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confirm that this is the latest version.
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MOS FIELD EFFECT TRANSISTOR
2SK3814
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16740EJ1V0DS00 (1st edition)
Date Published September 2004 NS CP(K)
Printed in Japan
2004
DESCRIPTION
The 2SK3814 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance
R
DS(on)1
= 8.7 m
MAX. (V
GS
= 10
V, I
D
= 30
A)
R
DS(on)2
= 10.5 m
MAX. (V
GS
= 4.5
V, I
D
= 30
A)
Low C
iss
: C
iss
= 5450 pF TYP.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
60 V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
20 V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
60 A
Drain Current (pulse)
Note1
I
D(pulse)
240 A
Total Power Dissipation (T
C
= 25C)
P
T1
84 W
Total Power Dissipation (T
A
= 25C)
P
T2
1.0 W
Channel Temperature
T
ch
150 C
Storage Temperature
T
stg
-55 to +150
C
Single Avalanche Energy
Note2
E
AS
102 mJ
Repetitive Avalanche Current
Note3
I
AR
32 A
Repetitive Avalanche Energy
Note3
E
AR
102 mJ
Notes 1. PW
10
s, Duty Cycle
1%
2. Starting T
ch
= 25C, V
DD
= 30 V, R
G
= 25
, V
GS
= 20
0 V, L = 100
H
3. T
ch(peak)
150C, R
G
= 25
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3814
TO-251 (MP-3)
2SK3814-Z
TO-252 (MP-3Z)
(TO-251)
(TO-252)
Data Sheet D16740EJ1V0DS
2
2SK3814
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS SYMBOL
TEST
CONDITIONS MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
=
20 V, V
DS
= 0 V
100 nA
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
= 10 V, I
D
= 30 A
22
44
S
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
= 10 V, I
D
= 30 A
7.0
8.7
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 30 A
7.9
10.5
m
Input Capacitance
C
iss
V
DS
= 10 V
5450
pF
Output Capacitance
C
oss
V
GS
= 0 V
550
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
350
pF
Turn-on Delay Time
t
d(on)
V
DD
= 30 V, I
D
= 30 A
23
ns
Rise Time
t
r
V
GS
= 10 V
8.5
ns
Turn-off Delay Time
t
d(off)
R
G
= 0
85 ns
Fall Time
t
f
7.7 ns
Total Gate Charge
Q
G
V
DD
= 48 V
95
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
17
nC
Gate to Drain Charge
Q
GD
I
D
= 60 A
26
nC
Body Diode Forward Voltage
Note
V
F(S-D)
I
F
= 60 A, V
GS
= 0 V
0.95
1.5
V
Reverse Recovery Time
t
rr
I
F
= 60 A, V
GS
= 0 V
36
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
40
nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1
s
Duty Cycle
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet D16740EJ1V0DS
3
2SK3814
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Pe
rcentage
of Rated Powe
r -
%
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
C
P
T
- Total Powe
r
Dissipation - W
0
20
40
60
80
100
0
25
50
75
100 125 150 175
T
C
- Case Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Dr
ain Cur
r
ent
- A
1
10
100
1000
0.1
1
10
100
I
D(pulse)
= 240 A
R
DS(on)
Limited
(at V
GS
= 10 V)
Power Dissipation Limited
I
D(DC)
= 60 A
10 ms
1 ms
100
s
DC
T
C
= 25C
Single pulse
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
-
Transient T
hermal Resistance -
C/W
0.01
0.1
1
10
100
1000
R
th(ch-A)
= 125C/W
R
th(ch-C)
= 1.49C/W
Single pulse
PW - Pulse Width - s
100
1 m
10 m
100 m
1
10
100
1000
Data Sheet D16740EJ1V0DS
4
2SK3814
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Dr
ain Cur
r
ent
- A
0
50
100
150
200
250
300
0
1
2
3
4
5
6
V
GS
= 10 V
Pulsed
4.5 V
V
DS
- Drain to Source Voltage - V
I
D
- Dr
ain Cur
r
ent
- A
0.01
0.1
1
10
100
1000
0
1
2
3
4
5
V
DS
= 10 V
Pulsed
T
ch
=
-55C
25C
75C
125C
150C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(off)
-
Gate C
u
t
-
off Voltage - V
0
0.5
1
1.5
2
2.5
3
3.5
4
-75
-25
25
75
125
175
V
DS
= 10 V
I
D
= 1 mA
T
ch
- Channel Temperature -
C
|
y
fs
| - Forward
T
r
ansfer Admittan
c
e - S
0.1
1
10
100
0.1
1
10
100
V
DS
= 10 V
Pulsed
T
ch
=
-55C
25C
75C
125C
150C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(
on)
- Drain to S
ource On
-state Re
sistance - m
0
5
10
15
20
1
10
100
1000
10 V
Pulsed
V
GS
= 4.5 V
I
D
- Drain Current - A
R
DS(
on)
- Drain to S
ource On
-state Re
sistance - m
0
2
4
6
8
10
12
14
16
0
5
10
15
20
I
D
= 30 A
Pulsed
V
GS
- Gate to Source Voltage - V
Data Sheet D16740EJ1V0DS
5
2SK3814
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS(
on)
- Drain to S
ource On
-state Re
sistance - m
0
5
10
15
20
-75
-25
25
75
125
175
I
D
= 30 A
Pulsed
10 V
V
GS
= 4.5 V
T
ch
- Channel Temperature - C
C
is
s
, C
os
s
, C
rss
- Capacitance - pF
10
100
1000
10000
100000
0.01
0.1
1
10
100
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
on)
, t
r
, t
d(
off)
, t
f
- Swi
t
ching Time - ns
1
10
100
1000
0.1
1
10
100
t
r
t
d(off)
t
d(on)
t
f
I
D
- Drain Current - A
V
DS
- D
r
ain to So
urce Voltage - V
0
10
20
30
40
50
60
0
20
40
60
80
100
0
2
4
6
8
10
12
V
DS
V
DD
= 48 V
30 V
12 V
I
D
= 60 A
V
GS
Q
G
- Gate Charge - nC
V
GS
-
Gate to So
urce Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F
- Diode Fo
rwa
r
d
Curren
t
- A
0.01
0.1
1
10
100
1000
0
0.5
1
1.5
V
GS
= 10 V
0 V
Pulsed
V
F(S-D)
- Source to Drain Voltage - V
t
rr
- Rev
e
rs
e Rec
o
v
e
ry
Ti
me - ns
1
10
100
1000
0.1
1
10
100
di/dt = 100 A/
s
V
GS
= 0
I
F
- Diode Forward Current - A
Data Sheet D16740EJ1V0DS
6
2SK3814
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
I
AS
- Single Avalanche Current
- A
1
10
100
I
AS
= 32 A
E
AS
= 102 mJ
V
DD
= 30 V
R
G
= 25
V
GS
= 20
0 V
Starting T
ch
= 25C
L - Inductive Load - H
Energy Derating
Factor -
%
0
20
40
60
80
100
25
50
75
100
125
150
V
DD
= 30 V
R
G
= 25
V
GS
= 20
0 V
I
AS
32 A
Starting T
ch
- Starting Channel Temperature - C
1
10
100
1 m
10 m
Data Sheet D16740EJ1V0DS
7
2SK3814
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
2) TO-252 (MP-3Z)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2
1
3
6.50.2
5.00.2
4
1.5-
0.1
+0.2
5.50.2
7.0 MIN.
13.7 MIN.
2.3
2.3
0.75
0.50.1
2.30.2
1.60.2
1.10.2
0.5-
0.1
+0.2
0.5-
0.1
+0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1
2
3
4
6.50.2
5.00.2
4.3 MAX.
0.8
2.3 2.3
0.9
MAX.
5.50.2
10.0 MAX.
2.0 MIN.
1.5-
0.1
+0.2
2.30.2
0.50.1
0.8
MAX.
0.8
1.0 MIN.
1.8TYP.
0.7
1.10.2
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Drain
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
2SK3814
The information in this document is current as of September, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
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property rights of third parties by or arising from the use of NEC Electronics products listed in this document
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