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MOS FIELD EFFECT TRANSISTOR
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16538EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
2SK3716
2003
The mark
shows major revised points.
DESCRIPTION
The 2SK3716 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance:
R
DS(on)1
= 6.5
m
MAX. (V
GS
= 10
V, I
D
= 30
A)
R
DS(on)2
= 9.1
m
MAX. (V
GS
= 4.5 V, I
D
= 30
A)
Low C
iss
: C
iss
= 2700
pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
40 V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
20
V
Drain Current (DC) (T
C
= 25
C)
I
D(DC)
60
A
Drain Current (pulse)
Note1
I
D(pulse)
240
A
Total Power Dissipation (T
C
= 25
C)
P
T1
84 W
Total Power Dissipation (T
A
= 25
C)
P
T2
1.0 W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Repetitive Avalanche Current
Note2
I
AS
32
A
Repetitive Avalanche Energy
Note2
E
AS
100
mJ
Notes 1. PW
10
s, Duty Cycle
1%
2. V
DD
= 20 V, R
G
= 25
, V
GS
= 20
0 V, T
ch(peak)
150C
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3716 TO-251
(MP-3)
2SK3716-Z TO-252
(MP-3Z)
(TO-251)
(TO-252)
Data Sheet D16538EJ2V0DS
2
2SK3716
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTICS SYMBOL
TEST
CONDITIONS MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 40 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
= 20 V, V
DS
= 0 V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1
mA 1.5
2.0
2.5
V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
= 10 V, I
D
= 30 A
22
43
S
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
= 10 V, I
D
= 30 A
5.2
6.5
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 30 A
6.6
9.1
m
Input Capacitance
C
iss
V
DS
= 10 V
2700
pF
Output Capacitance
C
oss
V
GS
= 0 V
770
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
290
pF
Turn-on Delay Time
t
d(on)
V
DD
= 20
V, I
D
= 30 A
11
ns
Rise Time
t
r
V
GS
= 10
V
13 ns
Turn-off Delay Time
t
d(off)
R
G
= 0
69 ns
Fall Time
t
f
14 ns
Total Gate Charge
Q
G
V
DD
= 32 V
50
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
9
nC
Gate to Drain Charge
Q
GD
I
D
= 60
A
13
nC
Body Diode Forward Voltage
Note
V
F(S-D)
I
F
= 60 A, V
GS
= 0 V
0.94
1.5
V
Reverse Recovery Time
t
rr
I
F
= 60 A, V
GS
= 0 V
40
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
42 nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1 s
Duty Cycle
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet D16538EJ2V0DS
3
2SK3716
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
C
P
T
- Total Power Dissipation - W
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drain Current - A
0.1
1
10
100
1000
0.1
1
10
100
I
D(pulse)
=
240
A
I
D(DC)
=
60
A
DC
Single Pulse
T
C
= 25C
PW = 100
s
1 ms
10 ms
R
DS(on)
Limited
(at V
GS
= 10 V)
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(
t
)
- Transient Thermal Resistance -
C/W
0.001
0.01
0.1
1
10
100
1000
Channel to Ambient R
th(ch-A)
= 125C/W
Channel to Case R
th(ch-C)
= 1.49C/W
Single Pulse
PW - Pulse Width - s
100
1 m
10 m
100 m
1
10
100
1000
Data Sheet D16538EJ2V0DS
4
2SK3716
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
0
50
100
150
200
250
300
0
0.5
1
1.5
2
2.5
V
GS
= 10 V
4.0 V
4.5 V
Pulsed
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0.001
0.01
0.1
1
10
100
1000
0
1
2
3
4
5
T
A
= 150C
75C
25C
-55C
V
DS
= 10 V
Pulsed
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(
o
ff)
- Gate Cut-off Voltage - V
0
0.5
1
1.5
2
2.5
-100
-50
0
50
100
150
200
V
DS
= 10 V
I
D
= 1 mA
T
ch
- Channel Temperature -
C
| y
fs
| - Forward Transfer Admittance - S
1
10
100
0.1
1
10
100
V
DS
= 10 V
Pulsed
T
A
= 150C
75C
25C
-55C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(
on)
- Drain to Source On-state Resistance - m
0
2
4
6
8
10
12
14
16
18
20
1
10
100
1000
V
GS
= 4.0 V
Pulsed
10 V
4.5 V
I
D
- Drain Current - A
R
DS(
on)
- Drain to Source On-state Resistance - m
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10 12 14 16 18 20
Pulsed
I
D
= 60 A
30 A
12 A
V
GS
- Gate to Source Voltage - V
Data Sheet D16538EJ2V0DS
5
2SK3716
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS(
on)
- Drain to Source On-state Resistance - m
0
2
4
6
8
10
12
14
16
-100
-50
0
50
100
150
200
V
GS
= 4 V
4.5 V
10 V
I
D
= 30 A
Pulsed
T
ch
- Channel Temperature - C
C
is
s
, C
os
s
, C
rss
- Capacitance - pF
100
1000
10000
0.1
1
10
100
V
GS
= 0 V
f = 1 MHz
C
iss
C
rss
C
oss
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
t
d(
on)
, t
r
, t
d(
off)
, t
f
- Switching Time - ns
1
10
100
1000
0.1
1
10
100
V
DD
= 20 V
V
GS
= 10 V
R
G
= 0
t
d(off)
t
d(on)
t
r
t
f
I
D
- Drain Current - A
V
DS
- Drain to Source Voltage - V
0
5
10
15
20
25
30
35
40
45
50
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
9
10
I
D
= 60 A
Pulsed
V
DS
V
GS
V
DD
= 32 V
20 V
8 V
Q
G
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F
- Diode Forward Current - A
0.01
0.1
1
10
100
1000
0
0.5
1
1.5
0 V
V
GS
= 10 V
Pulsed
4.5 V
V
F(S-D)
- Source to Drain Voltage - V
t
rr
- Rev
e
rs
e Rec
o
v
e
ry
Ti
me - ns
10
100
0.1
1
10
100
di/dt = 100 A/
s
V
GS
= 0 V
I
F
- Diode Forward Current - A
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