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1998,2000
MOS FIELD EFFECT TRANSISTOR
2SK3305
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
D14003EJ1V0DS00 (1st edition)
Date Published
March 2000 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3305 is N-Channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
Low gate charge:
Q
G
= 13 nC TYP. (V
DD
= 400
V, V
GS
= 10
V, I
D
= 5.0
A)
Gate voltage rating:
30
V
Low on-state resistance
R
DS(on)
= 1.5
MAX. (V
GS
= 10 V, I
D
= 2.5 A)
Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
500
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS(AC)
30
V
Drain Current (DC)
I
D(DC)
5
A
Drain Current (pulse)
Note1
I
D(pulse)
20
A
Total Power Dissipation (T
C
= 25C)
P
T
75
W
Total Power Dissipation (T
A
= 25C)
P
T
1.5
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note2
I
AS
5.0
A
Single Avalanche Energy
Note2
E
AS
125
mJ
Notes 1. PW
10
s, Duty Cycle
1 %
2. Starting T
ch
= 25
C, V
DD
= 150
V, R
G
= 25
, V
GS
= 20
V
0
V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3305
TO-220AB
2SK3305-S
TO-262
2SK3305-ZJ
TO-263
(TO-220AB)
(TO-262)
(TO-263)
Data Sheet D14003EJ1V0DS00
2
2SK3305
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Leakage Current
I
DSS
V
DS
= 500 V, V
GS
= 0 V
100
A
Gate to Source Leakage Current
I
GSS
V
GS
=
30 V, V
DS
= 0 V
100
nA
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
2.5
3.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 2.5 A
1.0
3.0
S
Drain to Source On-state Resistance
R
DS(on)
V
GS
= 10 V, I
D
= 2.5 A
1.3
1.5
Input Capacitance
C
iss
700
pF
Output Capacitance
C
oss
115
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
6
pF
Turn-on Delay Time
t
d(on)
16
ns
Rise Time
t
r
3
ns
Turn-off Delay Time
t
d(off)
33
ns
Fall Time
t
f
V
DD
= 150 V, I
D
= 2.5 A, V
GS(on)
= 10 V,
R
G
= 10
,
R
L
= 60
5.5
ns
Total Gate Charge
Q
G
13
nC
Gate to Source Charge
Q
GS
4
nC
Gate to Drain Charge
Q
GD
V
DD
= 400 V, V
GS
= 10 V, I
D
= 5.0 A
4.5
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 5.0 A, V
GS
= 0 V
0.9
V
Reverse Recovery Time
t
rr
0.6
s
Reverse Recovery Charge
Q
rr
I
F
= 5.0 A, V
GS
= 0 V, di/dt = 50 A
/
s
3.3
C
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1
s
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
I
D
10 %
0
0
90 %
90 %
90 %
V
GS(on)
I
D
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10 %
10 %
Data Sheet D14003EJ1V0DS00
3
2SK3305
TYPICAL CHARACTERISTICS (T
A
= 25C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
40
60
100
120
140
160
20
40
60
80
100
T
c
- Case Temperature - C
dT - Percentage of Rated Power - %
0
20
80
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
20
40
60
80
100
120
140
160
T
c
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
100
80
60
40
20
Figure3. FORWARD BIAS SAFE OPERATING AREA
100
10
0.1
10
100
1000
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
1
1
Power Dissipation Limited
10 ms
R
DS (on)
Limited
I
D (DC)
I
D (pulse)
100
s
T
c
= 25 C
Single Pulse
PW = 10
s
1ms
Figure4. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0
4
8
12
16
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
10
8
6
2
Pulsed
V
GS
= 20 V
4
10 V
8.0 V
V
GS
= 6.0 V
Figure5. DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
0
V
GS
- Gate to Source Voltage - V
Pulsed
1000
100
0.001
0.01
I
D
- Drain Current - A
0.1
1
10
5
10
15
T
A
= 25 C
25 C
75 C
125 C
Data Sheet D14003EJ1V0DS00
4
2SK3305
Figure6. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
1
0.1
0.0001 0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance - C/W
T
c
= 25 C
Single Pulse
0.01
R
th(ch-C)
= 1.67 C/W
R
th(ch-A)
= 62.5 C/W
Figure7. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
1
0.1
1
10
Iy
fs
I - Forward Transfer Admittance - S
I
D
- Drain Current - A
0.01
0.01
100
0.1
T
A
= 25 C
25 C
75 C
125 C
V
DS
= 10 V
Pulsed
Figure8. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
15
20
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance -
Pulsed
25
0
5
0.0
I
D
= 2.5 A
3.0
4.0
2.0
1.0
I
D
= 5.0 A
R
DS(on)
- Drain to Source On-state Resistance -
3.0
2.0
0
Figure9. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
0.1
10
I
D
- Drain Current - A
1
Pulsed
1.0
100
V
GS(off)
- Gate to Source Cut-off Voltage - V
1.0
0.0
50
0
50
100
150
200
T
ch
- Channel Temperature - C
Figure10. GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
2.0
3.0
4.0
V
DS
= 10 V
I
D
= 1 mA
Data Sheet D14003EJ1V0DS00
5
2SK3305
Figure11. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
3.0
2.0
1.0
0.0
50
0
50
100
150
V
GS
= 10 V
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance -
I
D
= 2.5 A
I
D
= 5.0 A
Figure12. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
10
1
0.5
0.1
1.5
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
Pulsed
1.0
0.0
0.01
100
V
GS
= 0 V
V
GS
= 10 V
Figure13. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1000
10
100
1
100
1000
V
DS
- Drain to Source Voltage - V
V
GS
= 0 V
f = 1.0 MHz
10
10000
C
iss
0.1
1
C
oss
C
iss
, C
oss
, C
rss
- Capacitance - pF
C
rss
Figure14. SWITCHING CHARACTERISTICS
100
10
1
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
0.1
100
I
D
- Drain Current - A
V
DD
= 150 V
V
GS
= 10 V
R
G
= 10
t
f
t
d(off)
t
d(on)
1
10
0.1
t
r
Figure15. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
0
0.1
10
100
t
rr
- Reverse Recovery Time - ns
I
F
- Drain Current - A
di/dt = 100 A/
s
V
GS
= 0 V
1
200
1000
1200
1400
1600
1800
2000
800
600
400
4
2
8
10
6
12
14
400
500
600
700
800
300
200
100
V
DS
V
GS
I
D
= 5.0 A
V
DS
- Drain to Source Voltage - V
Q
G
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
Figure16. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
14
12
10
8
6
4
2
V
DD
= 400 V
250 V
125 V
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