The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SK3574
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16260EJ2V0DS00 (2nd edition)
Date Published September 2002 NS CP(K)
Printed in Japan
2002
The mark
!
!
!
!
shows major revised points.
DESCRIPTION
The 2SK3574 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
FEATURES
4.5V drive available
Low on-state resistance
R
DS(on)1
= 13.5 m
MAX. (V
GS
= 10 V, I
D
= 24 A)
Low gate charge
Q
G
= 22 nC TYP. (V
DD
= 24 V, V
GS
= 10 V, I
D
= 48 A)
Built-in gate protection diode
Avalanche capability ratings
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
20
V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
48
A
Drain Current (pulse)
Note1
I
D(pulse)
140
A
Total Power Dissipation (T
A
= 25C)
P
T1
1.5
W
Total Power Dissipation (T
C
= 25C)
P
T2
29
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note2
I
AS
19
A
Single Avalanche Energy
Note2
E
AS
36
mJ
Notes 1. PW
10
s, Duty Cycle
1%
2. Starting T
ch
= 25C, V
DD
= 15 V, R
G
= 25
, V
GS
= 20
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3574
TO-220AB
2SK3574-S
TO-262
2SK3574-ZK
TO-263
2SK3574-Z
TO-220SMD
Note
Note TO-220SMD package is produced only in Japan.
5
Data Sheet D16260EJ2V0DS
2
2SK3574
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
=
20 V, V
DS
= 0 V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 24 A
7.0
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 24 A
10.1
13.5
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 15 A
15
24
m
Input Capacitance
C
iss
V
DS
= 10 V
940
pF
Output Capacitance
C
oss
V
GS
= 0 V
245
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
170
pF
Turn-on Delay Time
t
d(on)
V
DD
= 15 V, I
D
= 24 A
12
ns
Rise Time
t
r
V
GS
= 10 V
18
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
39
ns
Fall Time
t
f
12
ns
Total Gate Charge
Q
G
V
DD
= 24 V
22
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
3.8
nC
Gate to Drain Charge
Q
GD
I
D
= 48 A
7
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 48 A, V
GS
= 0 V
1.1
V
Reverse Recovery Time
t
rr
I
F
= 48 A, V
GS
= 0 V
29
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
24.8
nC
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1
s
Duty Cycle
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
5
Data Sheet D16260EJ2V0DS
3
2SK3574
TYPICAL CHARACTERISTICS (T
A
= 25
C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - P
e
r
c
ent
age o
f
Ra
t
ed P
o
w
e
r - %
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
C
P
T
- Tot
a
l
P
o
w
e
r Di
s
s
i
pat
i
on -
W
0
10
20
30
40
0
25
50
75
100 125 150 175
T
C
- Case Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drai
n Current
-
A
0.1
1
10
100
1000
0.1
1
10
100
I
D(pulse)
PW = 10
s
1 m s
10 m s
Power Disspasion
Limited
R
DS(on)
Lim ited
T
C
= 25
C Single pulse
100
s
I
D(DC)
DC
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(
t
)
-
Trans
i
e
n
t
Ther
m
a
l
Resi
st
anc
e
-
C/W
0.01
0.1
1
10
100
Single pulse
PW - Pulse Width - s
10
100
1 m
10 m
100 m
1
10
100
1000
R
th(ch-A)
= 83.3C/W
R
th(ch-C)
= 4.31C/W
Data Sheet D16260EJ2V0DS
4
2SK3574
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drai
n Current
-
A
0
50
100
150
0
1
2
3
V
GS
= 10 V
4.5 V
Pulsed
V
DS
- Drain to Source Voltage - V
I
D
- Drai
n Current
-
A
0.01
0.1
1
10
100
0
1
2
3
4
5
V
DS
= 10 V
Pulsed
T
ch
= 150
C
75
C
25
C
-
55
C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
GS
(
o
ff)
-
G
a
te
C
u
t-
o
f
f
Vo
lta
g
e
-
V
0
0.5
1
1.5
2
2.5
3
-50
0
50
100
150
V
DS
= 10 V
I
D
= 1 mA
T
ch
- Channel Temperature -
C
| y
fs
| -
Forw
ard Trans
f
e
r A
d
m
i
t
t
anc
e -
S
0.1
1
10
100
0.1
1
10
100
V
DS
= 10 V
Pulsed
T
ch
= 150
C
75
C
25
C
-
55
C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS
(
o
n)
-
D
r
a
i
n t
o
S
o
u
r
c
e
O
n
-s
t
a
t
e
R
e
s
i
s
t
anc
e - m
0
5
10
15
20
25
30
1
10
100
1000
10 V
V
GS
= 4.5 V
Pulsed
I
D
- Drain Current - A
R
DS
(
o
n)
-
D
r
a
i
n t
o
S
o
u
r
c
e
O
n
-s
t
a
t
e
R
e
s
i
s
t
anc
e - m
0
5
10
15
20
25
30
0
5
10
15
20
I
D
= 24 A
Pulsed
V
GS
- Gate to Source Voltage - V
Data Sheet D16260EJ2V0DS
5
2SK3574
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS
(
o
n)
-
D
r
a
i
n t
o
S
o
u
r
c
e
O
n
-s
t
a
t
e
R
e
s
i
s
t
anc
e - m
0
5
10
15
20
25
-50
0
50
100
150
I
D
= 24 A
Pulsed
10 V
V
GS
=4.5 V
T
ch
- Channel Temperature - C
C
is
s
, C
os
s
, C
rs
s
- Ca
pac
i
t
a
n
c
e
-
p
F
10
100
1000
10000
0.01
0.1
1
10
100
V
G S
= 0 V
f = 1 M H z
C
iss
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
o
n
)
, t
r
, t
d
(
o
ff)
, t
f
-
S
w
itc
h
in
g
Tim
e
-
n
s
1
10
100
1000
0.1
1
10
100
t
r
t
d(off)
t
d(on)
t
f
V
DD
= 15 V
V
G S
= 10 V
R
G
= 10
I
D
- Drain Current - A
V
DS
- Drai
n
t
o
S
ourc
e
V
o
l
t
age -
V
0
5
10
15
20
25
30
0
5
10
15
20
25
0
2
4
6
8
10
12
I
D
= 48 A
V
DD
= 24 V
15 V
6 V
V
G S
V
DS
Q
G
- Gate Change - nC
V
GS
- Ga
t
e
t
o
S
our
c
e
V
o
l
t
age -
V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
-
D
i
o
de Fo
r
w
a
r
d C
u
r
r
ent
-
A
0.01
0.1
1
10
100
1000
0
0.5
1
1.5
V
GS
= 10 V
0 V
Pulsed
V
F(S-D)
- Source to Drain Voltage - V
t
rr
- Rev
e
r
s
e
Re
cov
e
ry
T
i
m
e
-
n
s
1
10
100
1000
0.1
1
10
100
di/dt = 100 A/
s
V
G S
= 0 V
I
D
- Drain Current - A
Data Sheet D16260EJ2V0DS
6
2SK3574
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
I
AS
- S
i
n
g
l
e
A
v
al
a
n
c
h
e C
u
rr
ent
- A
0.1
1
10
100
0.01
0.1
1
10
E
AS
= 36 m J
I
AS
= 19 A
V
DD
= 15 V
R
G
= 25
V
GS
= 20
0 V
Starting T
ch
= 25
C
L - Inductive Load - mH
E
nergy Derat
i
ng Fa
c
t
or -
%
0
20
40
60
80
100
120
25
50
75
100
125
150
V
DD
= 15 V
R
G
= 25
V
GS
= 20
0 V
I
AS
19 A
Starting T
ch
- Starting Channel Temperature - C
Data Sheet D16260EJ2V0DS
7
2SK3574
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB(MP-25)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0 TYP.
3.60.2
4
3.00.3
1.30.2
0.750.1
2.54 TYP.
2.54 TYP.
5.9 MIN.
6.0 MAX.
15.5 MAX.
12.7 MIN.
1.30.2
0.50.2
2.80.2
2) TO-262(MP-25 Fin Cut)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
10 TYP.
1.30.2
0.750.3
2.54 TYP.
2.54 TYP.
8.5
0.2
12.7 MIN.
1.30.2
0.50.2
2.80.2
1.00
.
5
4
3) TO-263(MP-25ZK)
10.00.2
8.0 TYP.
2.54
0.70.15
9.150.2
2.450.25
15.250.5
1.350.3
1
2
3
4
2.5
4.450.2
1.30.2
0.50.2
0 to 8
o
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.4
No plating
8.4 TYP.
0.025 to
0.25
0.25
4) TO-220SMD(MP-25Z)
Note
10 TYP.
1.40.2
1.00.5
2.54 TYP.
2.54 TYP.
8.50.2
1
2
3
3.00.5
1.10.4
4
4.8 MAX.
1.30.2
0.50.2
0.5R TYP.
0.8R TYP.
0.750.3
2.80.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Note This package is produced only in Japan.
Remark
The diode connected between the gate and
source of the transistor serves as a protector
against ESD. When this device actually used,
an additional protection circuit is externally
required if a voltage exceeding the rated voltage
may be applied to this device.
5
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
2SK3574
M8E 00. 4
The information in this document is current as of September, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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