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MOS FIELD EFFECT TRANSISTOR
2SK3794
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16778EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
2004
The mark
shows major revised points.
DESCRIPTION
The 2SK3794 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low On-state resistance
R
DS(on)1
= 44 m
MAX. (V
GS
= 10
V, I
D
= 10
A)
R
DS(on)2
= 78 m
MAX. (V
GS
= 4.0
V, I
D
= 10 A)
Low C
iss
: C
iss
= 760 pF TYP.
Built-in gate protection diode
TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
60 V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
20 V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
20 A
Drain Current (pulse)
Note1
I
D(pulse)
50 A
Total Power Dissipation (T
C
= 25C)
P
T1
30 W
Total Power Dissipation (T
A
= 25C)
P
T2
1.0 W
Channel Temperature
T
ch
150 C
Storage Temperature
T
stg
-55 to +150
C
Single Avalanche Current
Note2
I
AS
15 A
Single Avalanche Energy
Note2
E
AS
23 mJ
Repetitive Avalanche Energy
Note3
E
AR
23 mJ
Notes 1. PW
10
s, Duty Cycle
1%
2. Starting T
ch
= 25C, V
DD
= 30 V, R
G
= 25
, V
GS
= 20
0 V
3. I
AR
15 A, T
ch
150C
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3794
TO-251 (MP-3)
2SK3794-Z
TO-252 (MP-3Z)
(TO-251)
(TO-252)
Data Sheet D16778EJ2V0DS
2
2SK3794
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS SYMBOL
TEST
CONDITIONS MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
=
20 V, V
DS
= 0 V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
= 10 V, I
D
= 10 A
5
10
S
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
= 10 V, I
D
= 10 A
35
44
m
R
DS(on)2
V
GS
= 4.0 V, I
D
= 10 A
54
78
m
Input Capacitance
C
iss
V
DS
= 10 V
760
pF
Output Capacitance
C
oss
V
GS
= 0 V
150
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
71
pF
Turn-on Delay Time
t
d(on)
V
DD
= 30 V, I
D
= 10 A
13
ns
Rise Time
t
r
V
GS
= 10 V
170
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
43 ns
Fall Time
t
f
34 ns
Total Gate Charge
Q
G
V
DD
= 48 V
17
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
3.0
nC
Gate to Drain Charge
Q
GD
I
D
= 10 A
4.7
nC
Body Diode Forward Voltage
Note
V
F(S-D)
I
F
= 20 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 20 A, V
GS
= 0 V
39
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
62 nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
= 20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet D16778EJ2V0DS
3
2SK3794
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature - C
dT - Percentage of Rated Power - %
0
40
20
60
100
140
80
120
160
100
80
60
40
20
0
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
0
80
20
40
60
100
140
120
160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
5
10
15
20
25
35
30
FORWARD BIAS SAFE OPERATING AREA
V
DS -
Drain to Source Voltage - V
I
D
- Drain Current - A
1
0.1
10
100
1000
1
10
100
T
C
= 25C
Single Pulse
I
D(pulse)
R
DS(on)
Limited
(at V
GS
= 10 V )
I
D(DC)
PW = 10
s
100
s
1 ms
0.1
DC
Pow
er Dissipation
Limited
10
ms
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance -
C
/W
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
Single Pulse
10
100
R
th(ch-C)
= 4.17 C/W
R
th(ch-A)
= 125 C/W
Data Sheet D16778EJ2V0DS
4
2SK3794
Pulsed
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0
2
3
4
20
50
40
30
1
0
V
GS
=10 V
10
4.0 V
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
Pulsed
1
2
3
4
5
6
V
DS
= 10 V
10
1
0.1
100
1000
T
A
=
-55C
25C
75C
150C
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(th)
- Gate to Source Threshold Voltage - V
0.5
V
DS
= 10 V
I
D
= 1 mA
1.0
1.5
2.0
2.5
3.0
-50
0
50
100
150
0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
0.01
0.1
1
10
100
10
100
0.01
0.1
1
T
A
= 150C
75C
25C
-50C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
10
1
0.1
10
20
30
40
50
60
70
80
100
Pulsed
0
V
GS
= 4.0 V
10 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - m
0
2
4
6
8
10
12
14
16
18 20
40
50
0
100
60
20
10
30
80
70
90
I
D
= 10 A
Data Sheet D16778EJ2V0DS
5
2SK3794
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance - m
0
-50
20
40
60
0
50
100
150
I
D
= 10 A
80
100
120
10 V
V
GS
= 4.0 V
Pulsed
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
10
0.1
100
1000
10000
1
10
100
V
GS
= 0 V
f = 1 MHz
C
oss
C
rss
C
iss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10
1
1
0.1
100
1000
10
100
t
f
t
r
t
d(on)
t
d(off)
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
0
8
12
4
16
20
24
28
32
20
40
60
80
16
14
12
10
8
6
4
2
I
D
= 20 A
V
DD
= 48 V
30 V
12 V
V
GS
V
DS
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
I
F
- Diode Forward Current - A
1.5
V
F(S-D)
- Source to Drain Voltage - V
0.5
0
Pulsed
0.01
0.1
1
10
100
0 V
V
GS
= 10 V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Drain Foward Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/ s
V
GS
= 0 V
1
0.1
10
1
10
100
1000
100
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