
= 0 V
10
A
Input Capacitance
C
iss
V
DS
= 10 V
7200
pF
Output Capacitance
C
oss
V
GS
= 0 V
2000
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
700
pF
Turn-on Delay Time
t
d(on)
I
D
= 35 A
100
ns
Rise Time
t
r
V
GS(on)
= 10 V
1200
ns
Turn-off Delay Time
t
d(off)
V
DD
= 30 V
440
ns
Fall Time
t
f
R
G
= 10
520
ns
Total Gate Charge
Q
G
I
D
= 70 A
150
nC
Gate to Source Charge
Q
GS
V
DD
= 48 V
20
nC
Gate to Drain Charge
Q
GD
V
GS
= 10 V
40
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 70 A, V
GS
= 0 V
0.97
V
Reverse Recovery Time
t
rr
I
F
= 70 A, V
GS
= 0 V
80
ns
Reverse Recovery Charge
Q
rr
di/dt = 100A/
s
250
nC
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20V
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
R
G
= 10
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
t = 1
s
Duty Cycle
1 %
t
V
GS
Wave Form
I
D
Wave Form
V
GS
I
D
10 %
0
0
90 %
90 %
90 %
V
GS(on)
I
D
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10 %
10 %



Data Sheet D11273EJ2V0DS00
3
2SK2826
TYPICAL CHARACTERISTICS (T
A
= 25 C)
FORWARD BIAS SAFE OPERATING AREA
V
DS -
Drain to Source Voltage - V
I
D
- Drain Current - A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
1
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature - C
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
20
0
20
40
60
80
100
120
140
160
20
40
60
80
100
40
60
80
100
120
140
160
140
120
100
80
60
40
20
1
0.1
10
100
1000
1
10
100
T
C
= 25C
Single Pulse
0
0.4
0.6
0.8
40
10
100
1000
Pulsed
100
80
60
0.2
0
Pulsed
2
V
GS
=10 V
4
T
A
= -25C
25C
75C
125C
6
8
Power Dissipation Limited
DC
I
D(DC)
10 ms
I
D(pulse)
V
DS
= 10 V
20
R
DS(on)
Limited
(at VGS =10 V)
1 ms
100 ms
V
GS
= 4.0 V
PW = 10
s
100
s
Data Sheet D11273EJ2V0DS00
4
2SK2826
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance -
C
/W
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-State Resistance - m
0
10
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
- Gate to Source Cutoff Voltage - V
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance - m
10
10
10
0.001
0.01
0.1
1
100
1 000
1 m
10 m
100 m
1
10
100
1 000
V
DS
=10V
Pulsed
0.1
1.0
10
100
10
100
10
30
20
30
Pulsed
20
30
100
1000
Pulsed
Single Pulse
0
0.5
V
DS
= 10 V
I
D
= 1 mA
1.0
1.5
2.0
- 50
0
50
100
150
0
R
th
(ch
-
A) = 83.3 C/W
V
GS
= 10 V
0.1
1.0
20
V
GS
= 4.0 V
T
A
= 175C
75C
25C
-25C
V
GS
= 0V
200
T
C
= 25C
10
100
R
th
(ch
-
C) = 1.25 C/W
T
ch
- Channel Temperature - C
T
A
= 25C
I
D
= 35 A
Data Sheet D11273EJ2V0DS00
5
2SK2826
1.0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance - m
I
SD
- Diode Forward Current - A
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10
0.1
0
- 50
5
0
50
100
150
I
D
= 25 A
100
0.1
1 000
10 000
100 000
1
10
100
V
GS
= 0 V
f = 1 MHz
100
1 000
10 000
1
10
V
GS
- Gate to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/
s
V
GS
= 0 V
1
0.1
10
1.0
10
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
50
100
150
200
20
40
60
80
2
4
10
20
15
C
oss
C
rss
V
DD
= 48 V
30 V
12 V
V
DS
t
f
1000
100
6
8
V
GS
V
GS
= 10 V
0
1.5
t
r
t
d(on)
t
d(off)
V
SD
- Source to Drain Voltage - V
0.5
Pulsed
V
GS
= 10 V
V
GS
= 0 V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
0.1
1
10
100
V
GS
= 4.0 V
C
iss
100
V
DD
= 30 V
V
GS
= 10 V
R
G
= 10
Data Sheet D11273EJ2V0DS00
6
2SK2826
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
L
- Inductive Load - H
| I
AS
| - Single Avalanche Energy - mJ
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting Tch - Starting Channel Temperature - C
Energy Derating Factor - %
25
50
75
100
V
DD
= 30 V
R
G
= 25
10
100
10
100
1 m
10 m
60
40
20
0
160
140
125
150
1.0
120
100
80
I
AS
= 70 A
E
AS
= 490 mJ
V
DD
= 30 V
R
G
= 25
V
GS
= 20 V
0 V
V
GS
=
20
V
0
V
I
AS
70 A
Data Sheet D11273EJ2V0DS00
7
2SK2826
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25) 2)TO-262 (MP-25 Fin Cut)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0
3.60.2
4
3.00.3
1.30.2
0.750.1
2.54 TYP.
2.54 TYP.
5.9 MIN.
6.0 MAX.
15.5 MAX.
12.7 MIN.
1.30.2
0.50.2
2.80.2
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
(10)
4
1.30.2
0.750.3
2.54 TYP.
2.54 TYP.
8.5
0.2
12.7 MIN.
1.30.2
0.50.2
2.80.2
1.00
.
5
3)TO-263 (MP-25ZJ)
(10)
1.40.2
1.00.5
2.54 TYP.
2.54 TYP.
8.50.2
1
2
3
5.70.4
4
2.80.2
4.8 MAX.
1.30.2
0.50.2
(0.5R)
(0.8R)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.70.2
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
EQUIVALENT CIRCUIT
2SK2826
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
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rights of third parties by or arising from use of a device described herein or any other liability arising from use
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the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
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M7 98. 8