The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2001
MOS FIELD EFFECT TRANSISTOR
2SK3576
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
D15939EJ1V0DS00 (1st edition)
Date Published
May 2002 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3576 is a switching device which can be driven
directly by a 2.5 V power source.
The device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
2.5V drive available
Low on-state resistance
R
DS(on)1
= 50 m
MAX. (V
GS
= 4.5
V, I
D
= 2.0
A)
R
DS(on)2
= 53 m
MAX. (V
GS
= 4.0
V, I
D
= 2.0 A)
R
DS(on)3
= 75 m
MAX. (V
GS
= 2.5
V, I
D
= 2.0 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3576
SC-96 (Mini Mold Thin Type)
Marking: XK
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
20
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
12
V
Drain Current (DC) (T
A
= 25C)
I
D(DC)
4.0
A
Drain Current (pulse)
Note1
I
D(pulse)
16
A
Total Power Dissipation (T
A
= 25C)
P
T1
0.2
W
Total Power Dissipation (T
A
= 25C)
Note2
P
T2
1.25
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Notes 1. PW
10
s, Duty Cycle
1%
2. Mounted on FR-4 board, t
5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
0.06
2.8 0.2
1.5
0.95
1
2
3
1.9
2.9 0.2
0.4
+0.1
0.05
0.95
0.65
+0.1 0.15
1 : Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Data Sheet D15939EJ1V0DS
2
2SK3576
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
=
12 V, V
DS
= 0 V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1.0 mA
0.5
1.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 2.0 A
1.0
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 4.5 V, I
D
= 2.0 A
40
50
m
R
DS(on)2
V
GS
= 4.0 V, I
D
= 2.0 A
42
53
m
R
DS(on)3
V
GS
= 2.5 V, I
D
= 2.0 A
56
75
m
Input Capacitance
C
iss
V
DS
= 10 V
250
pF
Output Capacitance
C
oss
V
GS
= 0 V
80
pF
Reverse Transfer Capacitance
C
rss
f = 1.0 MHz
60
pF
Turn-on Delay Time
t
d(on)
V
DD
= 10 V, I
D
= 2.0 A
28
ns
Rise Time
t
r
V
GS
= 4.0 V
140
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
110
ns
Fall Time
t
f
180
ns
Total Gate Charge
Q
G
V
DD
= 16 V
3.3
nC
Gate to Source Charge
Q
GS
V
GS
= 4.0 V
0.7
nC
Gate to Drain Charge
Q
GD
I
D
= 4.0 A
1.5
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 4.0 A, V
GS
= 0 V
0.89
V
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet D15939EJ1V0DS
3
2SK3576
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT - P
e
rc
ent
a
g
e of
Rat
ed P
o
w
e
r - %
0
20
40
60
80
100
120
0
20
40
60
80
100
120
140
160
P
T
- T
o
t
a
l
P
o
w
e
r Di
s
s
i
p
at
i
on - W
0
0.25
0.5
0.75
1
1.25
1.5
0
20
40
60
80
100
120 140
160
T
A
- Ambient Temperature -
C
T
A
- Ambient Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drai
n Current
- A
0.01
0.1
1
10
100
0.1
1
10
100
PW = 1 ms
100 ms
10 ms
I
D(pulse)
I
D(DC)
5 s
R
DS(on)
Limited
(V
GS
= 4.5 V)
Single Pulse
Mounted on FR-4 board of
50 mm 50 mm 1.6 mm
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(
c
h
-
A
)
- Trans
i
ent
Therm
a
l
Res
i
s
t
anc
e -
C/
W
1
10
100
1000
Without board
Single Pulse
Mounted on FR-4 board of
50 mm 50 mm 1.6 mm
PW - Pulse Width - s
1 m
10 m
100 m
1
10
100
1000
Data Sheet D15939EJ1V0DS
4
2SK3576
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drai
n Current
- A
0
4
8
12
16
20
0.0
0.2
0.4
0.6
0.8
1.0
2.5 V
V
GS
= 4.5 V
Pulsed
4.0 V
V
DS
- Drain to Source Voltage - V
I
D
- Drai
n Current
- A
0.00001
0.0001
0.001
0.01
0.1
1
10
100
0
1
2
3
V
D S
= 10 V
T
A
= 125
C
75C
25C
-
25C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(
o
ff)
Gat
e
Cut
-
of
f
V
o
l
t
age - V
0.5
1
1.5
-50
0
50
100
150
V
DS
= 10 V
I
D
= 1 mA
|
y
fs
|
- Forw
ard Trans
f
e
r A
d
m
i
t
t
anc
e - S
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
DS
= 10 V
T
A
= 125
C
75C
25C
-
25C
T
ch
- Channel Temperature -
C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATERESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
30
40
50
60
70
80
90
100
-50
0
50
100
150
I
D
= 2.0 A
4.5 V
4.0 V
V
GS
= 2.5 V
20
30
40
50
60
70
80
90
100
0
2
4
6
8
10
12
I
D
= 2.0 A
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
T
ch
- Channel Temperature - C
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
V
GS
- Gate to Source Voltage - V
Data Sheet D15939EJ1V0DS
5
2SK3576
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
30
40
50
60
70
80
90
0.01
0.1
1
10
100
V
GS
= 2.5 V
Pulsed
T
A
= 125
C
75
C
25
C
-
25
C
20
30
40
50
60
70
80
0.01
0.1
1
10
100
V
GS
= 4.0 V
Pulsed
T
A
= 125
C
75
C
25
C
-
25
C
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
I
D
- Drain Current - A
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
20
30
40
50
60
70
80
0.01
0.1
1
10
100
V
GS
= 4.5 V
Pulsed
T
A
= 125
C
75
C
25
C
-
25
C
I
D
- Drain Current - A
C
is
s
, C
os
s
, C
rs
s
- Capac
i
t
anc
e - pF
10
100
1000
0.1
1
10
100
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
t
d(
on)
, t
r
, t
d(
of
f
)
, t
f
- S
w
i
t
c
h
i
ng Ti
m
e
- ns
10
100
1000
0.1
1
10
V
DD
= 10 V
V
GS
= 4.0 V
R
G
= 10
t
d(off)
t
d(on)
t
r
t
f
I
SD
- Di
ode Forw
ard Current
- A
0.01
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
Pulsed
V
GS
= 0 V
I
D
- Drain Current - A
V
SD
- Source to Drain Voltage - V
Data Sheet D15939EJ1V0DS
6
2SK3576
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gat
e
t
o
S
ourc
e
V
o
l
t
age - V
0
1
2
3
4
5
0
1
2
3
4
5
I
D
= 10 A
V
DD
= 16 V
10 V
Q
G
- Gate Charge - nC
Data Sheet D15939EJ1V0DS
7
2SK3576
[MEMO]
2SK3576
M8E 00. 4
The information in this document is current as of May, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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