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1998
MOS FIELD EFFECT TRANSISTOR
2SK3057
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
D13096EJ1V0DS00 (1st edition)
Date Published
March 1999 NS CP(K)
Printed in Japan
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching application.
FEATURES
Low on-state resistance
R
DS(on)1
= 17 m
MAX. (V
GS
= 10
V, I
D
= 23
A)
R
DS(on)2
= 27 m
MAX. (V
GS
= 4
V, I
D
= 23
A)
Low C
iss
: C
iss
= 2100
pF TYP.
Built-in gate protection diode
Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage
V
DSS
60
V
Gate to Source Voltage
V
GSS(AC)
20
V
Gate to Source Voltage
V
GSS(DC)
+20, 10
V
Drain Current (DC)
I
D(DC)
45
A
Drain Current (pulse)
Note1
I
D(pulse)
150
A
Total Power Dissipation (T
c
= 25C)
P
T
30
W
Total Power Dissipation (T
a
= 25C)
P
T
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note2
I
AS
22.5
A
Single Avalanche Energy
Note2
E
AS
50.6
mJ
Notes 1. PW
10
s, Duty Cycle
1 %
2. Starting T
ch
= 25
C, R
G
= 25
, V
GS
= 20
V
0
THERMAL RESISTANCE
Channel to Case
R
th(ch-c)
4.17
C/W
Channel to Ambient
R
th(ch-a)
62.5
C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3057
Isolated TO-220
Data Sheet D13096EJ1V0DS00
2
2SK3057
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10
V, I
D
= 23
A
12
17
m
R
DS(on)2
V
GS
= 4
V, I
D
= 23
A
17
27
m
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1
mA
1.0
1.6
2.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 23 A
13
42
S
Drain Leakage Current
I
DSS
V
DS
= 60
V, V
GS
= 0
V
10
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20
V, V
DS
= 0
V
10
A
Input Capacitance
C
iss
V
DS
= 10
V
2100
pF
Output Capacitance
C
oss
V
GS
= 0
V
550
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
220
pF
Turn-on Delay Time
t
d(on)
I
D
= 23
A
35
ns
Rise Time
t
r
V
GS(on)
= 10
V
410
ns
Turn-off Delay Time
t
d(off)
V
DD
= 30
V
120
ns
Fall Time
t
f
R
G
= 10
200
ns
Total Gate Charge
Q
G
I
D
= 45
A
45
nC
Gate to Source Charge
Q
GS
V
DD
= 48
V
7.0
nC
Gate to Drain Charge
Q
GD
V
GS(on)
= 10
V
13
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 45
A, V
GS
= 0
V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 45
A, V
GS
= 0
V
60
ns
Reverse Recovery Charge
Q
rr
di/dt = 100
A
/
s
100
nC
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
R
G
= 10
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1
s
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
I
D
10 %
0
0
90 %
90 %
90 %
V
GS(on)
I
D
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10 %
10 %
Data Sheet D13096EJ1V0DS00
3
2SK3057
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature -
C
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
140
160
20
40
60
80
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature -
C
P
T
- Total Power Dissipation - W
0
20
40
60
80
100
120
140
160
70
60
50
40
30
20
10
FORWARD BIAS SAFE OPERATING AREA
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
1
0.1
10
100
1000
1
10
100
T
C
= 25C
Single Pulse
R
DS(on)
Limited
P
W
= 10
s
100
s
1 ms
10
ms
100
ms
DC Dissipation Limited
I
D(DC)
I
D(pulse)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0
2
3
4
80
100
1
Pulsed
V
GS
= 10 V
V
GS
= 4 V
60
40
20
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
0.1
1
10
100
0
1
2
3
4
5
Pulsed
V
DS
= 10 V
T
A
= 125C
75C
25C
-
25C
Data Sheet D13096EJ1V0DS00
4
2SK3057
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance - C/
W
10
0.001
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
10
100
Single Pulse
R
th(ch-c)
= 4.17 C/W
R
th(ch-a)
= 62.5 C/W
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
|
y
fs
| - Forward Transfer Admittance - S
V
DS
= 10 V
Pulsed
0.1
1.0
1
10
100
10
100
0.1
T
ch
=
-
25C
25C
75C
125C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - m
0
10
20
10
30
50
70
20
30
Pulsed
60
40
I
D
= 30 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
40
1
0.1
60
80
10
100
0
20
Pulsed
V
GS
= 10 V
V
GS
= 4 V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
-
50
0
50
100
150
0
1.0
2.0
1.5
0.5
Data Sheet D13096EJ1V0DS00
5
2SK3057
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance -
m
0
-
50
10
0
50
100
150
I
D
= 20 A
20
40
30
V
GS
= 4 V
V
GS
= 10 V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
0.1
0
1
10
100
0.5
Pulsed
1
1.5
V
GS
= 0 V
V
GS
= 10 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
Ciss, Coss, Crss - Capacitance - pF
0.1
0.1
1
10
100
1
10
100
V
GS
= 0
f = 1 MHz
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
0.1
10
100
1000
10000
1
10
100
V
DD
= 30 V
V
GS
= 10 V
R
G
= 10
t
d(off)
t
d(on)
t
r
t
f
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A /
V
GS
= 0
s
1
0.1
10
1
10
100
1000
100
V
GS
- Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
20
40
60
80
20
40
60
80
2
4
6
8
0
V
DD
= 12 V
30 V
48 V
12
14
16
10
I
D
= 45 A
V
GS
= 10 V
Data Sheet D13096EJ1V0DS00
6
2SK3057
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
L - Inductive Load - H
I
AS
- Single Avalanche Energy - mJ
1.0
10
100
1 m
10 m
R
G
= 25
V
DD
= 30 V
V
GS
= 20 V
0
Starting T
ch
= 25
C
I
AS
= 22.5 A
10
100
0.1
E
AS
= 50.6
mJ
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting T
ch
- Starting Channel Temperature - C
Energy Derating Factor - %
25
50
75
100
160
140
120
100
80
60
40
20
0
125
150
V
DD
= 30V
R
G
= 25
V
GS
= 20 V
0 V
I
AS
22.5A
10.0
0.3
3.2
0.2
4.5
0.2
2.7
0.2
2.5
0.1
0.65
0.1
1.5
0.2
2.54
1.3
0.2
2.54
0.7
0.1
4
0.2
15.0
0.3
12.0
0.2
3
0.1
1
2 3
1.Gate
2.Drain
3.Source
13.5
MIN.
Isolated TO-220 (MP-45F)
Body
Diode
Source (S)
Drain (D)
Gate (G)
PACKAGE DRAWING (Unit : mm)
EQUIVALENT CIRCUIT
Gate
Protection
Diode
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Data Sheet D13096EJ1V0DS00
7
2SK3057
[MEMO]
2SK3057
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
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the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
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The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
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M7 98. 8
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