2001
MOS FIELD EFFECT TRANSISTOR
2SK3467
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No.
D14991EJ1V0DS00 (1st edition)
Date Published
March 2001 NS CP(K)
Printed in Japan
DATA SHEET
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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3467 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
4.5 V drive available
Low on-state resistance
R
DS(on)1
= 6.0 m
MAX. (V
GS
= 10 V, I
D
= 40 A)
Low gate charge
Q
G
= 55 nC TYP. (I
D
= 80 A, V
DD
= 16 V, V
GS
= 10 V)
Built-in gate protection diode
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C
)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
20
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
20
V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
80
A
Drain Current (Pulse)
Note
I
D(pulse)
320
A
Total Power Dissipation (T
A
= 25C)
P
T1
1.5
W
Total Power Dissipation (T
C
= 25C)
P
T2
76
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
-
55 to +150
C
Note PW
10
s, Duty Cycle
1%
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3467
TO-220AB
2SK3467-ZK
TO-263(MP-25ZK)
(TO-220AB)
(TO-263)
Data Sheet D14991EJ1V0DS
2
2SK3467
ELECTRICAL CHARACTERISTICS(T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
=
20 V, V
DS
= 0 V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 40 A
20
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 40 A
4.8
6.0
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 40 A
6.7
9.5
m
Input Capacitance
C
iss
V
DS
= 10 V
2800
pF
Output Capacitance
C
oss
V
GS
= 0 V
1200
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
600
pF
Turn-on Delay Time
t
d(on)
V
DD
= 10 V , I
D
= 40 A
16
ns
Rise Time
t
r
V
GS(on)
= 10 V
23
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
74
ns
Fall Time
t
f
31
ns
Total Gate Charge
Q
G
V
DD
= 16 V
55
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
9
nC
Gate to Drain Charge
Q
GD
I
D
= 80 A
17
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 80 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 80 A, V
GS
= 0 V
44
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
40
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS
10%
90%
10%
0
V
DS
90%
t
d(on)
t
r
t
d(off)
t
f
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet D14991EJ1V0DS
3
2SK3467
TYPICAL CHARACTERISTICS (T
A
= 25C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0
0
2
3
1
Pulsed
V
GS
=10 V
50
100
150
200
250
300
350
7.0 V
4.5 V
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
Pulsed
1
2
3
4
5
V
DS
= 10 V
10
1
0.1
100
1000
T
ch
=
-
50C
-
25C
25C
75C
150C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
1.0
1.5
0.5
2.0
2.5
3.0
-
50
-
10
30
70
110
150
0
| y
fs
| - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
Pulsed
V
DS
= 10 V
10
1
100
0.1
0.01
0.1
1
10
100
T
ch
= 150C
75C
25C
-
25C
-
50C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - m
0
0
10
5
15
20
15
20
5
10
Pulsed
I
D
= 80 A
40 A
16 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
4
8
12
16
20
10
100
1000
1
Pulsed
0
V
GS
= 4.5 V
7.0 V
10 V
Data Sheet D14991EJ1V0DS
4
2SK3467
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance - m
0
-
50
-
10
2
4
6
8
10
12
30
70
110
150
7.0 V
10 V
V
GS
= 4.5 V
I
D
= 40 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
I
SD
- Diode Forward Current - A
0
V
SD
- Source to Drain Voltage - V
0.4
0.8
1.2
1.6
2.0
Pulsed
0.1
0.01
1
10
100
1000
0 V
4.5 V
V
GS
= 10 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
0.1
100
1000
10000
1
10
100
V
GS
= 0 V
f = 1 MHz
C
oss
C
rss
C
iss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10
1
1
0.1
100
1000
10
100
t
f
t
r
t
d(on)
t
d(off)
V
DD
= 10 V
V
GS
= 10 V
R
G
= 10
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
SD
- Diode Forward Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/ s
V
GS
= 0 V
1
0.1
10
1
10
100
1000
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
0
10
20
30
40
50
60
2
4
6
8
10
12
14
16
18
4
0
8
V
DD
= 16 V
10 V
V
DS
12
V
GS
I
D
= 80 A
Data Sheet D14991EJ1V0DS
5
2SK3467
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
ch
- Channel Temperature - C
dT - Percentage of Rated Power - %
0
40
20
60
140
80
120
100
160
0
20
40
60
80
100
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
0
80
20
40
60
100
140
120
160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
10
20
30
40
50
60
70
80
FORWARD BIAS SAFE OPERATING AREA
1
10
100
I
D
- Drain Current - A
0.1
V
DS
- Drain to Source Voltage - V
100
1000
10
1
Po
we
r Dissipation Limited
100
s
10
m
s
300
s
1 m
s
3 m
s
PW
= 1
0
s
DC
I
D(DC)
I
D(pulse)
T
C
= 25C
Single Pulse
R
DS
(o
n)
Limited
(@V
GS
= 10 V)
PW - Pulse Width - sec
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(
t
)
- Transient Thermal Resistance -
C
/W
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
Single Pulse
10
100
R
th(ch-C)
= 1.65C/W
R
th(ch-A)
= 83.3C/W
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