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Электронный компонент: 2SK3653B

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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
JUNCTION FIELD EFFECT TRANSISTOR
2SK3653B
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DATA SHEET
Document No. D17284EJ1V0DS00 (1st edition)
Date Published August 2004 NS CP(K)
Printed in Japan
2004
DESCRIPTION
The 2SK3653B is suitable for converter of ECM.
General-purpose product.
FEATURES
Low noise:
-108.5 dB TYP. (V
DD
= 2.0 V, C = 5 pF, R
L
= 2.2 k
)
Especially suitable for audio and telephone
Super thin thickness package:
t = 0.37 mm TYP.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3653B
3pXSOF (0814)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
=
-1.0 V)
V
DSX
20 V
Gate to Drain Voltage
V
GDO
-20 V
Drain Current
I
D
10
mA
Gate Current
I
G
10
mA
Total Power Dissipation
P
T
100
mW
Junction Temperature
T
j
125
C
Storage Temperature
T
stg
-55 to +125
C
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
PACKAGE DRAWING (Unit: mm)
0.3 0.05
1.2 0.1
MAX. 0.4
0.8 0.1
1.4 0.1
0 to 0.05
0.13
+0.1
0.05
0.2
+0.1
0
0.2
2
0.45
0.45
3
1
(0.26)
EQUIVALENT CIRCUIT
3
2
1
1: Source
2: Drain
3: Gate
Data Sheet D17284EJ1V0DS
2
2SK3653B
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS SYMBOL
TEST
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Cut-off Current
I
DSS
V
DS
= 2.0 V, V
GS
= 0 V
90
200
430
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 2.0
V, I
D
= 1.0
A
-0.37
-1.0 V
Forward Transfer Admittance
| y
fs1
| V
DS
= 2.0 V, I
D
= 30
A, f = 1.0 kHz
300
480
S
| y
fs2
| V
DS
= 2.0 V, V
GS
= 0 V, f = 1.0 kHz
750
1300
S
Input Capacitance
C
iss
V
DS
= 2.0 V, V
GS
= 0 V, f = 1.0 MHz
4.0
pF
Voltage Gain
G
V
V
DD
= 2.0 V, C = 5 pF, R
L
= 2.2 k
, -1.0 dB
V
IN
= 10 mV, f = 1 kHz
Noise Voltage
NV V
DD
= 2.0 V, C = 5 pF, R
L
= 2.2 k
, -108.5 dB
A-curve
I
DSS
CLASSIFICATION
MARKING CE
CF
CH
CJ
I
DSS
(
A)
90 to 180
150 to 240
210 to 350
320 to 430
VOLTAGE GAIN TEST CIRCUIT
C
R
L
V
DD
Out
NOISE VOLTAGE TEST CIRCUIT
C
R
L
V
DD
NV (r.m.s)
JIS A

Data Sheet D17284EJ1V0DS
3
2SK3653B
TYPICAL CHARACTERISTICS (T
A
= 25C)

DERATING FACTOR OF POWER DISSIPATION
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
dT - D
e
rating F
a
ctor - %
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature - C
I
D
- Dr
ain Cur
r
ent
-
A
0
200
400
600
800
1000
0
2
4
6
8
10
0 V
-0.2 V
-0.3 V
-0.1 V
V
GS
= 0.2 V
0.1 V
V
DS
- Drain to Source Voltage - V
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
I
GS
-
Gate to So
u
r
ce Current -
A
0
10
20
30
40
-10
-20
-30
-40
0.2 0.4 0.6 0.8
-0.2
-0.4
-0.6
-0.8
V
GS
- Gate to Source Voltage - V
I
D
- Dr
ain Cur
r
ent
-
A
0
200
400
600
800
1000
1200
1400
1600
-0.8 -0.6 -0.4 -0.2
0
0.2 0.4 0.6 0.8
1
V
DS
= 2.0 V
V
GS
- Gate to Source Voltage - V
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE AND GATE
CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE
DRAIN CURRENT
C
is
s
- Input C
apa
citance - pF
1
10
1
10
100
V
GS
= 0 V
f = 1.0 MHz
V
DS
- Drain to Source Voltage - V
| y
fs
| - Forward
T
r
ansfer Admittan
c
e - mS
V
G
S
(off)
-
Gate C
u
t
-
off Voltage - V
0.1
1
10
10
100
1000
| y
fs
|
V
GS(off)
V
DS
= 2.0 V
I
DSS
- Zero Gate Voltage Drain Current -
A
Data Sheet D17284EJ1V0DS
4
2SK3653B
VOLTAGE GAIN vs. DRAIN CURRENT
NOISE VOLTAGE vs. DRAIN CURRENT
G
V

- Voltage
Gain - dB
3
2
1
0
-1
-2
-3
-4
-5
10
100
1000
V
DD
= 2.0 V
C = 5 pF
R
L
= 2.2 k
V
IN
= 10 mV
f = 1 kHz
I
DSS
- Drain Current -
A
NV - Noise Voltage - dB
-103
-105
-107
-109
-111
-113
-115
10
100
1000
V
DD
= 2.0 V
C = 5 pF
R
L
= 2.2 k
I
DSS
- Drain Current -
A
2SK3653B








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M8E 02. 11-1