MOS FIELD EFFECT TRANSISTOR
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1998, 2001
2SK3115
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D13338EJ2V0DS00 (2nd edition)
Date Published January 2001 NS CP (K)
Printed in Japan
DATA SHEET
The mark
5
shows major revised points.
DESCRIPTION
The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, and
designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
Low gate charge
Q
G
= 26 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 6.0 A)
Gate voltage rating
30 V
Low on-state resistance
R
DS(on)
= 1.2
MAX. (V
GS
= 10 V, I
D
= 3.0 A)
Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
600
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
30
V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
6.0
A
Drain Current (pulse)
Note1
I
D(pulse)
24
A
Total Power Dissipation (T
A
= 25C)
P
T1
2.0
W
Total Power Dissipation (T
C
= 25C)
P
T2
35
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
-
55 to +150
C
Single Avalanche Current
Note2
I
AS
6.0
A
Single Avalanche Energy
Note2
E
AS
24
mJ
Notes 1. PW
10
s, Duty Cycle
1%
2. Starting T
ch
= 25C, V
DD
= 150 V, R
G
= 25
, V
GS
= 20
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3115
Isolated TO-220
(Isolated TO-220)
5
Data Sheet D13338EJ2V0DS
2
2SK3115
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 600 V, V
GS
= 0 V
100
A
Gate Leakage Current
I
GSS
V
GS
= 30 V, V
DS
= 0 V
100
nA
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
2.5
3.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 3.0 A
2.0
S
Drain to Source On-state Resistance
R
DS(on)
V
GS
= 10 V, I
D
= 3.0 A
0.9
1.2
Input Capacitance
C
iss
V
DS
= 10 V
1100
pF
Output Capacitance
C
oss
V
GS
= 0 V
200
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
20
pF
Turn-on Delay Time
t
d(on)
V
DD
= 150 V, I
D
= 3.0 A
18
ns
Rise Time
t
r
V
GS(on)
= 10 V
12
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
, R
L
= 50
50
ns
Fall Time
t
f
15
ns
Total Gate Charge
Q
G
V
DD
= 450 V
26
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
6
nC
Gate to Drain Charge
Q
GD
I
D
= 6.0 A
10
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 6.0 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 6.0 A, V
GS
= 0 V
1.4
s
Reverse Recovery Charge
Q
rr
di/dt = 50 A/
s
6.5
C
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1
s
Duty Cycle
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS(on)
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
5
Data Sheet D13338EJ2V0DS
3
2SK3115
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
ch
- Channel Temperature - C
dT - Percentage of Rated Power - %
0
40
20
60
100
140
80
120
160
100
80
60
40
20
0
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
80
20
40
60
100
140
120
160
80
60
40
20
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
FORWARD BIAS SAFE OPERATING AREA
10
100
1000
I
D
- Drain Current - A
1
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
Po
wer Dissipation Limited
100
s
10
ms
1 ms
100
ms
PW
= 10
s
R
DS(on)
Limited
I
D(pulse)
I
D(DC)
T
C
= 25C
Single Pulse
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th
(t)
- Transient Thermal Resistance -
C/
W
100 m
1
10
100
1000
10 m
1 m
100
10
100
10
1
0.1
0.01
R
th(ch-A)
= 62.5C/W
R
th(ch-C)
= 3.57C/W
5
Data Sheet D13338EJ2V0DS
4
2SK3115
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
10
40
20
30
5
15
20
10
0
25
6 V
V
GS
= 10 V
8 V
Pulsed
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
15
10
5
0
100
10
1.0
0.1
V
DS
= 10 V
Pulsed
T
ch
= 125C
75C
T
ch
= 25C
-
25C
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate Cut-off Voltage - V
-
50
0
50
100
150
5.0
4.0
3.0
2.0
1.0
0
V
DS
= 10 V
I
D
= 1mA
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1.0
10
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
10
0.1
1.0
0.1
V
DS
= 10 V
Pulsed
T
ch
=
-
25C
25C
75C
125C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
8
20
16
2.0
V
GS
- Gate to Source Voltage - V
R
DS (on)
- Drain to Source On-state Resistance -
I
D
= 6.0 A
3.0 A
1.0
0
4
12
Pulsed
0
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1.0
10
100
0.8
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance -
0.4
2.0
0
1.2
1.6
V
GS
= 10 V
20 V
Pulsed
Data Sheet D13338EJ2V0DS
5
2SK3115
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
150
R
DS (on)
- Drain to Source On-state Resistance -
I
D
= 6.0 A
3.0 A
2.0
0
0
100
-
50
T
ch
- Channel Temperature - C
3.0
1.0
V
GS
= 10 V
Pulsed
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
1.5
1.0
0.5
0
100
10
1.0
0.1
Pulsed
0 V
V
GS
= 10 V
1000
100
10
1.0
10000
1000
100
10
1
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C
iss
, C
oss
, C
rss
- Capacitance - pF
C
iss
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
V
GS
=
0
V
f
=
1
MHz
SWITCHING CHARACTERISTICS
0.1
1
10
I
D
- Drain Current - A
td
(on)
, tr, td
(off)
, tf - Switching Time - ns
100
10
1
0.1
V
DD
=
150
V
V
GS
= 10
V
R
G
=
10
t
d(off)
t
d(on)
t
f
t
r
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1.0
10
100
t
rr
- Reverse Recovery Time - ns
0.1
I
D
- Drain Current - A
10000
1000
100
10
di/dt = 50 A/
s
V
GS
= 0 V
Q
g
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
20
10
30
40
600
400
200
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
16
14
12
10
8
6
4
2
0
I
D
= 6 A
V
GS
V
DD
= 450 V
300 V
120 V
V
DS
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