1999
MOS FIELD EFFECT TRANSISTOR
2SK3356
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
D14133EJ1V0DS00 (1st edition)
Date Published
August 1999 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark
5
shows major revised points.
DESCRIPTION
The 2SK3356 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance:
R
DS(on)1
= 8.0
m
MAX. (V
GS
= 10
V, I
D
= 38
A)
R
DS(on)2
= 12
m
MAX. (V
GS
= 4
V, I
D
= 38
A)
Low C
iss
: C
iss
= 6300
pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage
V
DSS
60
V
Gate to Source Voltage
V
GSS(AC)
20
V
Drain Current (DC)
I
D(DC)
75
A
Drain Current (pulse)
Note1
I
D(pulse)
300
A
Total Power Dissipation (T
C
= 25C)
P
T
130
W
Total Power Dissipation (T
A
= 25C)
P
T
3.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note2
I
AS
55
A
Single Avalanche Energy
Note2
E
AS
302
mJ
Notes 1. PW
10
s, Duty cycle
1 %
2. Starting T
ch
= 25 C, R
G
= 25
,
V
GS
= 20 V
0 V
THERMAL RESISTANCE
Channel to Case
Rth(ch-C)
0.93
C/W
Channel to Ambient
Rth(ch-A)
41.7
C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3356
TO-3P
5
5
5
5
5
5
5
Data Sheet D14133EJ1V0DS00
2
2SK3356
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10
V, I
D
= 38
A
6.3
8.0
m
R
DS(on)2
V
GS
= 4
V, I
D
= 38
A
8.0
12
m
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1
mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10
V, I
D
= 38
A
35
57
S
Drain Leakage Current
I
DSS
V
DS
= 60
V, V
GS
= 0
V
10
A
Gate to Source Leakage Current
I
GSS
V
GS
= 20
V, V
DS
= 0
V
10
A
Input Capacitance
C
iss
V
DS
= 10
V, V
GS
= 0
V, f = 1
MHz
6300
pF
Output Capacitance
C
oss
1000
pF
Reverse Transfer Capacitance
C
rss
490
pF
Turn-on Delay Time
t
d(on)
I
D
= 38
A, V
GS(on)
= 10
V, V
DD
= 30
V,
90
ns
Rise Time
t
r
R
G
= 10
1100
ns
Turn-off Delay Time
t
d(off)
300
ns
Fall Time
t
f
400
ns
Total Gate Charge
Q
G
I
D
= 75
A , V
DD
= 48
V, V
GS
= 10
V
106
nC
Gate to Source Charge
Q
GS
20
nC
Gate to Drain Charge
Q
GD
30
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 75
A, V
GS
= 0
V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 75
A, V
GS
= 0
V,
55
ns
Reverse Recovery Charge
Q
rr
di/dt = 100
A/
s
100
nC
5
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
R
G
= 10
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1
s
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
I
D
10 %
0
0
90 %
90 %
90 %
V
GS(on)
I
D
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10 %
10 %
Data Sheet D14133EJ1V0DS00
3
2SK3356
PACKAGE DRAWING (Unit: mm)
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
TO-3P (MP-88)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
15.7 MAX.
3.20.2
4.50.2
6.0
1.0
3.00.2
20.00.2
19 MIN.
2.20.2
5.45
5.45
1.00.2
4
4.7 MAX.
1.5
7.0
2.80.1
0.60.1
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
2SK3356
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confirm that this is the latest version.
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M7 98. 8
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