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MOS FIELD EFFECT TRANSISTOR
2SK3484
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15069EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2002
DESCRIPTION
The 2SK3484 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low on-state resistance
R
DS(on)1
= 125 m
MAX. (V
GS
= 10 V, I
D
= 8 A)
R
DS(on)2
= 148 m
MAX. (V
GS
= 4.5 V, I
D
= 8 A)
Low C
iss
: C
iss
= 900 pF TYP.
Built-in gate protection diode
TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
100
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
20
V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
16
A
Drain Current (pulse)
Note1
I
D(pulse)
22 A
Total Power Dissipation (T
C
= 25C)
P
T1
30
W
Total Power Dissipation (T
A
= 25C)
P
T2
1.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note2
I
AS
10
A
Single Avalanche Energy
Note2
E
AS
10
mJ
Notes 1. PW
10
s, Duty Cycle
1%
2. Starting T
ch
= 25C, V
DD
= 50 V, R
G
= 25
,
V
GS
= 20
0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
R
th(ch-C)
4.17
C/W
Channel to Ambient Thermal Resistance
R
th(ch-A)
125
C/W
(TO-251)
(TO-252)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3484 TO-251
(MP-3)
2SK3484-Z TO-252
(MP-3Z)
Data Sheet D15069EJ2V0DS
2
2SK3484
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS SYMBOL
TEST
CONDITIONS MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 100 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
= 20 V, V
DS
= 0 V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
= 10 V, I
D
= 8 A
4.7
9.5
S
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
= 10 V, I
D
= 8 A
100
125
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 8 A
110
148
m
Input Capacitance
C
iss
V
DS
= 10 V
900
pF
Output Capacitance
C
oss
V
GS
= 0 V
110
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
50
pF
Turn-on Delay Time
t
d(on)
V
DD
= 50 V, I
D
= 8 A
9.0 ns
Rise Time
t
r
V
GS
= 10 V
5.0
ns
Turn-off Delay Time
t
d(off)
R
G
= 0
30 ns
Fall Time
t
f
4.0 ns
Total Gate Charge
Q
G
V
DD
= 80 V
20
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
3.0
nC
Gate to Drain Charge
Q
GD
I
D
= 16 A
5.0
nC
Body Diode Forward Voltage
Note
V
F(S-D)
I
F
= 16 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 16 A, V
GS
= 0 V
60
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
122
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
= 20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet D15069EJ2V0DS
3
2SK3484
TYPICAL CHARACTERISTICS (T
A
= 25C)
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
80
20
40
60
100
140
120
160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
40
30
20
10
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature - C
dT - Percentage of Rated Power - %
0
40
20
60
100
140
80
120
160
120
100
80
60
40
20
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance -
C
/W
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
Single Pulse
10
100
R
th(ch-C)
= 4.17C/W
R
th(ch-A)
= 125C/W
FORWARD BIAS SAFE OPERATING AREA
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
10
1
0.1
100
0.1
1
10
100
T
C
= 25C
Single Pulse
1000
10 ms
I
D(pulse)
I
D(DC)
1 ms
100
s
10
s
R
DS(on)
Limited
(at V
GS
= 10 V)
P
ow
er Dissipation
Limited
DC
Data Sheet D15069EJ2V0DS
4
2SK3484
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
1
0.1
250
200
150
100
50
0
10
100
Pulsed
V
GS
= 4.5 V
10 V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate Cut-off Voltage - V
1
2
3
4
-50
0
50
100
150
0
V
DS
= 10 V
I
D
= 1 mA
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
0.01
0.1
1
10
100
10
100
0.1
0.01
1
Pulsed
T
A
= 150C
75C
25C
-40C
V
DS
= 10 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - m
5
10
15
20
200
150
100
50
0
8 A
I
D
= 16 A
Pulsed
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
2
3
4
1
0
V
GS
=10 V
4.5 V
25
20
15
10
5
0
Pulsed
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
1
2
3
4
5
1
0.01
10
1
0.1
100
T
A
=
-40C
25C
75C
150C
Pulsed
V
DS
= 10 V
Data Sheet D15069EJ2V0DS
5
2SK3484
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10
1
1
0.1
100
1000
10
100
t
f
t
r
t
d(on)
t
d(off)
V
DD
= 50 V
V
GS
= 10 V
R
G
= 0
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
10
0.01
0.1
100
1000
10000
1
10
100
C
iss
V
GS
= 0 V
f = 1 MHz
C
oss
C
rss
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance - m
-50
0
50
100
150
300
200
100
0
10 V
V
GS
= 4.5 V
I
D
= 8 A
Pulsed
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1
I
SD
- Diode Forward Current - A
0
1.5
V
SD
- Source to Drain Voltage - V
0.5
Pulsed
0.01
0.1
1
10
100
0 V
V
GS
= 10 V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/ s
V
GS
= 0 V
1
0.1
10
1
10
100
1000
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Drain Voltage - V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
5
10
15
20
25
100
80
60
40
20
0
V
DS
V
GS
V
DD
= 80 V
50 V
20 V
I
D
= 16 A
10
8
6
4
2
0
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