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MOS FIELD EFFECT TRANSISTOR
2SK3640
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15968EJ3V0DS00 (3rd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
2002
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3640-ZK TO-252
(MP-3ZK)
DESCRIPTION
The 2SK3640 is N-channel MOS FET device that features a low
on-state resistance and excellent switching characteristics, and
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
Low on-state resistance
R
DS(on)1
= 21 m
MAX. (V
GS
= 10 V, I
D
= 9 A)
R
DS(on)2
= 40 m
MAX. (V
GS
= 4.5 V, I
D
= 9 A)
Low C
iss
: C
iss
= 570 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30 V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
16 V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
19 A
Drain Current (pulse)
Note1
I
D(pulse)
76 A
Total Power Dissipation (T
C
= 25C)
P
T1
20 W
Total Power Dissipation
P
T2
1.0 W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note2
I
AS
10 A
Single Avalanche Energy
Note2
E
AS
10
mJ
Notes 1. PW
10
s, Duty Cycle
1%
2. Starting T
ch
= 25C, V
DD
= 15 V, R
G
= 25
, L = 100
H, V
GS
= 20
0 V
(TO-252)
Data Sheet D15968EJ3V0DS
2
2SK3640
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS SYMBOL
TEST
CONDITIONS MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
= 16 V, V
DS
= 0 V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.5
V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
= 10 V, I
D
= 9 A
3.7
7.4
S
R
DS(on)1
V
GS
= 10 V, I
D
= 9 A
15
21
m
Drain to Source On-state Resistance
Note
R
DS(on)2
V
GS
= 4.5 V, I
D
= 9 A
24
40
m
Input Capacitance
C
iss
570
pF
Output Capacitance
C
oss
160
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
100
pF
Turn-on Delay Time
t
d(on)
7.7
ns
Rise Time
t
r
4.7
ns
Turn-off Delay Time
t
d(off)
24
ns
Fall Time
t
f
V
DD
= 15 V, I
D
= 9 A
V
GS
= 10 V
R
G
= 10
7 ns
Total Gate Charge
Q
G
14
nC
Gate to Source Charge
Q
GS
2.4
nC
Gate to Drain Charge
Q
GD
V
DD
= 24 V
V
GS
= 10 V
I
D
= 19 A
4.3
nC
Body Diode Forward Voltage
Note
V
F(S-D)
I
F
= 19 A, V
GS
= 0 V
0.95
V
Reverse Recovery Time
t
rr
I
F
= 19 A, V
GS
= 0 V
21
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
12
nC
Note Pulsed: PW
350
s, Duty Cycle
2%
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1 s
Duty Cycle
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet D15968EJ3V0DS
3
2SK3640
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE
TEMPERATURE
dT - Pe
rcentage
of Rated Powe
r -
%
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
C
P
T
- Total Powe
r
Dissipation - W
0
5
10
15
20
25
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Dr
ain Cur
r
ent
- A
0.1
1
10
100
1000
0.1
1
10
100
I
D(pulse)
T
C
= 25
C
Single pulse
Power Dissipation Limited
I
D(DC)
DC
R
DS(on)
Limited
(at V
GS
= 10 V)
10 ms
PW = 10
s
1 ms
100
s
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
-
Transient T
hermal Resistance -
C/W
0.01
0.1
1
10
100
1000
Single pulse
R
th(ch-C)
= 6.25
C/W
R
th(ch-A)
= 125
C/W
PW - Pulse Width - s
10
100
1 m
10 m
100 m
1
10
100
1000
Data Sheet D15968EJ3V0DS
4
2SK3640
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Dr
ain Cur
r
ent
- A
0
20
40
60
80
100
0
1
2
3
V
GS
= 10 V
4.5 V
Pulsed
V
DS
- Drain to Source Voltage - V
I
D
- Dr
ain Cur
r
ent
- A
0.01
0.1
1
10
100
0
1
2
3
4
5
T
ch
=
-55C
25C
75C
150C
V
DS
= 10 V
Pulsed
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL
TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN
CURRENT
V
G
S
(off)
-
Gate C
u
t
-
off Voltage - V
0
0.5
1
1.5
2
2.5
3
-50
0
50
100
150
V
DS
= 10 V
I
D
= 1 mA
T
ch
- Channel Temperature -
C
|
y
fs
| - Forward
T
r
ansfer Admittan
c
e - S
0.1
1
10
100
0.1
1
10
100
V
DS
= 10 V
Pulsed
T
ch
=
-55C
25C
75C
150C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(
on)
- Drain to S
ource On
-state Re
sistance - m
0
10
20
30
40
50
0.1
1
10
100
10 V
V
GS
= 4.5 V
Pulsed
I
D
- Drain Current - A
R
DS(
on)
- Drain to S
ource On
-state Re
sistance - m
0
10
20
30
40
50
0
5
10
15
20
I
D
= 9 A
Pulsed
V
GS
- Gate to Source Voltage - V
Data Sheet D15968EJ3V0DS
5
2SK3640
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS(
on)
- Drain to S
ource On
-state Re
sistance - m
0
10
20
30
40
-50
0
50
100
150
I
D
= 9 A
Pulsed
10 V
V
GS
= 4.5 V
T
ch
- Channel Temperature - C
C
is
s
, C
os
s
, C
rss
- Capacitance - pF
10
100
1000
10000
0.01
0.1
1
10
100
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
on)
, t
r
, t
d(
off)
, t
f
- Swi
t
ching Time - ns
1
10
100
0.1
1
10
100
t
r
t
d(off)
t
d(on)
t
f
V
DD
= 15 V
V
GS
= 10 V
R
G
= 10
I
D
- Drain Current - A
V
DS
- D
r
ain to So
urce Voltage - V
0
5
10
15
20
25
30
0
5
10
15
0
2
4
6
8
10
12
V
DS
V
DD
= 24 V
15 V
6 V
I
D
= 19 A
V
GS
Q
G
- Gate Charge - nC
V
GS
-
Gate to So
urce Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F
- Diode Fo
rwa
r
d
Curren
t
- A
0.01
0.1
1
10
100
1000
0
0.5
1
1.5
V
GS
= 10 V
0 V
Pulsed
V
F(S-D)
- Source to Drain Voltage - V
t
rr
- Rev
e
rs
e Rec
o
v
e
ry
Ti
me - ns
1
10
100
1000
0.1
1
10
100
di/dt = 100 A/
s
V
GS
= 0 V
I
F
- Diode Forward Current - A
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