The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2001
MOS FIELD EFFECT TRANSISTOR
2SK3511
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
D15617EJ1V0DS00 (1st edition)
Date Published
May 2002 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3511 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance:
R
DS(on)
= 12.5
m
MAX. (V
GS
= 10 V, I
D
= 42 A)
Low C
iss
: C
iss
= 5900
pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
75
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
20
V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
83
A
Drain Current (pulse)
Note1
I
D(pulse)
260
A
Total Power Dissipation (T
C
= 25C)
P
T
100
W
Total Power Dissipation (T
A
= 25C)
P
T
1.5
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note2
I
AS
52
A
Single Avalanche Energy
Note2
E
AS
250
mJ
Notes 1. PW
10
s, Duty cycle
1%
2. Starting T
ch
= 25C, V
DD
= 35 V, R
G
= 25
,
V
GS
= 20
0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
R
th(ch-C)
1.25
C/W
Channel to Ambient Thermal Resistance
R
th(ch-A
)
83.3
C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3511
TO-220AB
2SK3511-S
TO-262
2SK3511-ZJ
TO-263
2SK3511-Z
TO-220SMD
Note
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
Data Sheet D15617EJ1V0DS
2
2SK3511
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 75
V, V
GS
= 0
V
10
A
Gate Leakage Current
I
GSS
V
GS
=
20
V, V
DS
= 0
V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1
mA
2.0
3.0
4.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10
V, I
D
= 42
A
21
45
S
Drain to Source On-state Resistance
R
DS(on)
V
GS
= 10
V, I
D
= 42
A
9.5
12.5
m
Input Capacitance
C
iss
V
DS
= 10
V
5900
pF
Output Capacitance
C
oss
V
GS
= 0
V
810
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
400
pF
Turn-on Delay Time
t
d(on)
V
DD
= 38
V, I
D
= 42
A
30
ns
Rise Time
t
r
V
GS
= 10
V
21
ns
Turn-off Delay Time
t
d(off)
R
G
= 0
72
ns
Fall Time
t
f
12
ns
Total Gate Charge
Q
G
V
DD
= 60
V
100
nC
Gate to Source Charge
Q
GS
V
GS
= 10
V
24
nC
Gate to Drain Charge
Q
GD
I
D
= 83
A
35
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 83
A, V
GS
= 0
V
1.1
V
Reverse Recovery Time
t
rr
I
F
= 83
A, V
GS
= 0
V
70
ns
Reverse Recovery Charge
Q
rr
di/dt = 100
A/
s
200
nC
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1
s
Duty Cycle
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet D15617EJ1V0DS
3
2SK3511
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - P
e
rc
ent
age of
Rat
ed P
o
w
e
r - %
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
P
T
- Tot
a
l
P
o
w
e
r Di
s
s
i
pat
i
on - W
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
C
T
C
- Case Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drai
n Current
- A
0.1
1
10
100
1000
10
100
T
C
= 25C
Single Pulse
0.1
1
R
DS(on)
Limited
at V
GS
= 10
V
I
D(DC)
I
D(pulse)
PW = 10
s
100
s
1 ms
10 ms
Power Dissipation Limited
DC
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(
t
)
- Trans
i
ent
Therm
a
l
Res
i
s
t
anc
e -
C/
W
100
0.1
0.01
1
10
100 m
1
10
100
1000
10
100
1 m
10 m
R
th(ch-C)
= 1.25C/W
R
th(ch-A)
= 83.3C/W
Single Pulse
PW - Pulse Width - s
Data Sheet D15617EJ1V0DS
4
2SK3511
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drai
n Current
- A
0
50
100
150
200
250
300
0
1
2
3
4
5
6
7
8
V
GS
= 10 V
Pulsed
I
D
- Drai
n Current
- A
0.1
1
10
100
1000
1
2
3
4
5
6
7
V
DS
= 10 V
T
A
= 150C
75C
25C
-
55C
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(
o
ff)
Gat
e
Cut
-
of
f
V
o
l
t
age - V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-75
-25
25
75
125
175
V
DS
= 10 V
I
D
= 1 mA
T
ch
- Channel Temperature -
C
|
y
fs
| - Forw
ard Trans
f
e
r A
d
m
i
t
t
anc
e - S
0.01
0.1
1
10
100
0.01
0.1
1
10
100
T
A
= 150C
75C
25C
-
55C
V
DS
= 10 V
Pulsed
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
2
4
6
8
10
12
14
16
18
20
0.1
1
10
100
1000
V
GS
= 10 V
Pulsed
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10 12 14 16 18 20
I
D
= 42 A
Pulsed
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
I
D
- Drain Current - A
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
V
GS
- Gate to Source Voltage - V
Data Sheet D15617EJ1V0DS
5
2SK3511
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
0
5
10
15
20
25
-100
-50
0
50
100
150
200
Pulsed
V
GS
= 10 V
I
D
= 42 A
10
100
1000
10000
0.1
1
10
100
Crss
Coss
Ciss
V
GS
= 0 V
f = 1 MHz
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
T
ch
- Channel Temperature -
C
C
is
s
, C
os
s
, C
rs
s
- Capac
i
t
anc
e - pF
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
on)
, t
r
, t
d(
of
f
)
, t
f
- S
w
i
t
c
h
i
ng Ti
m
e
- ns
10
1
1
0.1
1000
100
10
100
V
DD
= 38 V
V
GS
= 10 V
R
G
= 0
t
f
t
r
t
d(on)
t
d(off)
I
D
- Drain Current - A
V
DS
- Drai
n t
o
S
ourc
e
V
o
l
t
age - V
0
20
40
60
80
100
0
20
40
60
80
100
120
0
2
4
6
8
10
I
D
= 83 A
V
DD
= 60 V
38 V
15 V
V
GS
V
DS
Q
G
- Gate Charge - nC
V
GS
- Gat
e
t
o
S
ourc
e
V
o
l
t
age - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs. DRAIN CURRENT
I
SD
- Di
ode Forw
ard Current
- A
0.01
0.1
1
10
100
1000
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V
GS
= 10 V
0 V
Pulsed
V
SD
- Source to Drain Voltage - V
t
rr
- Revers
e Rec
o
very T
i
m
e
- ns
10
100
0.1
1
10
100
V
GS
= 0 V
di/dt = 100 A/
s
I
F
- Drain Current - A
Data Sheet D15617EJ1V0DS
6
2SK3511
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
I
AS
- S
i
ngl
e A
v
al
anc
he Current
- A
1
10
100
1000
0.001
0.01
0.1
1
10
I
AS
= 52 A
E
AS
= 250 mJ
V
DD
= 35 V
R
G
= 25
V
GS
= 20
0 V
E
nergy Derat
i
ng Fac
t
or - %
25
50
75
100
160
140
120
100
80
60
40
20
0
125
150
V
DD
= 35 V
R
G
= 25
V
GS
= 20
0 V
I
AS
52 A
L - Inductive Load - mH
Starting T
ch
- Starting Channel Temperature -
C
Data Sheet D15617EJ1V0DS
7
2SK3511
PACKAGE DRAWINGS (Unit: mm)
1) TO-220 (MP-25)
2) TO-262 (MP-25 Fin Cut)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0 TYP.
3.60.2
4
3.00.3
1.30.2
0.750.1
2.54 TYP.
2.54 TYP.
5.9 MIN.
6.0 MAX.
15.5 MAX.
12.7 MIN.
1.30.2
0.50.2
2.80.2
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
10 TYP.
1.30.2
0.750.3
2.54 TYP.
2.54 TYP.
8.5
0.2
12.7 MIN.
1.30.2
0.50.2
2.80.2
1.00
.
5
4
3) TO-263 (MP-25ZJ)
4) TO-220SMD (MP-25Z)
Note
1.40.2
1.00.5
2.54 TYP.
2.54 TYP.
8.50.2
1
2
3
5.70.4
4
4.8 MAX.
1.30.2
0.50.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.70.2
10 TYP.
0.5R TYP.
0.8R TYP.
2.80.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
10 TYP.
1.40.2
1.00.5
2.54 TYP.
2.54 TYP.
8.50.2
1
2
3
3.00.5
1.10.4
4
4.8 MAX.
1.30.2
0.50.2
0.5R TYP.
0.8R TYP.
0.750.3
2.80.2
Note This Package is only produced in Japan.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually
used, an additional protection circuit is externally required if a
voltage exceeding the rated voltage may be applied to this device.
2SK3511
M8E 00. 4
The information in this document is current as of May, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
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