1993
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK253
FEATURES
Low V
DD
Use
:
(V
DS
= 3.5 V)
Driving Battery
Low Noise Figure :
NF = 1.8 dB TYP. (f = 900 MHz)
High Power Gain :
G
PS
= 18.0 dB TYP. (f = 900 MHz)
Suitable for use as RF amplifier in UHF TV tuner.
Automatically Mounting :
Embossed Type Taping
Package
:
4 Pins Mini Mold
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Drain to Source Voltage
V
DSX
18
V
Gate1 to Source Voltage
V
G1S
8
*1
V
Gate2 to Source Voltage
V
G2S
8
*1
V
Gate1 to Drain Voltage
V
G1D
18
V
Gate2 to Drain Voltage
V
G2D
18
V
Drain Current
I
D
25
mA
Total Power Dissipation
P
D
200
*2
mW
Channel Temperature
T
ch
125
C
Storage Temperature
T
stg
55 to +125
C
*1: R
L
10 k
*2: Free air
PRECAUTION:
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
fields.
RF AMPLIFIER FOR UHF TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
2
3
1
4
2.90.2
(1.8)
0.95
0.85
+0.1
0.05
0.4
+0.1
0.05
0.6
(1.9)
+0.1
0.05
0.4
+0.1
0.05
0.4
0.8
0 to 0.1
+0.1
0.06
0.16
PACKAGE DIMENSIONS
(Unit: mm)
PIN CONNECTIONS
1. Source
2. Drain
3. Gate2
4. Gate1
+0.2
0.3
2.8
+0.2
0.1
1.5
+0.2
0.1
1.1
5
5
5
5
Document No. P10583EJ2V0DS00 (2nd edition)
(Previous No. TD-2372)
Date Published August 1995 P
Printed in Japan
3SK253
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain to Source Breakdown Voltage
BV
DSX
18
V
V
G1S
= V
G2S
= 2 V, I
D
= 10
A
Drain Current
I
DSX
0.5
7.0
mA
V
DS
= 3.5 V, V
G2S
= 3 V, V
G1S
= 0.75 V
Gate1 to Source Cutoff Voltage
V
G1S(off)
1.0
0
+1.0
V
V
DS
= 3.5 V, V
G2S
= 3 V, I
D
= 10
A
Gate2 to Source Cutoff Voltage
V
G2S(off)
0
0.5
1.0
V
V
DS
= 3.5 V, V
G1S
= 3 V, I
D
= 10
A
Gate1 Reverse Current
I
G1SS
20
nA
V
DS
= 0, V
G2S
= 0, V
G1S
=
6 V
Gate2 Reverse Current
I
G2SS
20
nA
V
DS
= 0, V
G1S
= 0, V
G2S
=
6 V
Forward Transfer Admittance
|y
fs
|
14
19
24
mS
V
DS
= 3.5 V, V
G2S
= 3 V, I
D
= 7 mA
f = 1 kHz
Input Capacitance
C
iss
1.5
2.0
2.5
pF
V
DS
= 3.5 V, V
G2S
= 3 V, I
D
= 7 mA
Output Capacitance
C
oss
0.5
1.0
1.5
pF
f = 1 MHz
Reverse Transfer Capacitance
C
rss
0.01
0.03
pF
Power Gain
G
ps
15
18
21
dB
V
DS
= 3.5 V, V
G2S
= 3 V, I
D
= 7 mA
Noise Figure
NF
1.8
3.0
dB
f = 900 MHz
I
DSX
Classification
Rank
U1G/UAG*
Marking
U1G
I
DSX
(mA)
0.5 to 7.0
* Old specification / New specification
3SK253
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
Ambient Temperature C
P
D
Total Power Dissipation mW
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
Drain to Source Voltage V
I
D
Drain Current mA
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
V
G1S
Gate1 to Source Voltage V
I
D
Drain Current mA
0
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
V
G1S
Gate1 to Source Voltage V
|y
fs
| Forward Transfer Admittance mS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
Drain Current mA
|y
fs
| Forward Transfer Admittance mS
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
V
G2S
Gate2 to Source Voltage V
C
iss
Input Capacitance pF
100
25
50
75
100
125
V
G2S
= 3.0 V
V
G1S
= 1.2 V
1.0 V
0.8 V
0.6 V
0.4 V
0.2 V
0
5
10
15
20
25
5
10
V
DS
= 3.5 V
V
G2S
= 3.5 V
3.0 V
2.5 V
5
10
15
20
25
0.5
1.0
1.5
2.0
2.5
V
DS
= 3.5 V
f = 1 kHz
0
0.5
8
16
24
32
40
0
0.5
1.0
1.5
2.0
V
DS
= 3.5 V
f = 1 kHz
0
8
16
24
32
40
10
20
V
G2S
= 3.5 V
3.0 V
2.5 V
1.5 V
1.0 V
I
D
= 7 mA
(at V
DS
= 3.5 V,
V
G2S
= 3.0 V)
f = 1 MHz
1.0
0
1.0
2.0
3.0
4.0
1.0
2.0
3.0
4.0
2.0 V
1.5 V
1.0 V
3.0 V
2.5 V
2.0 V
1.5 V
1.0 V
V
G2S
= 3.5 V
2.0 V
5.0
0
200
300
400
3SK253
4
I
D
= 7 mA
(at V
DS
= 3.5 V,
V
G2S
= 3.0 V)
f = 1 MHz
OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
V
G2S
Gate2 to Source Voltage V
C
oss
Output Capacitance pF
1.0
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
V
G2S
Gate2 to Source Voltage V
G
PS
Power Gain dB
0
0
1.0
2.0
3.0
4.0
1.0
20
1.0
2.0
3.0
4.0
0
0.5
1.0
1.5
2.0
2.5
NF Noise Figure dB
10
0
10
20
I
D
= 7 mA
(at V
DS
= 3.5 V,
V
G2S
= 3.0 V)
f = 900 MHz
G
PS
NF
10
5
0
G
PS
AND NF TEST CIRCUIT AT f = 900 MHz
V
G2S
1 000 pF
47 k
1 000 pF
to 10 pF
to 10 pF
INPUT
50
L
1
47 k
RFC
L
2
to 10 pF
to 10 pF
50
1 000 pF
1 000 pF
V
G1S
V
DD
L
1
, L
2
; 35
5
0.2 mm
OUTPUT
3SK253
5
[MEMO]
2
3SK253
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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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