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confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
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MOS FIELD EFFECT TRANSISTOR
2SK3713
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16588EJ1V0DS00 (1st edition)
Date Published September 2003 NS CP(K)
Printed in Japan
2003
DESCRIPTION
The 2SK3713 is N-channel MOS Field Effect Transistor
designed for high voltage and high speed switching
applications.
FEATURES
Super high V
GS(off)
: V
GS(off)
= 3.8 to 5.8 V
Low C
rss
: C
rss
= 6.5 pF TYP.
Low Q
G
: Q
G
= 25 nC TYP.
Low on-state resistance:
R
DS(on)
= 0.83
MAX. (V
GS
= 10
V, I
D
= 5
A)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
600
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
30
V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
10
A
Drain Current (pulse)
Note1
I
D(pulse)
35
A
Total Power Dissipation (T
C
= 25C)
P
T1
100
W
Total Power Dissipation (T
A
= 25C)
P
T2
1.5
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
-
55 to +150
C
Single Avalanche Current
Note2
I
AS
10
A
Single Avalanche Energy
Note2
E
AS
6
mJ
Notes 1.
PW
10
s, Duty Cycle
1%
2.
Starting T
ch
= 25C, V
DD
= 100 V, L = 100
H, R
G
= 25
, V
GS
= 20
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3713-SK
TO-262
Data Sheet D16588EJ1V0DS
2
2SK3713
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 600 V, V
GS
= 0 V
100
A
Gate Leakage Current
I
GSS
V
GS
=
30 V, V
DS
= 0 V
100
nA
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
3.8
4.8
5.8
V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
= 10 V, I
D
= 5 A
2.5
4.6
S
Drain to Source On-state Resistance
Note
R
DS(on)
V
GS
= 10 V, I
D
= 5 A
0.68
0.83
Input Capacitance
C
iss
V
DS
= 10 V
1460
pF
Output Capacitance
C
oss
V
GS
= 0 V
250
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
6.5
pF
Turn-on Delay Time
t
d(on)
V
DD
= 150 V, I
D
= 5 A
26
ns
Rise Time
t
r
V
GS
= 10 V
8.5
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
30
ns
Fall Time
t
f
5.2
ns
Total Gate Charge
Q
G
V
DD
= 450 V
25
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
12
nC
Gate to Drain Charge
Q
GD
I
D
= 10 A
9
nC
Body Diode Forward Voltage
Note
V
F(S-D)
I
F
= 10 A, V
GS
= 0 V
0.9
1.5
V
Reverse Recovery Time
t
rr
I
F
= 10 A, V
GS
= 0 V
450
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
4.0
C
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
= 20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet D16588EJ1V0DS
3
2SK3713
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - P
e
r
c
ent
age o
f
Ra
t
ed P
o
wer -
%
0
20
40
60
80
100
120
0
25
50
75
100 125 150 175
T
C
- Case Temperature -
C
P
T
- Tot
a
l
P
o
wer Di
ss
i
pat
i
on - W
0
20
40
60
80
100
120
0
25
50
75
100 125 150 175
T
C
- Case Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drai
n Current
-
A
0.01
0.1
1
10
100
0.1
1
10
100
1000
Single pulse
T
C
= 25C
I
D(DC)
I
D(pulse)
R
DS(on)
Limited
(at V
GS
= 10 V)
1 ms
10 ms
PW = 100
s
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(
t
)
-
Trans
i
e
n
t
Therm
a
l
Resi
st
anc
e
-
C/
W
0.01
0.1
1
10
100
1000
R
th(ch-A)
= 83.3C/W
R
th(ch-C)
= 1.25C/W
PW - Pulse Width - s
100
1 m
10 m
100 m
1
10
100
1000
Power Dissipation Limited
Data Sheet D16588EJ1V0DS
4
2SK3713
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drai
n Current
-
A
0
5
10
15
20
25
30
35
40
0
10
20
30
40
V
GS
= 10 V
Pulsed
V
GS
= 20 V
10 V
V
DS
- Drain to Source Voltage - V
I
D
- Drai
n Current
-
A
0.0001
0.001
0.01
0.1
1
10
100
0
5
10
15
V
DS
= 10 V
Pulsed
25C
125C
75C
-
25C
T
A
= 150C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
GS
(
o
ff)
-
G
a
te
C
u
t-
o
f
f
Vo
lta
g
e
-
V
2.5
3
3.5
4
4.5
5
5.5
6
V
DS
= 10 V
I
D
= 1 mA
T
ch
- Channel Temperature -
C
| y
fs
| -
Forward Trans
f
e
r
A
d
m
i
t
t
anc
e -
S
0.01
0.1
1
10
100
0.01
0.1
1
10
100
T
A
=
-
25C
25C
75C
V
DS
= 10 V
Pulsed
125C
150C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS
(
o
n)
-
D
r
a
i
n t
o
S
o
u
r
c
e
O
n
-s
t
a
t
e
R
e
s
i
s
t
anc
e -
0.5
1
1.5
2
0.1
1
10
100
Pulsed
V
GS
= 10 V
20 V
I
D
- Drain Current - A
R
DS
(
o
n)
-
D
r
a
i
n t
o
S
o
u
r
c
e
O
n
-s
t
a
t
e
R
e
s
i
s
t
anc
e -
0
0.6
1.2
1.8
3
7
11
15
Pulsed
I
D
= 10 A
2 A
5 A
V
GS
- Gate to Source Voltage - V
-
25
0
25
50
75
100
125
150
Data Sheet D16588EJ1V0DS
5
2SK3713
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS
(
o
n)
-
D
r
a
i
n t
o
S
o
u
r
c
e
O
n
-s
t
a
t
e
R
e
s
i
s
t
anc
e -
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
-25
0
25
50
75
100
125
150
V
GS
= 10 V
Pulsed
I
D
= 5.0 A
T
ch
- Channel Temperature - C
C
is
s
, C
os
s
, C
rs
s
- C
a
p
a
c
i
t
anc
e -
pF
1
10
100
1000
10000
0.1
1
10
100
1000
C
rss
V
GS
= 0 V
f = 1 MHz
C
oss
C
iss
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
o
n
)
, t
r
, t
d
(
o
ff)
, t
f
-
S
w
itc
h
in
g
Tim
e
-
n
s
1
10
100
1000
0.1
1
10
100
V
DD
= 150 V
V
GS
= 10 V
R
G
= 10
t
d(on)
t
r
t
d(off)
t
f
I
D
- Drain Current - A
V
DS
- Drai
n
t
o
S
ourc
e
V
o
l
t
age -
V
0
100
200
300
400
500
0
4
8
12
16
20
24
0
3
6
9
12
15
I
D
= 10 A
V
GS
V
DS
V
DD
= 450 V
300 V
150 V
Q
G
- Gate Charge - nC
V
GS
- Ga
t
e
t
o
S
our
c
e
V
o
l
t
age -
V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F
-
D
i
o
de Fo
r
w
a
r
d C
u
r
r
ent
-
A
0.01
0.1
1
10
100
0
0.5
1
1.5
Pulsed
V
GS
= 10 V
0 V
V
F(S-D)
- Source to Drain Voltage - V
t
rr
- Re
ver
s
e
Re
co
ver
y
T
i
m
e
-
n
s
10
100
1000
0.1
1
10
100
V
GS
= 0 V
di/dt = 100 A/
s
I
F
- Diode Forward Current - A
Data Sheet D16588EJ1V0DS
6
2SK3713
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
I
AS
- S
i
n
g
l
e
A
v
al
a
n
c
h
e C
u
rr
ent
- A
0.1
1
10
100
0.01
0.1
1
10
I
AS
= 10 A
E
AS
= 6 mJ
L - Inductive Load - mH
E
nergy
Derat
i
ng
Fa
c
t
or -
%
0
20
40
60
80
100
25
50
75
100
125
150
Starting T
ch
- Starting Channel Temperature - C
V
DD
= 100 V
R
G
= 25
V
GS
= 20 0
V
Starting T
ch
= 25C
V
DD
= 100 V
R
G
= 25
V
GS
= 20 0 V
Starting T
ch
= 25C
I
AS
10 A
Data Sheet D16588EJ1V0DS
7
2SK3713
PACKAGE DRAWING (Unit: mm)
TO-262 (MP-25 SK)
10.00.3
4
1.30.2
0.80.15
2.54 2.54
4.450.2
1.30.2
3.0
0.2
1.35
0.3
9.15
0.2
13.7 TYP
.
2.5
0.2
0.50.2
1
2
3
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Drain
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
2SK3713
The information in this document is current as of September, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
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property rights of third parties by or arising from the use of NEC Electronics products listed in this document
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(Note)
M8E 02. 11-1
(1)
(2)
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