1993
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK224
FEATURES
Low Noise Figure:
NF = 1.8 dB TYP. (f = 900 MHz)
High Power Gain:
G
PS
= 17 dB TYP. (f = 900 MHz)
Suitable for use as RF amplifier in UHF TV tuner.
Automatically Mounting:
Embossed Type Taping
Small Package:
4 Pins Mini Mold
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Drain to Source Voltage
V
DSX
18
V
Gate1 to Source Voltage
V
G1S
8 (
10)
*1
V
Gate2 to Source Voltage
V
G2S
8 (
10)
*1
V
Gate1 to Drain Voltage
V
G1D
18
V
Gate2 to Drain Voltage
V
G2D
18
V
Drain Current
I
D
25
mA
Total Power Dissipation
P
D
200
mW
Channel Temperature
T
ch
125
C
Storage Temperature
T
stg
55 to +125
C
*1 R
L
10 k
RF AMPLIFIER FOR UHF TV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
Document No. P10576EJ2V0DS00 (2nd edition)
(Previous No. TD-2265)
Date Published August 1995 P
Printed in Japan
2.8
+0.2
0.1
1.5
+0.2
0.1
0.4
+0.1
0.05
0.4
+0.1
0.05
0.6
+0.1
0.05
0.4
+0.1
0.05
1.1
+0.2
0.1
0.16
+0.1
0.06
0.8
0 to 0.1
5
5
5
5
2.90.2
(1.8)
(1.9)
0.95
0.85
12
43
1. Source
2. Drain
3. Gate 2
4. Gate 1
PACKAGE DIMENSIONS
(Unit: mm)
1989
3SK224
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain to Source Breakdown
BV
DSX
18
V
V
G1S
= V
G2S
= 2 V, I
D
= 10
A
Voltage
Drain Current
I
DSX
0.5
15.0
mA
V
DS
= 6 V, V
G2S
= 3 V, V
G1S
= 0.5 V
Gate1 to Source Cutoff
V
G1S(off)
1.5
+0.5
V
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10
A
Voltage
Gate2 to Source Cutoff
V
G2S(off)
1.0
+1.0
V
V
DS
= 6 V, V
G1S
= 3 V, I
D
= 10
A
Voltage
Gate1 Reverse Current
I
G1SS
20
nA
V
DS
= 0, V
G2S
= 0, V
G1S
=
8 V
Gate2 Reverse Current
I
G2SS
20
nA
V
DS
= 0, V
G1S
= 0, V
G2S
=
8 V
Forward Transfer
|y
fs
|
18
22
mS
V
DS
= 5 V, V
G2S
= 4 V, I
D
= 10 mA
Admittance
f = 1 kHz
Input Capacitance
C
iss
1.2
1.7
2.2
pF
Output Capacitance
C
DSS
0.5
0.9
1.2
pF
Reverse Transfer
C
rss
0.015
0.025
pF
Capacitance
Power Gain
G
PS
15.0
17.0
dB
Noise Figure
NF
1.8
2.5
dB
I
DSX
Classification
Class
U94/UID*
U95/UIE*
Marking
U94
U95
I
DSX
(mA)
0.5 to 7.0
5.0 to 15.0
* Old Specification/New Specification
PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage due
to those voltage or fields.
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10 mA
f = 1 MHz
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10 mA
f = 900 MHz
3SK224
3
TYPICAL CHARACTERISTICS (T
A
= 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
400
300
200
100
0
25
50
75
100
125
T
A
Ambient Temperature C
P
T
Total Power Dissipation mW
0.5
0
0.5
1.0
1.5
2.0
V
G1S
Gate1 to Source Voltage V
I
D
Drain Current mA
25
20
15
10
5
0
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
2.0 V
1.5 V
1.0 V
0.5 V
V
G2S
= 3.0 V
2.5 V
V
DS
= 6 V
0.5
0
0.5
1.0
1.5
2.0
V
G1S
Gate1 to Source Voltage V
|y
fs
| Forward Transfer Admittance mS
40
32
24
16
8
0
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
1.5 V
1.0 V
0.5 V
V
G2S
= 3.0 V
0
3
6
9
12
15
V
DS
Drain to Source Voltage V
I
D
Drain Current mA
25
20
15
10
5
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1.2 V
0.8 V
0.6 V
0.4 V
V
G1S
= 1.4 V
1.0 V
V
G2S
= 3 V
0
4
8
12
16
20
I
D
Drain Current mA
|y
fs
| Forward Transfer Admittance mS
40
32
24
16
8
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
2.0 V
1.5 V
1.0 V
0.5 V
V
G2S
= 3.0 V
V
DS
= 6 V
f = 1 kHz
2.5 V
0.2 V
V
DS
= 6 V
f = 1 kHz
2.0 V
2.5 V
1.0
0
1.0
2.0
3.0
4.0
V
G2S
Gate2 to Source Voltage V
C
iss
Input Capacitance pF
5.0
4.0
3.0
2.0
1.0
0
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
I
D
= 10 mA
(at V
DS
= 6 V
V
G2S
= 3 V)
f = 1 MHz
3SK224
4
I
D
= 10 mA
(at V
DS
= 6 V
V
G2S
= 3 V)
f = 1 MHz
OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
2.5
2.0
1.5
1.0
0.5
0
1.0
0
1.0
2.0
3.0
4.0
V
G2S
Gate2 to Source Voltage V
C
DSS
Output Capacitance pF
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
10
5
0
2.0
0
2.0
4.0
6.0
8.0
V
G2S
Gate2 to Source Voltage V
G
PS
Power Gain dB
NF Noise Figure dB
20
10
0
10
20
f = 900 MHz
I
D
= 10 mA
(at V
DS
= 6 V
V
G2S
= 3 V)
G
ps
NF
900 MHz G
PS
& NF TEST CIRCUIT
V
G2S
1 000 pF
47 k
1 000 pF
1 000 pF
1 000 pF
V
DD
V
G1S
L
1
, L
2
: 35
5
0.2 mm
OUTPUT
50
INPUT
50
47 k
to 10 pF
to 10 pF
to 10 pF
to 10 pF
L
1
L
2
RFC
3SK224
5
[MEMO]
2
3SK224
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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
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property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
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the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
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The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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