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MOS FIELD EFFECT TRANSISTOR
PA678TB
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. G16607EJ1V0DS00 (1st edition)
Date Published February 2003 NS CP(K)
Printed in Japan
2003
DESCRIPTION
The
PA678TB is a switching device, which can be driven
directly by a 2.5 V power source.
The
PA678TB features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
2.5 V drive available
Low on-state resistance
R
DS(on)1
= 1.45
MAX. (V
GS
=
-
4.5
V, I
D
=
-
0.20
A)
R
DS(on)2
= 1.55
MAX. (V
GS
=
-
4.0
V, I
D
=
-
0.20 A)
R
DS(on)3
= 2.98
MAX. (V
GS
=
-
2.5
V, I
D
=
-
0.15 A)
Two MOS FET circuits in same size package as SC-70
ORDERING INFORMATION
PART NUMBER
PACKAGE
PA678TB
SC-88 (SSP)
Marking: XA
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
-
20
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
m
12
V
Drain Current (DC)
I
D(DC)
m
0.25
A
Drain Current (pulse)
Note1
I
D(pulse)
m
1.00
A
Total Power Dissipation (2 units)
Note2
P
T
0.2
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Notes 1. PW
10
s, Duty Cycle
1%
2. Mounted on FR-4 board of 2500 mm
2
x 1.1 mm
Caution This product is electrostatic-sensitive device due to low ESD capability and
shoud be handled with caution for electrostatic discharge.
V
ESD
=
100 V TYP. (C = 200 pF, R = 0
, Single pulse)
PACKAGE DRAWING (Unit: mm)
0.2
+0.1
-
0
0.15
+0.1
-
0.05
2.1 0.1
1.25 0.1
0.65
1.3
0.7
2.0 0.2
0.9 0.1
0 to 0.1
0.65
6
1
5
2
4
3
PIN CONNECTION (Top View)
6
5
4
1
2
3
1.
2.
3.
4.
5.
6.
Source 1
Gate 1
Drain 2
Source 2
Gate 2
Drain 1
Data Sheet G16607EJ1V0DS
2
PA678TB
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
-
20.0 V, V
GS
= 0 V
-
1.0
A
Gate Leakage Current
I
GSS
V
GS
=
m
12.0 V, V
DS
= 0 V
m
10
A
Gate Cut-off Voltage
Note
V
GS(off)
V
DS
=
-
10.0 V, I
D
=
-
1.0 mA
-
0.8
-
1.3
-
1.8
V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
=
-
10.0 V, I
D
=
-
0.20 A
0.2
0.6
S
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
=
-
4.5 V, I
D
=
-
0.20 A
1.17
1.45
R
DS(on)2
V
GS
=
-
4.0 V, I
D
=
-
0.20 A
1.25
1.55
R
DS(on)3
V
GS
=
-
2.5 V, I
D
=
-
0.15 A
2.25
2.98
Input Capacitance
C
iss
V
DS
=
-
10.0 V
29
pF
Output Capacitance
C
oss
V
GS
= 0 V
15
pF
Reverse Transfer Capacitance
C
rss
f = 1.0 MHz
3
pF
Turn-on Delay Time
t
d(on)
V
DD
=
-
10.0 V, I
D
=
-
0.20 A
23
ns
Rise Time
t
r
V
GS
=
-
4.0 V
39
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
50
ns
Fall Time
t
f
33
ns
Body Diode Forward Voltage
V
F(S-D)
I
F
= 0.25 A, V
GS
= 0 V
0.88
V
Note Pulsed: PW
350
s, Duty cycle
2%
TEST CIRCUIT SWITCHING TIME
PG.
R
G
0
V
GS(
-
)
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS(
-
)
V
DS(
-
)
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet G16607EJ1V0DS
3
PA678TB
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT - P
e
r
c
ent
age o
f
Ra
t
ed P
o
w
e
r - %
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
C
P
T
- Tot
a
l
P
o
w
e
r Di
s
s
i
pat
i
on -
W
0
0.04
0.08
0.12
0.16
0.2
0.24
0
25
50
75
100
125
150
175
Mounted on FR-4 Board of
2500 m m
2
x 1.1 m m
2 units total
T
A
- Ambient Temperature -
C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drai
n Current
-
A
0
- 0.2
- 0.4
- 0.6
- 0.8
- 1
0
- 0.4
- 0.8
- 1.2
- 1.6
- 2
Pulsed
-
2.5 V
V
GS
=
-
4.5 V
-
4.0 V
V
DS
- Drain to Source Voltage - V
I
D
- Drai
n Current
-
A
-0.0001
-0.001
-0.01
-0.1
-1
-10
0
- 1
- 2
- 3
- 4
V
DS
=
-
10 V
Pulsed
T
A
= 125
C
75
C
25
C
-
25
C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL
TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
GS
(
o
ff)
-
G
a
te
C
u
t-
o
f
f
Vo
lta
g
e
-
V
- 0.6
- 0.8
- 1
- 1.2
- 1.4
- 1.6
-50
0
50
100
150
V
DS
=
-
10 V
I
D
=
-
1.0 m A
T
ch
- Channel Temperature -
C
| y
fs
| -
Forw
ard Trans
f
e
r A
d
m
i
t
t
anc
e -
S
0.01
0.1
1
10
- 0.001
- 0.01
- 0.1
- 1
- 10
T
A
=
-
25
C
25
C
75
C
125
C
V
DS
=
-
10 V
Pulsed
I
D
- Drain Current - A
Data Sheet G16607EJ1V0DS
4
PA678TB
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS
(
o
n)
-
D
r
a
i
n t
o
S
o
u
r
c
e
O
n
-s
t
a
t
e
R
e
s
i
s
t
anc
e -
0
1
2
3
4
-50
0
50
100
150
Pulsed
V
GS
=
-
2.5 V, I
D
=
-
0.15 A
V
GS
=
-
4.0 V, I
D
=
-
0.20 A
V
GS
=
-
4.5 V, I
D
=
-
0.20 A
T
ch
- Channel Temperature - C
R
DS
(
o
n)
-
D
r
a
i
n t
o
S
o
u
r
c
e
O
n
-s
t
a
t
e
R
e
s
i
s
t
anc
e -
0
1
2
3
4
0
- 2
- 4
- 6
- 8
- 10
- 12
I
D
=
-
0.20 A
Pulsed
V
GS
- Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS
(
o
n)
-
D
r
a
i
n t
o
S
o
u
r
c
e
O
n
-s
t
a
t
e
R
e
s
i
s
t
anc
e -
0
1
2
3
4
- 0.01
- 0.1
- 1
- 10
V
GS
=
-
4.5 V
Pulsed
-
25C
25
C
75
C
T
A
= 125
C
I
D
- Drain Current - A
R
DS
(
o
n)
-
D
r
a
i
n t
o
S
o
u
r
c
e
O
n
-s
t
a
t
e
R
e
s
i
s
t
anc
e -
0
1
2
3
4
- 0.01
- 0.1
- 1
- 10
V
GS
=
-
4.0 V
Pulsed
-
25
C
25
C
75
C
T
A
= 125
C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
CAPACITANCE vs. DRAIN TO SOURCE
VOLTAGE
R
DS
(
o
n)
-
D
r
a
i
n t
o
S
o
u
r
c
e
O
n
-s
t
a
t
e
R
e
s
i
s
t
anc
e -
0
1
2
3
4
- 0.01
- 0.1
- 1
- 10
V
GS
=
-
2.5 V
Pulsed
T
A
= 125
C
75
C
25
C
-
25
C
I
D
- Drain Current - A
C
is
s
, C
os
s
, C
rs
s
- C
a
p
a
c
i
t
anc
e -
pF
1
10
100
- 0.1
- 1
- 10
- 100
V
GS
= 0 V
f = 1.0 MHz
C
iss
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
Data Sheet G16607EJ1V0DS
5
PA678TB
SWITCHING CHARACTERISTICS
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
t
d(
o
n
)
, t
r
, t
d
(
o
ff)
, t
f
-
S
w
itc
h
in
g
Tim
e
-
n
s
10
100
1000
-0.01
-0.1
-1
-10
V
DD
=
-
10 V
V
G S
=
-
4.0 V
R
G
= 10
t
d(off)
t
d(on)
t
f
t
r
I
D
- Drain Current - A
I
F
-
D
i
o
de Fo
r
w
a
r
d C
u
r
r
ent
-
A
0.001
0.01
0.1
1
10
0.4
0.6
0.8
1
1.2
1.4
V
G S
= 0 V
Pulsed
V
F(S-D)
- Source to Drain Voltage - V