ChipFind - документация

Электронный компонент: 3SK206

Скачать:  PDF   ZIP
1995
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK206
FEATURES
Suitable for use as RF amplifier in UHF TV tuner.
Low C
rss
:
0.02 pF TYP.
High G
PS
:
20 dB TYP.
Low NF:
1.1 dB TYP.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Drain to Source Voltage
V
DSX
10
V
Gate1 to Source Voltage
V
G1S
4.5
V
Gate2 to Source Voltage
V
G2S
4.5
V
Drain Current
I
D
80
mA
Total Power Dissipation
P
T
200
mW
Channel Temperature
T
ch
125
C
Storage Temperature
T
stg
55 to +125
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
RF AMP. FOR UHF TV TUNER
N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR
4PIN MINI MOLD
1987
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain to Source Breakdown
BV
DSX
10
V
V
G1S
= 4 V, V
G2S
= 0, I
D
= 20
A
Voltage
Drain Current
I
DSS
10
80
mA
V
DS
= 5 V, V
G1S
= 0, V
G2S
= 0
Gate1 to Source Cutoff Voltage
V
G1S(off)
3.5
V
V
DS
= 5 V, V
G2S
= 0, I
D
= 100
A
Gate2 to Source Cutoff Voltage
V
G2S(off)
3.5
V
V
DS
= 5 V, V
G1S
= 0, I
D
= 100
A
Gate1 Reverse Current
I
G1SS
10
A
V
DS
= 0, V
G1S
= 4 V, V
G2S
= 0
Gate2 Reverse Current
I
G2SS
10
A
V
DS
= 0, V
G2S
= 4 V, V
G1S
= 0
Forward Transfer Admittance
| y
fs
|
25
35
mS
V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 1.0 kHz
Input Capacitance
C
iss
1.0
1.5
2.0
pF
Reverse Transfer Capacitance
C
rss
0.02
0.035
pF
Power Gain
G
PS
16.0
20.0
dB
Noise Figure
NF
1.1
2.5
dB
I
DSS
Classification (Unit: mA)
Class
U76
U77
U78
U79
Marking
U76
U77
U78
U79
I
DSS
10 to 25
20 to 35
30 to 50
45 to 80
PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage
due to those voltage or fields.
PACKAGE DIMENSIONS
in millimeters
2.8
+0.2
0.3
1.5
+0.2
0.1
0.4
+0.1
0.05
0.4
+0.1
0.05
0.4
+0.1
0.05
0.6
+0.1
0.05
1.1
+0.2
3.1
0.16
+0.1
0.06
2.90.2
(1.9)
0.95 0.95
(1.9)
2
3
1
4
0.8
0 to 0.1
5
5
5
5
1. Source
2. Drain
3. Gate 2
4. Gate 1
Document No. P10568EJ2V0DS00 (2nd edition)
(Previous No. TC-2134)
Date Published August 1995 P
Printed in Japan
V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 900 MHz
V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 1.0 MHz
3SK206
2
TYPICAL CHARACTERISTICS (T
A
= 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free Air
400
300
200
100
0
25
50
75
100
125
P
T
Total Power Dissipation mW
T
A
Ambient Temperature C
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
80
|y
fs
| Forward Transfer Admittance mS
40
0
1.8
1.2
0
+0.6
+1.2
0.6
V
G1S
Gate 1 to Source Voltage V
V
DS
= 5 V
f = 1 kHz
V
G1S
= 1 V
0.5 V
0
0.5 V
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
V
DS
= 5 V
f = 1 MHz
C
iss
Input Capacitance pF
0
1.0
2.0
V
G2S
Gate 2 to Source Voltage V
1.0
0
+1.0
V
G2S
= 1 V at I
D
= 10 mA
V
G2S
= 1 V at I
D
= 5 mA
I
D
Drain Current mA
POWER GAIN AND NOISE FIGURE vs.
DRAIN CURRENT
G
PS
Power Gain dB
25
20
15
10
5
10
5
0
NF Noise Figure dB
G
PS
NF
5
10
0
V
DS
= 5 V
V
G2S
= 1 V
f = 900 MHz
V
G2S
= 1 V
I
D
= 10 mA
f = 900 MHz
V
DS
Drain to Source Voltage V
G
PS
Power Gain dB
20
5
0
NF Noise Figure dB
POWER GAIN AND NOISE FIGURE vs.
DRAIN TO SOURCE VOLTAGE
G
PS
NF
10
0
5
10
10
3.0
2.0
0
+1.0
+2.0
1.0
V
G2S
Gate 2 to Source Voltage V
G
PS
Power Gain dB
30
15
0
15
30
45
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
10
5
0
NF Noise Figure dB
G
PS
NF
V
DS
= 5 V
V
G2S
= 1 V at
I
D
= 10 mA
f = 900 MH
Z
3SK206
3
100
I
D
Drain Current mA
1.8
1.2
0
+0.6
+1.2
V
G1S
Gate 1 to Source Voltage V
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
50
0
0.6
V
DS
= 5 V
V
G2S
= 1 V
0.5 V
0
0.5 V
1.0 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
80
|y
fs
| Forward Transfer Admittance mS
40
0
50
100
I
D
Drain Current mA
V
DS
= 5 V
f = 1 kHz
V
G2S
= 1 V
0.5 V
0
0.5 V
S-PARAMETER (V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA)
FREQUENCY
S
11
S
21
S
12
S
22
(MHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100.00
1.003
4.9
3.938
175.0
0.004
41.9
0.963
1.5
200.00
0.984
11.9
4.009
164.1
0.001
173.5
0.958
4.2
300.00
0.985
14.9
3.859
158.5
0.006
71.7
0.972
4.8
400.00
0.964
21.8
3.766
151.3
0.005
93.9
0.972
8.2
500.00
0.928
24.6
3.699
149.1
0.005
74.5
0.965
8.6
600.00
0.928
31.9
3.886
138.8
0.008
84.2
0.983
13.1
700.00
0.869
33.5
3.612
132.3
0.003
65.8
0.961
12.1
800.00
0.889
39.8
3.643
126.1
0.004
98.0
0.995
16.2
900.00
0.832
42.9
3.553
121.5
0.004
102.4
0.981
17.0
1000.00
0.847
47.1
3.817
115.2
0.003
173.4
1.039
20.8
1100.00
0.795
49.8
3.681
106.1
0.010
155.7
0.999
22.3
1200.00
0.833
51.4
3.747
100.4
0.021
147.3
1.107
25.1
3SK206
4
900 MHz G
PS
AND NF TEST CIRCUIT
V
G2S
(1 V)
1 000 pF
47 k
1 000 pF
to 10 pF
to 10 pF
OUTPUT
50
L
2
RFC
1 000 pF
1 000 pF
47 k
L
1
to 10 pF
INPUT
50
to 10 pF
V
DD
(5 V)
V
G1S
L
1,
L
2
: 35
5
0.2 mm
V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA
3SK206
5
[MEMO]
2
3SK206
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
[MEMO]