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MOS FIELD EFFECT TRANSISTOR
2SK3641
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15969EJ3V0DS00 (3rd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
2002
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3641-ZK TO-252
(MP-3ZK)
DESCRIPTION
The 2SK3641 is N-channel MOS FET device that features a low
on-state resistance and excellent switching characteristics, and
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
Low on-state resistance
R
DS(on)1
= 14 m
MAX. (V
GS
= 10 V, I
D
= 18 A)
R
DS(on)2
= 25 m
MAX. (V
GS
= 4.5 V, I
D
= 15 A)
Low C
iss
: C
iss
= 930 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30 V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
20 V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
36 A
Drain Current (pulse)
Note1
I
D(pulse)
140 A
Total Power Dissipation (T
C
= 25C)
P
T1
29 W
Total Power Dissipation
P
T2
1.0 W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note2
I
AS
19 A
Single Avalanche Energy
Note2
E
AS
36
mJ
Notes 1. PW
10
s, Duty Cycle
1%
2. Starting T
ch
= 25C, V
DD
= 15 V, R
G
= 25
, L = 100
H, V
GS
= 20
0 V
(TO-252)
Data Sheet D15969EJ3V0DS
2
2SK3641
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS SYMBOL
TEST
CONDITIONS MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
= 20 V, V
DS
= 0 V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.5
V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
= 10 V, I
D
= 18 A
5.5
11
S
R
DS(on)1
V
GS
= 10 V, I
D
= 18 A
11
14
m
Drain to Source On-state Resistance
Note
R
DS(on)2
V
GS
= 4.5 V, I
D
= 15 A
17
25
m
Input Capacitance
C
iss
930
pF
Output Capacitance
C
oss
250
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
160
pF
Turn-on Delay Time
t
d(on)
9.4
ns
Rise Time
t
r
8.6
ns
Turn-off Delay Time
t
d(off)
34
ns
Fall Time
t
f
V
DD
= 15 V, I
D
= 18 A
V
GS
= 10 V
R
G
= 10
11
ns
Total Gate Charge
Q
G
22
nC
Gate to Source Charge
Q
GS
3.6
nC
Gate to Drain Charge
Q
GD
V
DD
= 24 V
V
GS
= 10 V
I
D
= 36 A
7.4
nC
Body Diode Forward Voltage
Note
V
F(S-D)
I
F
= 36 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 36 A, V
GS
= 0 V
24
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
15
nC
Note Pulsed: PW
350
s, Duty Cycle
2%
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1 s
Duty Cycle
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet D15969EJ3V0DS
3
2SK3641
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE
TEMPERATURE
dT - Pe
rcentage
of Rated Powe
r -
%
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
C
P
T
- Total Powe
r
Dissipation - W
0
10
20
30
40
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Dr
ain Cur
r
ent
- A
0.1
1
10
100
1000
0.1
1
10
100
I
D(pulse)
T
C
= 25C
Single pulse
10 m s
Power Dissipation Lim ited
I
D (D C)
PW = 100
s
10
s
1 m s
DC
R
DS(on)
Lim ited
(at V
GS
= 10 V)
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
-
Transient T
hermal Resistance -
C/W
0.01
0.1
1
10
100
1000
Single pulse
R
th(ch-C)
= 4.31C/W
R
th(ch-A)
= 125C/W
PW - Pulse Width - s
10
100
1 m
10 m
100 m
1
10
100
1000
Data Sheet D15969EJ3V0DS
4
2SK3641
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Dr
ain Cur
r
ent
- A
0
50
100
150
0
1
2
3
4
5
V
GS
= 10 V
4.5 V
Pulsed
V
DS
- Drain to Source Voltage - V
I
D
- Dr
ain Cur
r
ent
- A
0.01
0.1
1
10
100
0
1
2
3
4
5
T
ch
=
-55C
25C
75C
150C
V
DS
= 10 V
Pulsed
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL
TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN
CURRENT
V
G
S
(off)
-
Gate C
u
t
-
off Voltage - V
0
0.5
1
1.5
2
2.5
3
-50
0
50
100
150
V
DS
= 10 V
I
D
= 1 m A
T
ch
- Channel Temperature -
C
|
y
fs
| - Forward
T
r
ansfer Admittan
c
e - S
0.1
1
10
100
0.1
1
10
100
T
ch
=
-55C
25C
75C
150C
V
DS
= 10 V
Pulsed
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(
on)
- Drain to S
ource On
-state Re
sistance - m
0
10
20
30
40
50
1
10
100
1000
10 V
V
GS
= 4.5 V
Pulsed
I
D
- Drain Current - A
R
DS(
on)
- Drain to S
ource On
-state Re
sistance - m
0
10
20
30
40
50
0
5
10
15
20
I
D
= 18 A
Pulsed
V
GS
- Gate to Source Voltage - V
Data Sheet D15969EJ3V0DS
5
2SK3641
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS(
on)
- Drain to S
ource On
-state Re
sistance - m
0
5
10
15
20
25
30
-50
0
50
100
150
I
D
= 18 A
Pulsed
10 V
V
GS
= 4.5 V
T
ch
- Channel Temperature - C
C
is
s
, C
os
s
, C
rss
- Capacitance - pF
10
100
1000
10000
0.01
0.1
1
10
100
V
G S
= 0 V
f = 1 M H z
C
iss
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
on)
, t
r
, t
d(
off)
, t
f
- Swi
t
ching Time - ns
1
10
100
1000
0.1
1
10
100
t
r
t
d(off)
t
d(on)
t
f
V
DD
= 15 V
V
GS
= 10 V
R
G
= 10
I
D
- Drain Current - A
V
DS
- D
r
ain to So
urce Voltage - V
0
5
10
15
20
25
30
0
5
10
15
20
25
0
2
4
6
8
10
12
I
D
= 36 A
V
D D
= 24 V
15 V
6 V
V
GS
V
DS
Q
G
- Gate Charge - nC
V
GS
-
Gate to So
urce Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F
- Diode Fo
rwa
r
d
Curren
t
- A
0.01
0.1
1
10
100
1000
0
0.5
1
1.5
2
V
GS
= 10 V
0 V
Pulsed
V
F(S-D)
- Source to Drain Voltage - V
t
rr
- Rev
e
rs
e Rec
o
v
e
ry
Ti
me - ns
1
10
100
1000
0.1
1
10
100
di/dt = 100 A/
s
V
GS
= 0 V
I
F
- Diode Forward Current - A
Data Sheet D15969EJ3V0DS
6
2SK3641
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
I
AS
- Single Avalanche Current
- A
0.1
1
10
100
0.01
0.1
1
10
E
AS
= 36 m J
I
AS
= 19 A
V
DD
= 15 V
R
G
= 25
V
GS
= 20
0 V
Starting T
ch
= 25C
L - Inductive Load - mH
Energy Derating
Factor -
%
0
20
40
60
80
100
120
25
50
75
100
125
150
V
DD
= 15 V
R
G
= 25
V
GS
= 20
0 V
I
AS
19 A
Starting T
ch
- Starting Channel Temperature - C
Data Sheet D15969EJ3V0DS
7
2SK3641
PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3ZK)
6.5
0.2
2.3
0.1
0.5
0.1
0.76
0.12
0 to 0.25
0.5
0.1
1.0
No Plating
No Plating
5.1 TYP.
1.0 TYP.
6.1
0.2
0.51 MIN.
4.0 MIN
.
0.8
10.4 MAX. (9.8 TYP.)
4.3 MIN.
1
4
2
3
1.14 MAX.
2.3
2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
2SK3641
The information in this document is current as of January, 2005. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
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M8E 02. 11-1
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