The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
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JUNCTION FIELD EFFECT TRANSISTOR
2SK4027
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DATA SHEET
Document No. D17528EJ1V0DS00 (1st edition)
Date Published April 2005 NS CP(K)
Printed in Japan
2005
DESCRIPTION
The 2SK4027 is suitable for converter of ECM.
FEATURES
High gain
-1.0 dB (V
DD
= 2.0 V, C = 5 pF, R
L
= 2.2 k
)
Low noise
-115 dB (V
DD
= 2.0 V, C = 5 pF, R
L
= 2.2 k
)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK4027
SC-59 (Straight)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
=
-1.0 V)
V
DSX
20 V
Gate to Drain Voltage
V
GDO
-20 V
Drain Current
I
D
10
mA
Gate Current
I
G
10
mA
Total Power Dissipation
P
T
200
mW
Junction Temperature
T
j
125
C
Storage Temperature
T
stg
-55 to +125
C
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
PACKAGE DRAWING (Unit: mm)
1.5
2.0 MIN.
2.0 MIN.
0.95
0.95
2.9 0.2
1.9 0.2
0.8 0.1
0.4
+0.1
0.05
0.16
+0.1
0.06
1.1
+0.2
0.1
Marking
1
2
3
EQUIVALENT CIRCUIT
3
2
1
1: Source
2: Drain
3: Gate
Data Sheet D17528EJ1V0DS
3
2SK4027
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF POWER DISSIPATION
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
dT - D
e
rating F
a
ctor - %
0
20
40
60
80
100
120
0
25
50
75
100 125
150 175
T
A
- Ambient Temperature -
C
I
D
- Dr
ain Cur
r
ent
-
A
0
2
4
6
8
10
Pulsed
0.10 V
V
GS
= 0 V
0.05 V
0.20 V
0.15 V
-0.05 V
1000
800
600
400
200
0
V
DS
- Drain to Source Voltage - V
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
I
GS
-
Gate to So
u
r
ce Current -
A
40
30
20
10
0
-10
-20
-30
-40
0.8
0.6
0.4
0.2
-0.8 -0.6 -0.4 -0.2
V
GS
- Gate to Source Voltage - V
I
D
- Dr
ain Cur
r
ent
-
A
V
GS
- Gate to Source Voltage - V
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE AND GATE
CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE
DRAIN CURRENT
C
is
s
- Input C
apacitance - pF
1
10
1
10
100
V
GS
= 0 V
f = 1.0 MHz
V
DS
- Drain to Source Voltage - V
| y
fs
| - Forward
T
r
ansfer Admittan
c
e - mS
V
G
S
(off)
-
Gate C
u
t
-
off Voltage - V
0.1
1
10
10
100
1000
| y
fs
|
V
GS(off)
V
DS
= 2.0 V
I
DSS
- Zero Gate Voltage Drain Current -
A
2SK4027
The information in this document is current as of April, 2005. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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Descriptions of circuits, software and other related information in this document are provided for illustrative
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