The information in this document is subject to change without notice.
1998
MOS FIELD EFFECT TRANSISTOR
2SK2983
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D12357EJ1V0DS00 (1st edition)
Date Published October 1998 NS CP (K)
Printed in Japan
DATA SHEET
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching application.
FEATURES
Low on-resistance
R
DS(on)1
= 20 m
(
MAX.) (V
GS
= 10 V, I
D
= 15 A)
R
DS(on)2
= 27 m
(
MAX.) (V
GS
= 4.5 V, I
D
= 15 A)
Low C
iss
C
iss
= 1200 pF TYP.
Built-in gate protection diode
ORDERING INFOMATION
PART NUMBER
PACKAGE
2SK2983
TO-220AB
2SK2983-S
TO-262
2SK2983-ZJ
TO-263
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
Note1
V
DSS
30
V
Gate to Source Voltage
Note2
V
GSS
20
V
Drain Current (DC)
I
D(DC)
30
A
Drain Current (pulse)
Note3
I
D(pulse)
120
A
Total Power Dissipation (T
A
= 25C)
P
T
1.5
W
Total Power Dissipation (T
C
= 25C)
P
T
50
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
-
55 to +150
C
Notes1. V
GS
= 0 V
2. V
DS
= 0 V
3. PW
10
s, Duty Cycle
1 %
.
2
2SK2983
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
DS(on)1
V
GS
= 10 V, I
D
= 15 A
13.0
20.0
m
Drain to Source On-state Resistance
R
DS(on)2
V
GS
= 4.5 V, I
D
= 15 A
18.0
27.0
m
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.0
1.5
2.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 15 A
9.0
19
S
Drain Leakage Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
10
A
Gate to Source Leakage Current
I
GSS
V
GS
= 20 V, V
DS
= 0 V
10
A
Input Capacitance
C
iss
1200
pF
Output Capacitance
C
oss
530
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
250
pF
Turn-on Delay Time
t
d(on)
50
ns
Rise Time
t
r
820
ns
Turn-off Delay Time
t
d(off)
100
ns
Fall Time
t
f
I
D
= 15 A
V
GS(on)
= 10 V
V
DD
= 15 V
R
G
= 10
170
ns
Total Gate Charge
Q
G
30
nC
Gate to Source Charge
Q
GS
4.5
nC
Gate to Drain Charge
Q
GD
I
D
= 30 A
V
DD
= 24 V
V
GS
= 10 V
7.5
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 30 A, V
GS
= 0 V
0.8
V
Reverse Recovery Time
t
rr
35
ns
Reverse Recovery Charge
Q
rr
I
F
= 30 A, V
GS
= 0 V
di/dt = 100 A /
S
65
nC
TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
10 %
90 %
V
GS(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
R
G
= 10
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
3
2SK2983
TYPICAL CHARACTERISTICS (T
A
= 25 C)
FORWARD BIAS SAFE OPERATING AREA
V
DS -
Drain to Source Voltage - V
I
D
- Drain Current - A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
1
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature - C
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
20
0
20
40
60
80
100
120
140
160
20
40
60
80
100
40
60
80
100
120
140
160
70
60
50
40
30
20
10
1
0.1
10
100
1000
1
10
100
T
C
= 25C
Single Pulse
0
1.0
1.5
2.0
100
10
100
1000
150
0.5
0
Pulsed
2
4
V
GS
= 10V
6
8
P
W
= 1 ms
Power Dissipation Limited
100 ms
I
D(DC)
= 30 A
10 ms
I
D
(pulse)
= 120 A
V
DS
=10V
50
4.5V
R
DS(on)
Limited(V
GS
= 10 V)
200
T
C
= 125C
75C
Pulsed
-25C
25C
4
2SK2983
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance -
C
/W
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
0
5
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
- Gate to Source Cut-off Voltage - V
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
20
1
10
0.001
0.01
0.1
1
100
1 000
1 m
10 m
100 m
1
10
100
1 000
V
DS
=10 V
Pulsed
1
10
10
100
1000
100
1000
20
10
15
Pulsed
30
10
100
Pulsed
0
V
DS
= 10 V
I
D
= 1 mA
- 50
0
50
100
150
0
1
Single Pulse
1.0
2.0
60
40
1.5
0.5
10
R
th(ch-a) =
83.3C/W
R
th(ch-c) =
2.5C/W
10
100
T
C
= 25C
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - m
T
ch
- Channel Temperature - C
1
Pulsed
10
100
0
- 50
0
50
100
150
0
T
c
= -25C
25C
75C
125C
I
D
=
15 A
V
GS
= 4.5 V
10 V
7.5 A
3 A
5
2SK2983
1.0
1.0
1.0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance - m
I
SD
- Diode Forward Current - A
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
1
0.1
0
- 50
10
0
50
100
150
I
D
= 15 A
10
0.1
100
1000
10000
1
10
100
10
100
1000
1
10
100
V
GS
- Gate to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Diode Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/
s
V
GS
= 0 V
1
0.1
10
1
10
100
V
DD
= 15 V
V
GS
= 10 V
R
G
= 10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
10
20
30
40
10
20
30
40
20
40
30
C
iss
C
oss
C
rss
V
DD
= 24 V
15 V
6 V
V
DS
t
f
1000
100
I
D
= 30 A
V
GS
10 V
0
1.0
1.5
t
r
t
d(on)
t
d(off)
V
SD
- Source to Drain Voltage - V
0.5
Pulsed
V
GS
= 0 V
V
GS
= 4.5 V
0.1
1
100
10
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
V
GS
= 0 V
f = 1 MHz
2
4
6
8
10
12
14
6
2SK2983
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25)
2)TO-262 (TO-220 Fin Cut:MP-25S)
3)TO-263 (JEDEC TYPE:MP-25ZJ)
EQUIVALENT CIRCUIT
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0
3.60.2
4
3.00.3
1.30.2
0.750.1
2.54 TYP.
2.54 TYP.
5.9 MIN.
6.0 MAX.
15.5 MAX.
12.7 MIN.
1.30.2
0.50.2
2.80.2
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
(10)
4
1.30.2
0.750.3
2.54 TYP.
2.54 TYP.
8.5
0.2
12.7 MIN.
1.30.2
0.50.2
2.80.2
1.00
.
5
(10)
1.40.2
1.00.5
2.54 TYP.
2.54 TYP.
8.50.2
1
2
3
5.70.4
4
2.80.2
4.8 MAX.
1.30.2
0.50.2
(0.5R)
(0.8R)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.70.2
7
2SK2983
[MEMO]
2SK2983
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
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