The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1999
MOS FIELD EFFECT TRANSISTOR
2SK3054
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
D14209EJ2V0DS00 (2nd edition)
Date Published
March 2000 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3054 is a switching device which can be driven
directly by a 2.5-V power source.
The 2SK3054 has excellent switching characteristics,
and is suitable for use as a high-speed switching device
in digital circuits.
FEATURES
Can be driven by a 2.5-V power source
Low gate cut-off voltage
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
50
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
7
V
Drain Current (DC)
I
D(DC)
0.1
A
Drain Current (pulse)
Note
I
D(pulse)
0.2
A
Total Power Dissipation
P
T
150
mW
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Note PW
10 ms, Duty cycle
50 %
The mark
5
5
5
5
shows major revised points.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3054
SC-70
Data Sheet D14209EJ2V0DS00
2
2SK3054
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-off Current
I
DSS
V
DS
= 50 V, V
GS
= 0 V
1
A
Gate Leakage Current
I
GSS
V
GS
= 7 V, V
DS
= 0 V
5
A
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 3 V, I
D
= 1
A
0.9
1.2
1.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 3 V, I
D
= 10 mA
20
38
mS
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 2.5 V, I
D
= 10 mA
22
40
R
DS(on)2
V
GS
= 4.0 V, I
D
= 10 mA
14
20
Input Capacitance
C
iss
V
DS
= 3 V
8
pF
Output Capacitance
C
oss
V
GS
= 0 V
7
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
3
pF
Turn-on Delay Time
t
d(on)
V
DD
= 3 V
15
ns
Rise Time
t
r
I
D
= 20 mA
100
ns
Turn-off Delay Time
t
d(off)
V
GS(on)
= 3 V
30
ns
Fall Time
t
f
R
G
= 10
, R
L
= 150
35
ns
TEST CIRCUIT SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
10 %
90 %
V
GS(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
R
G
= 10
I
D
0
t
on
t
off
Data Sheet D14209EJ2V0DS00
3
2SK3054
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
A
- Ambient Temperature - C
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
140
160
20
40
60
80
100
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
- Ambient Temperature - C
P
T
- Total Power Dissipation - mW
0
30
60
90
120
150
180
300
250
200
150
100
50
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - mA
0
1.0
1.5
2.0
40
0.5
Pulsed
V
GS
= 4.5 V
80
100
60
20
V
GS
= 4.0 V
V
GS
= 2.5 V
FORWARD TRANSFER CHARACTERISTICS
V
GS
-
Gate to Source Voltage - V
I
D
- Drain Current - mA
0.1
0.01
1
10
100
Pulsed
0
1
2
V
DS
= 3 V
3
4
5
6
7
T
A
= 150 C
75 C
25 C
-
25 C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cut-off Voltage - V
V
DS
= 3 V
I
D
= 1
A
0
50
100
150
0.5
1.0
2.0
1.5
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - mA
| y
fs
| - Forward Transfer Admittance - mS
V
DS
= 5 V
f = 1 kHz
10
10
100
200
100 200
1
5
5
Data Sheet D14209EJ2V0DS00
4
2SK3054
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance -
0
1
3
5
7
9
6
10
10
Pulsed
30
20
8
4
2
I
D
= 100 mA
I
D
= 10 mA
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
I
D
- Drain Current - mA
Pulsed
1
0.1
10
100
10
100
1
R
DS(on)
- Drain to Source On-state Resistance -
V
GS
= 4.0 V
V
GS
= 2.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance -
50
0
10
100
150
I
D
= 5 mA
15
20
25
V
GS
= 2.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance -
50
0
100
150
I
D
= 5 mA
15
20
30
25
V
GS
= 4.0 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
1
1
10
100
10
100
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - mA
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
1
1
10
100
1 000
10
100
1000
V
DD
= 3 V
V
GS
= 3 V
R
GS
= 10
t
d(off)
t
d(on)
t
r
t
f
5
Data Sheet D14209EJ2V0DS00
5
2SK3054
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - mA
0.1
0.5
1
10
100
0.6
0.7
0.8
0.9
1.0
Pulsed
V
GS
= 0 V
Data Sheet D14209EJ2V0DS00
6
2SK3054
PACKAGE DRAWING (Unit: mm)
SC-70
2.1
0.1
1.25
0.1
2
1
3
2.0
0.2
0.65
0.3
+
0.1
-
0
0.65
0.3
+
0.1
-
0
0.3
0.9
0.1
0.15
+
0.1
-
0.05
0 to 0.1
Marking
Electrode
Connection
1. Source
2. Gate
3. Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Marking : G25
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Data Sheet D14209EJ2V0DS00
7
2SK3054
[MEMO]
2SK3054
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
PDF 
ZIP