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Электронный компонент: 2SK3296-ZK

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1999, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3296
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No.
D14063EJ2V0DS00 (2nd edition)
Date Published
May 2001 NS CP(K)
Printed in Japan
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3296 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
4.5 V drive available
Low on-state resistance
R
DS(on)1
= 12 m
MAX. (V
GS
= 10 V, I
D
= 18 A)
Low gate charge
Q
G
= 30 nC TYP. (I
D
= 35 A, V
DD
= 16 V, V
GS
= 10 V)
Built-in gate protection diode
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C
)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
20
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
20
V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
35
A
Drain Current (Pulse)
Note
I
D(pulse)
140
A
Total Power Dissipation (T
A
= 25C)
P
T1
1.5
W
Total Power Dissipation (T
C
= 25C)
P
T2
40
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
-55 to +150
C
Note PW
10
s, Duty Cycle 1%
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3296
TO-220AB
2SK3296-S
TO-262
2SK3296-ZK
TO-263(MP-25ZK)
2SK3296-ZJ
TO-263(MP-25ZJ)
The mark shows major revised points.
Data Sheet D14063EJ2V0DS
2
2SK3296
ELECTRICAL CHARACTERISTICS(T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Leakage Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
=
20 V, V
DS
= 0 V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.0
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 18 A
9.0
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 18 A
8.5
12
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 18 A
12
19
m
Input Capacitance
C
iss
V
DS
= 10 V
1300
pF
Output Capacitance
C
oss
V
GS
= 0 V
570
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
300
pF
Turn-on Delay Time
t
d(on)
V
DD
= 10 V , I
D
= 18 A
70
ns
Rise Time
t
r
V
GS(on)
= 10 V
1220
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
100
ns
Fall Time
t
f
180
ns
Total Gate Charge
Q
G
V
DD
= 16 V
30
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
4.5
nC
Gate to Drain Charge
Q
GD
I
D
= 35 A
8.0
nC
Diode Forward Voltage
V
F(S-D)
I
F
= 35 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 35 A, V
GS
= 0 V
35
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
23
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
(on)
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet D14063EJ2V0DS
3
2SK3296
TYPICAL CHARACTERISTICS (T
A
= 25C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0
0
2
3
100
160
120
140
1
Pulsed
V
GS
=10 V
40
20
60
80
7.0 V
4.5 V
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
Pulsed
0
1
2
3
4
5
6
V
DS
= 10 V
10
1
0.1
0.01
0.001
100
1000
T
ch
=
-
50C
-
25C
25C
75C
125C
150C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
1.0
1.5
0.5
2.0
2.5
3.0
-
50
0
50
100
150
0
| y
fs
| - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
Pulsed
V
DS
= 10 V
10
1
100
0.1
0.1
1
10
100
T
ch
=
-
50C
-
25C
25C
75C
150C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - m
0
0
10
5
15
20
30
40
50
Pulsed
I
D
= 28 A
18 A
7 A
10
20
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
10
10
1
20
30
40
50
1000
100
Pulsed
0
V
GS
= 4.5 V
7.0 V
10 V
Data Sheet D14063EJ2V0DS
4
2SK3296
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance - m
0
-
50
5
0
50
100
150
10
20
25
15
7.0 V
10 V
V
GS
= 4.5 V
I
D
= 18 A
Pulsed
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.2
1.4
1
I
SD
- Diode Forward Current - A
0
1.6
V
SD
- Source to Drain Voltage - V
0.6
0.8
0.4
0.2
Pulsed
0.1
0.01
1
10
100
1000
0 V
4.5 V
V
GS
= 10 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
0.1
100
1000
10000
1
10
100
V
GS
= 0 V
f = 1 MHz
C
oss
C
rss
C
iss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10
5
1
0.1
100
10000
1000
10
100
t
f
t
r
t
d(on)
t
d(off)
V
DD
= 10 V
V
GS
= 10 V
R
G
= 10
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
SD
- Diode Forward Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/ s
V
GS
= 0 V
1
0.1
10
1
10
100
1000
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
0
10
20
30
40
10
5
15
20
4
0
8
V
DD
= 16 V
10 V
4 V
V
DS
16
12
I
D
= 35 A
V
GS
Data Sheet D14063EJ2V0DS
5
2SK3296
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
ch
- Channel Temperature - C
dT - Percentage of Rated Power - %
0
40
20
60
100
140
80
120
160
0
20
40
60
80
100
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
0
80
20
40
60
100
140
120
160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
10
20
30
40
50
1
10
100
0.1
1000
100
10
1
T
C
= 25
C
Single Pulse
I
D(pulse)
I
D(DC)
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
FORWARD BIAS SAFE OPERATING AREA
10
0 s
1ms
3m
s
300 s
PW = 10 s
10ms
Power Dissipation Limited
R
DS(on)
Lim
ited
(
@V
GS
= 10V)
DC
PW - Pulse Width - sec
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance -
C
/W
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
Single Pulse
10
100
R
th(ch-C)
= 3.13C/W
R
th(ch-A)
= 83.3C/W