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1999,2001
MOS FIELD EFFECT TRANSISTOR
2SK3059
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
D13098EJ3V0DS00 (3rd edition)
Date Published
April 2001 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3059 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low on-state resistance
R
DS(on)1
= 13 m
MAX. (V
GS
= 10
V, I
D
= 25
A)
R
DS(on)2
= 20 m
MAX. (V
GS
= 4.0
V, I
D
= 25
A)
Low C
iss
: C
iss
= 2400
pF TYP.
Built-in gate protection diode
Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
60
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS(AC)
20
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS(DC)
+20,
-
10
V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
50
A
Drain Current (Pulse)
Note1
I
D(pulse)
200
A
Total Power Dissipation (T
C
= 25C)
P
T
30
W
Total Power Dissipation (T
A
= 25C)
P
T
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note2
I
AS
25
A
Single Avalanche Energy
Note2
E
AS
62.5
mJ
Notes 1. PW
10
s, Duty cycle
1%
2. Starting T
ch
= 25C, V
DD
= 30 V, R
G
= 25
,
V
GS
= 20
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3059
Isolated TO-220
(Isolated TO-220)
The mark
5
shows major revised points.
Data Sheet D13098EJ3V0DS
2
2SK3059
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Drain Current
I
DSS
V
DS
= 60
V, V
GS
= 0
V
10
A
Gate Leakage Current
I
GSS
V
GS
=
20
V, V
DS
= 0
V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1
mA
1.0
1.5
2.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 25 A
15
45
S
R
DS(on)1
V
GS
= 10
V, I
D
= 25
A
11
13
m
Drain to Source On-state Resistance
R
DS(on)2
V
GS
= 4.0
V, I
D
= 25
A
16
20
m
Input Capacitance
C
iss
2400
pF
Output Capacitance
C
oss
700
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 10
V
V
GS
= 0
V
f = 1
MHz
280
pF
Turn-on Delay Time
t
d(on)
30
ns
Rise Time
t
r
420
ns
Turn-off Delay Time
t
d(off)
140
ns
Fall Time
t
f
I
D
= 25
A
V
GS(on)
= 10
V
V
DD
= 30
V
R
G
= 10
380
ns
Total Gate Charge
Q
G
50
nC
Gate to Source Charge
Q
GS
7.5
nC
Gate to Drain Charge
Q
GD
I
D
= 50
A
V
DD
= 48
V
V
GS
= 10
V
17
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 50
A, V
GS
= 0
V
1.0
V
Reverse Recovery Time
t
rr
55
ns
Reverse Recovery Charge
Q
rr
I
F
= 50
A, V
GS
= 0
V
di/dt = 100
A
/
s
75
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
= 20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
(on)
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet D13098EJ3V0DS
3
2SK3059
TYPICAL CHARACTERISTICS (T
A
= 25C)
5
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature -
C
dT - Percentage of Rated Power - %
0
25
50
75
100 125 150 175 200
20
40
60
80
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature -
C
P
T
- Total Power Dissipation - W
0
25
50
75
100 125 150 175 200
70
60
50
40
30
20
10
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drain Current - A
V
DS
- Drain to Source Voltage - V
1
10
100
0.1
1
10
T
C
= 25C
Single Pulse
0.1
100
1000
I
D(pulse)
P
W
= 10
s
100
s
1 ms
10
ms
100
ms
Po
wer Dissipation
Limited
DC
R
DS(on)
Limited
I
D(DC)
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance -
C/
W
10
0.001
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
10
100
R
th(ch-C)
= 4.17C/W
R
th(ch-A)
= 62.5C/W
Single Pulse
T
C
= 25C/W
Data Sheet D13098EJ3V0DS
4
2SK3059
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
0.1
1
10
100
0
1
2
3
4
5
Pulsed
V
DS
= 10 V
T
A
= 125C
75C
25C
-
25C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0
1.0
1.5
2.0
200
250
0.5
Pulsed
V
GS
= 10 V
V
GS
= 4.0 V
150
100
50
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
|
y
fs
| - Forward Transfer Admittance - S
V
DS
= 10 V
Pulsed
0.1
1.0
1
10
100
10
100
0.1
T
ch
=
-
25C
25C
75C
125C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - m
0
40
20
60
15
10
5
I
D
= 25 A
Pulsed
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
50
1
0.1
75
10
100
1000
0
25
Pulsed
V
GS
= 10 V
V
GS
= 4.0 V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
-
50
0
50
100
150
0
1.0
2.0
1.5
0.5
Data Sheet D13098EJ3V0DS
5
2SK3059
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance -
m
0
-
50
10
0
50
100
150
I
D
= 25 A
20
40
30
V
GS
= 4.0 V
10 V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
I
SD
- Diode Forward Current - A
0
1.5
V
SD
- Source to Drain Voltage - V
0.5
00.1
0.1
1
10
100
1000
Pulsed
V
GS
= 10 V
V
GS
= 0 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
10
0.1
100
1000
10000
1
10
100
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
0.1
10
100
1000
10000
1
10
100
V
DD
= 30 V
V
GS
= 10 V
R
G
= 10
t
d(off)
t
d(on)
t
r
t
f
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A /
V
GS
= 0 V
s
1
0.1
10
1
10
100
1000
100
V
GS
- Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
20
40
60
80
20
40
60
80
14
12
10
8
6
4
2
0
I
D
= 50 A
V
DS
V
GS
V
DD
= 48 V
30 V
12 V
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