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JUNCTION FIELD EFFECT TRANSISTOR
2SK3718
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DATA SHEET
Document No. D16786EJ2V0DS00 (2nd edition)
Date Published April 2004 NS CP(K)
Printed in Japan
2003
The mark shows major revised points.
DESCRIPTION
The 2SK3718 is suitable for converter of ECM.
FEATURES
Low noise
NV
=
-117 dB TYP. (V
DS
= 4.5 V, C = 10 pF, R
L
= 1.0 k
)
Especially suitable for telephone, cellular phone & audio
Small package SC-89 (TUSM)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3718
SC-89 (TUSM)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
=
-1.0 V)
V
DSX
20 V
Gate to Drain Voltage
V
GDO
-20
V
Drain Current
I
D
10
mA
Gate Current
I
G
10
mA
Total Power Dissipation
P
T
100
mW
Junction Temperature
T
j
125
C
Storage Temperature
T
stg
-55 to +125
C
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
PACKAGE DRAWING (Unit: mm)
0.3 0.05
1.6 0.1
0.5 0.05
0.8 0.1
0.4
2
0.5
0.5
1.6 0.1
3
1
0.1
+0.1
0.05
0.2
+0.1
0
EQUIVALENT CIRCUIT
3
2
1
1: Source
2: Drain
3: Gate
Data Sheet D16786EJ2V0DS
2
2SK3718
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS SYMBOL
TEST
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Cut-off Current
I
DSS
V
DS
= 5.0 V, V
GS
= 0 V
90
250
430
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 5.0 V, I
D
= 1.0
A
-0.37
-1.0
V
Forward Transfer Admittance
| y
fs1
|
V
DS
= 5.0 V, I
D
= 30
A, f = 1.0 kHz
300 480
S
|
y
fs2
|
V
DS
= 5.0 V, V
GS
= 0 V, f = 1.0 kHz
750
1600
S
Input Capacitance
C
iss
V
DS
= 5.0 V, V
GS
= 0 V, f = 1.0 MHz
3.9
pF
Voltage Gain
G
V
V
DD
= 4.5 V, C = 10 pF, R
L
= 1 k
,
-1.3
dB
V
IN
= 10 mV, f = 1 kHz
Noise Voltage
NV1
V
DD
= 2.0 V, C = 5 pF, R
L
= 2.2 k
,
-109.5
dB
A-curve
NV2
V
DD
= 4.5 V, C = 10 pF, R
L
= 1 k
,
-117
-112
dB
A-curve
I
DSS
CLASSIFICATION
MARKING AE
AF
AH
AJ
I
DSS
(
A)
90 to 180
150 to 240
210 to 350
320 to 430
VOLTAGE GAIN TEST CIRCUIT
C
R
L
V
DD
Out
NOISE VOLTAGE TEST CIRCUIT
C
R
L
V
DD
NV (r.m.s)
JIS A
Data Sheet D16786EJ2V0DS
3
2SK3718
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF POWER DISSIPATION
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
dT - D
e
rating F
a
ctor - %
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
C
I
D
- Dr
ain Cur
r
ent
-
A
0
200
400
600
800
1000
0
2
4
6
8
10
0 V
-0.2 V
-0.1 V
V
GS
= 0.2 V
0.1 V
-0.3 V
V
DS
- Drain to Source Voltage - V
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
I
GS
-
Gate to So
u
r
ce Current -
A
0
10
20
30
40
-10
-20
-30
-40
0.2 0.4 0.6 0.8
-0.2
-0.4
-0.6
-0.8
V
GS
- Gate to Source Voltage - V
I
D
- Dr
ain Cur
r
ent
-
A
0
200
400
600
800
1000
1200
1400
1600
-0.8 -0.6 -0.4 -0.2
0
0.2 0.4 0.6 0.8
1
V
DS
= 5.0 V
V
GS
- Gate to Source Voltage - V
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE AND GATE
CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE
DRAIN CURRENT
C
is
s
- Input C
apacitance - pF
1
10
1
10
100
V
GS
= 0 V
f = 1.0 MHz
V
DS
- Drain to Source Voltage - V
| y
fs
| - Forward
T
r
ansfer Admittan
c
e - mS
V
G
S
(off)
-
Gate C
u
t
-
off Voltage - V
0.1
1
10
10
100
1000
| y
fs
|
V
GS(off)
V
DS
= 5.0 V
I
DSS
- Zero Gate Voltage Drain Current -
A
2SK3718
The information in this document is current as of April, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1
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