2001
MOS FIELD EFFECT TRANSISTOR
2SK3510
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
D15687EJ1V0DS00 (1st edition)
Date Published
May 2002 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3510 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance:
R
DS(on)
= 8.5
m
MAX. (V
GS
= 10
V, I
D
= 42
A)
Low C
iss
: C
iss
= 8500
pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
75
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
20
V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
83
A
Drain Current (pulse)
Note1
I
D(pulse)
332
A
Total Power Dissipation (T
C
= 25C)
P
T1
125
W
Total Power Dissipation (T
A
= 25C)
P
T2
1.5
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note2
I
AS
69
A
Single Avalanche Energy
Note2
E
AS
450
mJ
Notes 1. PW
10
s, Duty Cycle
1%
2. Starting T
ch
= 25C, V
DD
= 35 V, R
G
= 25
,
V
GS
= 20
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3510
TO-220AB
2SK3510-S
TO-262
2SK3510-ZJ
TO-263
2SK3510-Z
TO-220SMD
Note
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
Data Sheet D15687EJ1V0DS
2
2SK3510
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 75 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
=
20 V, V
DS
= 0 V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
2.0
3.0
4.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 42 A
30
60
S
Drain to Source On-state Resistance
R
DS(on)
V
GS
= 10 V, I
D
= 42 A
6.5
8.5
m
Input Capacitance
C
iss
V
DS
= 10 V
8500
pF
Output Capacitance
C
oss
V
GS
= 0 V
1300
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
650
pF
Turn-on Delay Time
t
d(on)
V
DD
= 38 V, I
D
= 42 A
35
ns
Rise Time
t
r
V
GS
= 10 V
28
ns
Turn-off Delay Time
t
d(off)
R
G
= 0
105
ns
Fall Time
t
f
16
ns
Total Gate Charge
Q
G
V
DD
= 60 V
150
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
30
nC
Gate to Drain Charge
Q
GD
I
D
= 83 A
52
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 83 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 83 A, V
GS
= 0 V
80
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
240
nC
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1
s
Duty Cycle
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet D15687EJ1V0DS
3
2SK3510
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - P
e
rc
ent
age of
Rat
ed P
o
w
e
r - %
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
P
T
- T
o
t
a
l
P
o
w
e
r Di
s
s
i
p
at
i
on - W
0
25
50
75
100
125
150
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
C
T
C
- Case Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drai
n Current
- A
1
10
100
0.1
1
10
100
1000
0.1
1 ms
10
ms
PW
= 10
s
100
s
I
D(pulse)
I
D(DC)
Po
we
r Dissipation
Limited
DC
R
DS
(o
n)
Limited
(at V
GS
= 10 V)
T
C
= 25C
Single Pulse
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(
t
)
- Trans
i
ent
Therm
a
l
Res
i
s
t
anc
e -
C/
W
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
Single Pulse
10
100
Channel to Ambient
R
th(ch-A)
= 83.3C/W
Channel to Case
R
th(ch-C)
= 1.0C/W
PW - Pulse Width - s
Data Sheet D15687EJ1V0DS
4
2SK3510
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drai
n Current
- A
0
50
100
150
200
250
300
350
400
0
1
2
3
4
Pulsed
V
G S
= 10 V
I
D
- Drai
n Current
- A
0.1
1
10
100
1000
1
2
3
4
5
6
7
V
D S
= 10 V
Pulsed
T
A
= 150
C
75C
25C
-
55C
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(
o
ff)
Gat
e
Cut
-
of
f
V
o
l
t
age - V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-100
-50
0
50
100
150
200
V
DS
= 10 V
I
D
= 1 mA
| y
fs
| - Forw
ard Trans
f
e
r A
d
m
i
t
t
anc
e - S
0 .0 1
0 .1
1
1 0
1 0 0
0 .0 1
0 .1
1
1 0
1 0 0
T
A
= 1 5 0 C
7 5 C
2 5 C
-
5 5 C
V
D S
= 1 0 V
P u lse d
T
ch
- Channel Temperature -
C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
2
4
6
8
10
12
14
16
18
20
1
10
10 0
10 00
V
G S
= 10 V
P ulse d
0
2
4
6
8
10
0
2
4
6
8
10
12
14
16
18
20
I
D
= 42 A
Pulsed
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
I
D
- Drain Current - A
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
V
GS
- Gate to Source Voltage - V
Data Sheet D15687EJ1V0DS
5
2SK3510
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
0 .0
2 .0
4 .0
6 .0
8 .0
1 0 .0
1 2 .0
1 4 .0
-1 0 0
-5 0
0
5 0
1 0 0
1 5 0
2 0 0
V
G S
= 1 0 V
I
D
= 4 2 A
P u ls e d
C
is
s
, C
os
s
, C
rs
s
- Capac
i
t
anc
e - pF
1 0 0
1 0 0 0
1 0 0 0 0
1 0 0 0 0 0
0 .1
1
1 0
1 0 0
C
is s
C
rs s
C
o s s
V
G S
= 0 V
f = 1 M H z
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
T
ch
- Channel Temperature -
C
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
on)
, t
r
, t
d(
of
f
)
, t
f
- S
w
i
t
c
h
i
ng Ti
m
e
- ns
1
10
100
1000
0.1
1
10
100
V
DD
= 38 V
V
GS
= 10 V
R
G
= 0
t
d(on)
t
d(off)
t
f
t
r
I
D
- Drain Current - A
V
DS
- Drai
n t
o
S
ourc
e
V
o
l
t
age - V
0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
8 0
0
5 0
1 00
1 50
2 00
0
2
4
6
8
1 0
1 2
1 4
1 6
I
D
= 83 A
V
D D
= 60 V
V
D D
= 15 V
V
D D
= 38 V
V
G S
V
D S
Q
G
- Gate Charge - nC
V
GS
- Gat
e
t
o
S
ourc
e
V
o
l
t
age - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs. DRAIN CURRENT
I
SD
- Di
ode Forw
ard Current
- A
0 .0 1
0 .1
1
1 0
1 0 0
1 0 0 0
0
0 .2 0 .4 0 .6 0 .8
1
1 .2 1 .4 1 .6 1 .8
2
V
G S
= 0 V
V
G S
= 1 0 V
P u ls e d
t
rr
- Revers
e Rec
o
very T
i
m
e
- ns
1 0
1 0 0
0 . 1
1
1 0
1 0 0
V
G S
= 0 V
d i/ d t = 1 0 0 A /
s
V
SD
- Source to Drain Voltage - V
I
F
- Drain Current - A
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