The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2000
MOS FIELD EFFECT TRANSISTOR
2SK3457
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
D14754EJ1V0DS00 (1st edition)
Date Published
June 2002 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3457 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power
supply.
FEATURES
Low gate charge
Q
G
= 24 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 5.0 A)
Gate voltage rating
30
V
Low on-state resistance
R
DS(on)
= 2.2
MAX. (V
GS
= 10 V, I
D
= 3.0 A)
Avalanche capability ratings
Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
800
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
30
V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
5.0
A
Drain Current (pulse)
Note1
I
D(pulse)
20
A
Total Power Dissipation (T
A
= 25C)
P
T1
2.0
W
Total Power Dissipation (T
C
= 25C)
P
T2
50
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note2
I
AS
5.0
A
Single Avalanche Energy
Note2
E
AS
73.8
mJ
Notes 1. PW
10
s, Duty Cycle
1%
2. Starting T
ch
= 25C, V
DD
= 150
V, R
G
= 25
, V
GS
= 20
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3457
Isolated TO-220
Data Sheet D14754EJ1V0DS
2
2SK3457
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 800 V, V
GS
= 0 V
100
A
Gate Leakage Current
I
GSS
V
GS
=
30 V, V
DS
= 0 V
100
nA
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
2.5
3.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 3.0 A
2.0
S
Drain to Source On-state Resistance
R
DS(on)
V
GS
= 10 V, I
D
= 3.0 A
1.8
2.2
Input Capacitance
C
iss
V
DS
= 10 V
1220
pF
Output Capacitance
C
oss
V
GS
= 0 V
170
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
16
pF
Turn-on Delay Time
t
d(on)
V
DD
= 150 V, I
D
= 3.0 A
17
ns
Rise Time
t
r
V
GS
= 10 V
7
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
43
ns
Fall Time
t
f
11
ns
Total Gate Charge
Q
G
V
DD
= 450 V
24
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
5
nC
Gate to Drain Charge
Q
GD
I
D
= 5.0 A
10
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 5.0 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 5.0 A, V
GS
= 0 V
1310
ns
Reverse Recovery Charge
Q
rr
di/dt = 50 A/
s
6.6
C
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
R
G
= 10
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1 s
Duty Cycle
1%
V
GS
Wave Form
I
D
Wave Form
V
GS
I
D
10%
0
0
90%
90%
90%
V
GS
I
D
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet D14754EJ1V0DS
3
2SK3457
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - P
e
rc
ent
age of
Rat
ed P
o
w
e
r - %
0
20
40
60
80
100
0
20
40
60
80
100 120 140 160
P
T
- Tot
a
l
P
o
w
e
r Di
s
s
i
pat
i
on - W
0
10
20
30
40
50
60
0
20
40
60
80
100
120
140
160
T
C
- Case Temperature -
C
T
C
- Case Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drai
n Current
- A
T
C
= 25C
Single Pulse
R
DS(on)
Limited
I
D(DC)
I
D(pulse)
100
s
1 ms
10 ms
100 ms
DC
Power Dissipation Limited
300 ms
0.1
0.01
1
10
100
100
1000
1
10
PW = 10
s
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(
t
)
- Trans
i
ent
Therm
a
l
Res
i
s
t
anc
e -
C/
W
100
1000
0.1
0.01
1
10
100 m
1
10
100
1000
10
100
1 m
10 m
R
th(ch-C)
= 2.5C/W
R
th(ch-A)
= 62.5C/W
Single Pulse
PW - Pulse Width - s
Data Sheet D14754EJ1V0DS
4
2SK3457
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drai
n Current
- A
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
V
GS
= 10 V
I
D
- Drai
n Current
- A
0.001
0.01
0.1
1
10
100
1000
0
5
10
15
Pulsed
V
DS
= 10 V
T
A
=
-
50C
-
25C
25C
75C
125C
150C
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(
o
ff)
Gat
e
Cut
-
of
f
V
o
l
t
age - V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-50
0
50
100
150
|
y
fs
| - Forw
ard Trans
f
e
r A
d
m
i
t
t
anc
e - S
0.1
1
10
0.1
1
10
100
T
A
=
-
50C
-
25C
25C
75C
125C
150C
T
ch
- Channel Temperature -
C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.1
1
10
100
V
GS
= 10 V
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
0
5
10
15
20
25
I
D
= 6.0 A
3.0 A
1.2 A
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e -
I
D
- Drain Current - A
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e -
V
GS
- Gate to Source Voltage - V
Data Sheet D14754EJ1V0DS
5
2SK3457
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-50
0
50
100
150
I
D
= 6.0 A
3.0 A
T
ch
- Channel Temperature -
C
C
is
s
, C
os
s
, C
rs
s
- Capac
i
t
anc
e - pF
1
10
100
1000
10000
0.1
1
10
100
1000
C
rss
C
oss
C
iss
V
GS
= 0 V
f = 1 MHz
V
DS
- Drain to Source Voltage - V
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e -
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
on)
, t
r
, t
d(
of
f
)
, t
f
- S
w
i
t
c
h
i
ng Ti
m
e
- ns
1
10
100
1000
0.1
1
10
100
t
d(on)
t
f
t
r
t
d(off)
I
D
- Drain Current - A
V
DS
- Drai
n t
o
S
ourc
e
V
o
l
t
age - V
0
100
200
300
400
500
600
700
0
5
10
15
20
25
0
2
4
6
8
10
12
14
V
DD
= 450 V
300 V
150 V
V
GS
I
D
= 5.0 A
V
DS
Q
G
- Gate Charge - nC
V
GS
- Gat
e
t
o
S
ourc
e
V
o
l
t
age - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs. DRAIN CURRENT
I
SD
- Di
ode Forw
ard Current
- A
0.01
0.1
1
10
100
0
0.5
1
1.5
0 V
V
GS
= 10 V
V
SD
- Source to Drain Voltage - V
t
rr
- Revers
e Rec
o
very T
i
m
e
- ns
10
100
1000
10000
0.1
1
10
100
di/dt = 50 A/
s
V
GS
= 0 V
I
F
- Drain Current - A
Data Sheet D14754EJ1V0DS
6
2SK3457
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
I
AS
- S
i
ngl
e A
v
al
anc
he Current
- A
0.1
1
10
100
V
DD
= 150 V
R
G
= 25
V
GS
= 20
0 V
Starting T
ch
= 25C
I
AS
= 5.0 A
E
AS
= 73.8 mJ
E
nergy Derat
i
ng Fac
t
or - %
0
20
40
60
80
100
25
50
75
100
125
150
V
DD
= 150 V
R
G
= 25
V
GS
= 20
0 V
Starting T
ch
= 25C
I
AS
5.0 A
L - Inductive Load - H
Starting T
ch
- Starting Channel Temperature - C
100
1 m
10 m
100 m
Data Sheet D14754EJ1V0DS
7
2SK3457
PACKAGE DRAWING (Unit: mm)
Isolated TO-220 (MP-45F)
1. Gate
2. Drain
3. Source
10.00.3
3.20.2
2.70.2
1.30.2
0.70.1
2.54 TYP.
2.54 TYP.
1.50.2
1 2 3
40.2
13.5 MIN.
12.00.2
15.00.3
30.1
4.50.2
2.50.1
0.650.1
EQUIVALENT CIRCUIT
Source (S)
Body
Diode
Gate (G)
Drain (D)
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible,
and quickly dissipate it once, when it has occurred.
2SK3457
M8E 00. 4
The information in this document is current as of June, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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