1998,1999, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3110
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D13333EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP (K)
Printed in Japan
DATA SHEET
The mark
5
shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3110 is N channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
and designed for high voltage applications such as DC/DC
converter, actuator driver.
FEATURES
Gate voltage rating
30 V
Low on-state resistance
R
DS(on)
= 180 m
MAX. (V
GS
= 10 V, I
D
= 7.0 A)
Low input capacitance
C
iss
= 1000 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
Built-in gate protection diode
Avalanche capability rated
Isolated TO-220 package
ABSOLUTE MAXIMUM RATING (T
A
= 25
C
)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
200
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
30
V
Drain Current(DC) (T
C
= 25C)
I
D(DC)
14
A
Drain Current(pulse)
Note1
I
D(pulse)
42
A
Total Power Dissipation (T
A
= 25C)
P
T1
2.0
W
Total Power Dissipation (T
C
= 25C)
P
T2
35
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
-
55 to +150
C
Single Avalanche Current
Note2
I
AS
14
A
Single Avalanche Energy
Note2
E
AS
98
mJ
Note1. PW
10
s, Duty Cycle
1 %
2. Starting T
ch
= 25C, V
DD
= 100 V, R
G
= 25
, V
GS
= 20 V
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3110
Isolated TO-220
Data Sheet D13333EJ1V0DS00
2
2SK3110
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Drain Leakage Current
I
DSS
V
DS
= 200 V, V
GS
= 0 V
100
A
Gate Leakage Current
I
GSS
V
GS
=
30 V, V
DS
= 0 V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
2.5
4.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 7.0 A
3.0
S
Drain to Source On-state Resistance R
DS(on)
V
GS
= 10 V, I
D
= 7.0 A
120
180
m
Input Capacitance
C
iss
V
DS
= 10 V
1000
pF
Output Capacitance
C
oss
V
GS
= 0 V
300
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
150
pF
Turn-on Delay Time
t
d(on)
V
DD
= 100 V, I
D
= 7.0 A
25
ns
Rise Time
t
r
V
GS(on)
= 10 V
70
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
80
ns
Fall Time
t
f
40
ns
Total Gate Charge
Q
G
V
DD
= 160 V
40
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
7
nC
Gate to Drain Charge
Q
GD
I
D
= 14 A
25
nC
Diode Forward Voltage
V
F(S-D)
I
F
= 14 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 14 A, V
GS
= 0 V
300
ns
Reverse Recovery Charge
Q
rr
di/dt = 50 A/
s
1.5
C
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
R
G
= 10
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1
s
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
I
D
10 %
0
0
90 %
90 %
90 %
V
GS(on)
I
D
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10 %
10 %
Data Sheet D13333EJ1V0DS00
3
2SK3110
TYPICAL CHARACTERISTICS (T
A
= 25C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
-
Drain to Source Voltage - V
I
D
- Drain Current - A
50
45
40
35
30
25
20
15
10
5
0
Pulsed
0
2
4
6
8
10
V
GS
= 30 V
V
GS
= 10 V
FORWARD TRANSFER CHARACTERISTICS
V
GS
-
Gate to Source Voltage - V
I
D
- Drain Current - A
100
10
1
0.1
0.01
0.001
Pulsed
0
V
DS
= 10 V
1
2
3
4
5
6
7
8
9 10 11 12
T
ch
= 125C
75C
25C
-25C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
-
50
50
100
0
150
5.0
4.5
4.0
3.5
3.0
2.5
2.0
-
25
25
75
125
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
|y
fs
| - Forward Transfer Admittance - m
0.1
100
10
1
0.1
0.01
1
100
0.01
10
V
DS
=10 V
Pulsed
T
ch
= -25C
T
ch
= 25C
T
ch
= 75C
T
ch
= 125C
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - m
500
450
400
350
300
250
200
150
100
50
0
0
2
4
6
8
10 12
14
16
18
20
I
D
=
14
A
7.0 A
2.8 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
1
10
100
Pulsed
300
250
200
150
100
50
0
0.1
V
GS
= 10 V
V
GS
= 30 V
5
Data Sheet D13333EJ1V0DS00
4
2SK3110
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance - m
350
300
250
200
150
100
50
0
-
50
50
100
0
150
-
25
25
75
125
I
D
= 14 A
I
D
= 7.0 A
V
GS
= 10 V
Pulsed
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
0.0
100
10
1
0.1
0.4
1.0
1.2
Pulsed
0.2
0.6
0.8
1.4
1.6
V
GS
= 10 V
V
GS
= 0 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
0.1
10
100
1000
1
10
100
V
GS
= 0 V
f = 1 MHz
10000
1000
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
0.1
1 000
100
10
1
1
10
100
V
DD
= 100 V
V
GS
= 10 V
R
G
= 10
t
r
t
f
t
d(off)
t
d(on)
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
D
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
1
0.1
10
1
10
100
1 000
100
di/dt = 50A /
V
GS
= 0 V
s
V
GS
- Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
10
20
30
40
50
200
150
100
50
0
2
4
6
0
I
D
= 14 A
V
DD
= 160 V
100 V
40 V
V
DD
= 160 V
100 V
40 V
8
10
12
60
14
16
Data Sheet D13333EJ1V0DS00
5
2SK3110
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature - C
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
140
160
20
40
60
80
100
0
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
20
40
60
80
100
120
140
160
40
30
20
10
0
FORWARD BIAS SAFE OPERATING AREA
V
DS -
Drain to Source Voltage - V
I
D
- Drain Current - A
0.1
1
1
10
100
10
100
1000
T
C
= 25 C
Single Pulse
R
DS(on)
Limited
100 ms
Power Dissipation Limited
3 ms
10 ms
1 ms
100
s
PW = 10
s
I
D(pulse)
I
D(DC)
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th
(t) - Transient Thermal Resistance - C/
W
10
0.001
0.01
0.1
1
100
1 000
1 m
10 m
100 m
1
10
100
1 000
Single Pulse
10
100
R
th(ch-A)
= 62.5C/W
R
th(ch-C)
= 3.57C/W
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