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Электронный компонент: 2SK2981

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The information in this document is subject to change without notice.
1998
MOS FIELD EFFECT TRANSISTOR
2SK2981
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
D12355EJ1V0DS00 (1st edition)
Date Published
December 1998 NS CP(K)
Printed in Japan
PACKAGE DRAWING (Unit : mm)
TO-251(MP-3)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
6.5 0.2
5.0 0.2
2.3 0.2
0.5 0.1
0.6 0.1
0.6 0.1
1.3 MAX.
1.6 0.2
1
2 3
5.5 0.2
7.0
MIN.
13.7
MIN.
2.3 2.3
0.75
4
6.5 0.2
5.0 0.2
2.3 0.2
0.5 0.1
4.3
MAX.
1.3 MAX.
2.3 2.3
1 2
3
4
5.5 0.2
10.0 MAX.
1.5
+0.2
0.1
1.5
+0.2
0.1
0.9
MAX.
0.8
MAX.
0.8
0.5
0.8
12.0
MIN.
1.0
MIN.
1.5
TYP.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
TO-252(MP-3Z) (SURFACE MOUNT TYPE)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
Low on-resistance
R
DS(on)1
= 27 m
(MAX.) (V
GS
= 10 V, I
D
= 10 A)
R
DS(on)2
= 40 m
(MAX.) (V
GS
= 4.5 V, I
D
= 10 A)
R
DS(on)3
= 50 m
(MAX.) (V
GS
= 4 V, I
D
= 10 A)
Low C
iss
: C
iss
= 860 pF (TYP.)
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK2981
TO-251
2SK2981-Z
TO-252
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage (V
GS
= 0)
V
DSS
30
V
Gate to Source Voltage (V
DS
= 0)
V
GSS
20
V
Drain Current (DC)
I
D(DC)
20
A
Drain Current (Pulse)
Note
I
D(pulse)
80
A
Total Power Dissipation (T
c
= 25 C)
P
T
20
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to + 150
C
Note PW
10
s, Duty cycle
1 %
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Data Sheet D12355EJ1V0DS00
2
2SK2981
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 10 A
20
27
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 10 A
30
40
m
R
DS(on)3
V
GS
= 4 V, I
D
= 10 A
35
50
m
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.0
1.5
2.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 10 A
6.0
13.0
S
Drain Leakage Current
I
DSS
V
DS
= 30 V, V
GS
= 0
10
A
Gate to Source Leakage Current
I
GSS
V
GS
= 20 V, V
DS
= 0
10
A
Input Capacitance
C
iss
V
DS
= 10 V, V
GS
= 0, f = 1 MHz
860
pF
Output Capacitance
C
oss
350
pF
Reverse Transfer Capacitance
C
rss
160
pF
Turn-on Delay Time
t
d(on)
I
D
= 10 A, V
GS(on)
= 10 V, V
DD
= 15 V
25
ns
Rise Time
t
r
R
G
= 10
270
ns
Turn-off Delay Time
t
d(off)
65
ns
Fall Time
t
f
65
ns
Total Gate Charge
Q
G
I
D
= 20 A, V
DD
= 24 V, V
GS
= 10 V
20
nC
Gate to Source Charge
Q
GS
3.5
nC
Gate to Drain Charge
Q
GD
6.5
nC
Body Diode forward Voltage
V
F(S-D)
I
F
= 20 A, V
GS
= 0
0.8
V
Reverse Recovery Time
t
rr
I
F
= 20 A, V
GS
= 0
35
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
30
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
R
L
V
DD
R
G
R
G
=
10
PG.
Duty Cycle
1 %
V
GS (on)
90 %
0
10 %
90 %
I
D
0
10 %
I
D
V
GS
90 %
10 %
t
d (on)
t
on
t
off
t
r
t
d (off)
t
f
V
GS
Wave Form
I
D
Wave Form
D.U.T.
50
PG.
V
DD
I
G
=
2
mA
R
L
0
V
GS
t
s
t = 1
Data Sheet D12355EJ1V0DS00
3
2SK2981
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature - C
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
140
160
20
40
60
80
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
20
40
60
80
100
120
140
160
35
30
25
20
15
10
5
FORWARD BIAS SAFE OPERATING AREA
V
DS -
Drain to Source Voltage - V
I
D
- Drain Current - A
0.1
0.1
1
10
100
1
10
100
T
C
= 25C
Single Pulse
Power Dissipation Limited
I
D(DC)
=20
A
R
DS(on)
Limited
(at V
GS
=10 V)
PW = 500
s
PW = 1 ms
PW = 10 ms
PW = 100 ms
I
D(PULSE)
=80
A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0
2
3
4
60
100
1
Pulsed
V
GS
=10.0 V
20
4.5 V
4.0 V
40
80
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
1
10
100
1000
Pulsed
0
2
4
T
A
=
-
25C
25C
75C
125C
6
8
Data Sheet D12355EJ1V0DS00
4
2SK2981
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance -
C
/W
10
0.001
0.01
0.1
1
100
1 000
1 m
10 m
100 m
1
10
100
1000
10
100
Single Pulse
R
th(ch-a)
= 125 C/W
R
th(ch-c)
= 6.25 C/W
T
C
= 25C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
V
DS
= 10 V
Pulsed
0.1
1
1
10
100
10
100
0.1
T
ch
=
-
25C
25C
75C
125C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - m
0
5
20
10
15
Pulsed
60
40
I
D
= 10 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
40
1
60
10
100
Pulsed
0
10.0 V
20
V
GS
= 4.0 V
4.5 V
0.2
80
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
-
50
0
50
100
150
0
1.0
2.0
1.5
0.5
Data Sheet D12355EJ1V0DS00
5
2SK2981
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance - m
0
-
50
20
0
50
100
150
I
D
= 10 A
40
80
60
10.0 V
4.5 V
V
GS
= 4.0 V
1.0
I
SD
- Diode Forward Current - A
0
1.5
V
SD
- Source to Drain Voltage - V
0.5
Pulsed
V
GS
= 10 V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
0.1
1
10
100
0 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
10
0.1
100
1000
10000
1
10
100
V
GS
= 0 V
f = 1 MHz
C
oss
C
rss
C
iss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
1
0.1
10
100
1000
1
10
100
V
DD
= 15 V
V
GS
= 10 V
R
G
= 10
t
f
t
r
t
d(on)
t
d(off)
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Diode Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/
s
V
GS
= 0 V
1
0.1
10
1
10
100
1000
100
V
GS
- Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
9
12
24
3
10
20
30
40
2
4
6
8
0
V
DD
= 24 V
15 V
6 V
V
DS
12
14
10
I
D
= 20 A
V
GS
= 10 V
V
GS
6
15
18
21