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MOS FIELD EFFECT TRANSISTOR
2SK3113
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D13336EJ3V0DS00 (3rd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
1998, 2001
The mark
shows major revised points.
DESCRIPTION
The 2SK3113 is N-channel DMOS FET device that features
a low gate charge and excellent switching characteristic, and
designed for high voltage applications such as switching
power supply, AC adapter.
FEATURES
Low on-state resistance
R
DS(on)
= 4.4
MAX. (V
GS
= 10
V, I
D
= 1.0
A)
Low gate charge
Q
G
= 9 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 2.0 A)
Gate voltage rating 30 V
Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
600
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
30 V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
2.0 A
Drain Current (pulse)
Note1
I
D(pulse)
8.0 A
Total Power Dissipation (T
C
= 25C)
P
T1
20 W
Total Power Dissipation (T
A
= 25C)
Note2
P
T2
1.0 W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note3
I
AS
2.0 A
Single Avalanche Energy
Note3
E
AS
2.7
mJ
Notes 1. PW
10
s, Duty Cycle
1%
2.
Mounted on glass epoxy board of 40 mm x 40 mm x 1.6 mm
3.
Starting T
ch
= 25C, V
DD
= 150 V
,
R
G
= 25
,
V
GS
= 20
0 V
(TO-251)
(TO-252)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3113 TO-251
(MP-3)
2SK3113-Z TO-252
(MP-3Z)
Data Sheet D13336EJ3V0DS
2
2SK3113
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS SYMBOL
TEST
CONDITIONS MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 600
V, V
GS
= 0
V
100
A
Gate Leakage Current
I
GSS
V
GS
= 30
V, V
DS
= 0
V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1
mA 2.5
3.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10
V, I
D
= 1.0
A 0.5
S
Drain to Source On-state Resistance
R
DS(on)
V
GS
= 10
V, I
D
= 1.0
A
3.3
4.4
Input Capacitance
C
iss
V
DS
= 10
V
290
pF
Output Capacitance
C
oss
V
GS
= 0
V
60
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
5
pF
Turn-on Delay Time
t
d(on)
V
DD
= 150
V, I
D
= 1.0
A
7
ns
Rise Time
t
r
V
GS
= 10
V
2
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
, R
L
= 10
22 ns
Fall Time
t
f
9 ns
Total Gate Charge
Q
G
V
DD
= 450
V
9
nC
Gate to Source Charge
Q
GS
V
GS
= 10
V
2.4 nC
Gate to Drain Charge
Q
GD
I
D
= 2.0
A
2
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 2.0
A, V
GS
= 0
V
0.9 V
Reverse Recovery Time
t
rr
I
F
= 2.0
A, V
GS
= 0
V
0.9
s
Reverse Recovery Charge
Q
rr
di/dt = 50
A/
s
2.0
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
= 20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet D13336EJ3V0DS
3
2SK3113
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
ch
- Channel Temperature - C
dT - Percentage of Rated Power - %
0
40
20
60
100
140
80
120
160
100
80
60
40
20
0
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
0
80
20
40
60
100
140
120
160
40
30
20
10
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
Mounted on glass epoxy board
of 40 mm x 40 mm x 1.6 mm
5
15
25
35
FORWARD BIAS SAFE OPERATING AREA
10
100
1000
I
D
- Drain Current - A
1
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
Po
wer Dissipation Limited
100
s
10
ms
1
ms
100
ms
PW
=
10
s
I
D(pulse)
I
D(DC)
DC
T
C
= 25C, Single pulse
Mounted on glass epoxy board
of 40 mm x 40 mm x 1.6 mm
R
DS(on)
Limited (at V
GS
= 20 V)
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance -
C/
W
100 m
1
10
100
1000
10 m
1 m
100
10
100
10
1
0.1
0.01
R
th(ch-A)
= 125C/W
R
th(ch-C)
= 6.25C/W
Single pulse
Mounted on glass epoxy board
of 40 mm x 40 mm x 1.6 mm
Data Sheet D13336EJ3V0DS
4
2SK3113
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
10
40
20
30
1
3
4
2
0
0
5
6 V
V
GS
= 10 V
8 V
Pulsed
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
15
10
5
0
0
100
10
1.0
0.1
V
DS
= 10 V
Pulsed
T
ch
= 125C
75C
T
ch
= 25C
-25C
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate Cut-off Voltage - V
-50
0
50
100
150
5.0
4.0
3.0
2.0
1.0
0
V
DS
= 10 V
I
D
= 1 mA
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
0.1
1.0
10
0.01
0.1
1
10
100
V
DS
= 10 V
Pulsed
T
ch
=
-25C
25C
75C
125C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
5
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance -
1
0
5
15
0
Pulsed
I
D
= 2.0 A
1.0 A
2
3
4
6
7
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
0.1
1
10
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance -
0
V
GS
= 10 V
20 V
Pulsed
1
2
3
4
5
6
7
Data Sheet D13336EJ3V0DS
5
2SK3113
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
150
R
DS(on)
- Drain to Source On-state Resistance -
2
0
0
100
-50
T
ch
- Channel Temperature - C
3
1
V
GS
= 10 V
4
1 A
6
7
5
8
9
I
D
= 2 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
F(S-D)
- Source to Drain Voltage - V
I
F
- Diode Forward Current - A
1.5
1.0
0.5
0
100
10
1.0
0.1
Pulsed
0 V
V
GS
= 10 V
100
10
1
0.1
10000
1000
100
10
1
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C
iss
, C
oss
, C
rss
- Capacitance - pF
C
iss
C
oss
C
rss
V
GS
= 0 V
f = 1 MHz
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
0.1
1
10
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
100
10
1
0.1
V
DD
=
150
V
V
GS
= 10
V
R
G
=
10
t
d(off)
t
d(on)
t
f
t
r
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1.0
10
100
t
rr
- Reverse Recovery Time - ns
0.1
I
D
- Drain Current - A
10000
1000
100
10
di/dt = 50 A/
s
V
GS
= 0 V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
0
8
4
12
16
600
400
200
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
16
14
12
10
8
6
4
2
0
V
DS
I
D
= 2.0 A
V
GS
800
V
DD
= 450 V
300 V
150 V
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