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2002
MOS FIELD EFFECT TRANSISTOR
2SK3638
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15966EJ3V0DS00 (3rd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3638-ZK TO-252
(MP-3ZK)
DESCRIPTION
The 2SK3638 is N-channel MOS FET device that features a low
on-state resistance and excellent switching characteristics, and
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
Low on-state resistance
R
DS(on)1
= 8.5 m
MAX. (V
GS
= 10 V, I
D
= 32 A)
R
DS(on)2
= 15 m
MAX. (V
GS
= 4.5 V, I
D
= 18 A)
Low C
iss
: C
iss
= 1100 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
20 V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
20 V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
64 A
Drain Current (pulse)
Note
I
D(pulse)
220 A
Total Power Dissipation (T
C
= 25C)
P
T1
36 W
Total Power Dissipation
P
T2
1.0 W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Note PW
10
s, Duty Cycle
1%
(TO-252)
Data Sheet D15966EJ3V0DS
2
2SK3638
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS SYMBOL
TEST
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
= 20 V, V
DS
= 0 V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.5
V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
= 10 V, I
D
= 32 A
12
25
S
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
= 10 V, I
D
= 32 A
6.8
8.5
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 18 A
10
15
m
Input Capacitance
C
iss
1100
pF
Output Capacitance
C
oss
450
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
170 pF
Turn-on Delay Time
t
d(on)
10
ns
Rise Time
t
r
4.3
ns
Turn-off Delay Time
t
d(off)
35
ns
Fall Time
t
f
V
DD
= 10 V, I
D
= 32 A
V
GS
= 10 V
R
G
= 10
9.7 ns
Total Gate Charge
Q
G
22
nC
Gate to Source Charge
Q
GS
4.3
nC
Gate to Drain Charge
Q
GD
V
DD
= 16 V
V
GS
= 10 V
I
D
= 64 A
5.1 nC
Body Diode Forward Voltage
Note
V
F(S-D)
I
F
= 64 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 64 A, V
GS
= 0 V
31
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
23
nC
Note Pulsed: PW
350
s, Duty Cycle
2%
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet D15966EJ3V0DS
3
2SK3638
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
C
P
T
- Total Power Dissipation - W
0
10
20
30
40
50
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drain Current - A
0.1
1
10
100
1000
0.1
1
10
100
I
D(pulse)
T
C
= 25C
Single pulse
10 m s
Power Dissipation Lim ited
I
D(DC )
PW = 10
s
1 m s
DC
100
s
R
D S (on)
Lim ited
(at V
G S
= 10 V)
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance -
C/W
0.01
0.1
1
10
100
1000
Single pulse
R
th(ch-A)
= 125C/W
R
th(ch-C)
= 3.47C/W
PW - Pulse Width - s
10
100
1 m
10 m
100 m
1
10
100
1000
Data Sheet D15966EJ3V0DS
4
2SK3638
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
0
50
100
150
200
250
0
0.5
1
1.5
2
2.5
3
V
GS
= 10 V
4.5 V
Pulsed
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0.01
0.1
1
10
100
0
1
2
3
4
5
T
ch
=
-55C
25C
75C
150C
V
DS
= 10 V
Pulsed
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(off)
- Gate Cut-off Voltage - V
0
0.5
1
1.5
2
2.5
3
-50
0
50
100
150
V
DS
= 10 V
I
D
= 1 mA
T
ch
- Channel Temperature -
C
|
y
fs
| - Forward Transfer Admittance - S
0.1
1
10
100
0.1
1
10
100
T
ch
=
-55C
25C
75C
150C
V
DS
= 10 V
Pulsed
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(
on)
- Drain to Source On-state Resistance - m
0
5
10
15
20
25
30
1
10
100
1000
10 V
V
GS
= 4.5 V
Pulsed
I
D
- Drain Current - A
R
DS(
on)
- Drain to Source On-state Resistance - m
0
5
10
15
20
25
30
0
5
10
15
20
I
D
= 32 A
Pulsed
V
GS
- Gate to Source Voltage - V
Data Sheet D15966EJ3V0DS
5
2SK3638
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS(
on)
- Drain to Source On-state Resistance - m
0
5
10
15
20
25
-50
0
50
100
150
I
D
= 32 A
Pulsed
10 V
V
GS
= 4.5 V
T
ch
- Channel Temperature - C
C
is
s
, C
os
s
, C
rss
- Capacitance - pF
10
100
1000
10000
0.01
0.1
1
10
100
V
G S
= 0 V
f = 1 M H z
C
iss
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
on)
, t
r
, t
d(
off)
, t
f
- Switching Time - ns
1
10
100
1000
0.1
1
10
100
t
r
t
d(off)
t
d(on)
t
f
V
D D
= 10 V
V
G S
= 10 V
R
G
= 10
I
D
- Drain Current - A
V
DS
- Drain to Source Voltage - V
0
4
8
12
16
20
0
5
10
15
20
25
0
2
4
6
8
10
V
DS
V
D D
= 16 V
10 V
I
D
= 64 A
V
GS
Q
G
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F
- Diode Forward Current - A
0.01
0.1
1
10
100
1000
0
0.5
1
1.5
V
GS
= 10 V
0 V
Pulsed
V
F(S-D)
- Source to Drain Voltage - V
t
rr
- Rev
e
rs
e Rec
o
v
e
ry
Ti
me - ns
1
10
100
1000
0.1
1
10
100
di/dt = 100 A/
s
V
GS
= 0 V
I
F
- Diode Forward Current - A
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