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Электронный компонент: 3SK299

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1995
DATA SHEET
MES FIELD EFFECT TRANSISTOR
3SK299
RF AMP. FOR UHF TV TUNER
N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR
4 PIN SMALL MINI MOLD
Document No. P11034EJ1V0DS00 (1st edition)
Date Published December 1995 P
Printed in Japan
FEATURES
Suitable for use as RF amplifier in UHF TV tuner.
Low C
rss
: 0.02 pF TYP.
High G
PS
: 20 dB TYP.
Low NF
: 1.1 dB TYP.
4 PIN SMALL MINI MOLD PACKAGE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Drain to Source Voltage
V
DSX
13
V
Gate1 to Source Voltage
V
G1S
4.5
V
Gate2 to Source Voltage
V
G2S
4.5
V
Drain Current
I
D
40
mA
Total Power Dissipation
P
T
120
mW
Channel Temperature
T
ch
125
C
Storage Temperature
T
stg
55 to +125
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain Current
I
DSX
10
A
V
DS
= 13 V, V
G1S
= 4 V, V
G2S
= 0
Drain Current
I
DSS
5
20
40
mA
V
DS
= 5 V, V
G2S
= 0, V
G1S
= 0
Gate1 to Source Cutoff Voltage
V
G1S(off)
3.5
V
V
DS
= 5 V, V
G2S
= 0 , I
D
= 100
A
Gate2 to Source Cutoff Voltage
V
G2S(off)
3.5
V
V
DS
= 5 V, V
G1S
= 0, I
D
= 100
A
Gate1 Reverse Current
I
G1SS
10
A
V
DS
= 0, V
G1S
= 4 V, V
G2S
= 0
Gate2 Reverse Current
I
G2SS
10
A
V
DS
= 0, V
G2S
= 4 V, V
G1S
= 0
Forward Transfer Admittance
|y
fs
|
18
25
35
ms
V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA
f = 1.0 kHz
Input Capacitance
C
iss
0.5
1.0
1.5
pF
V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA
Reverse Transfer Capacitance
C
rss
0.02
0.03
pF
f = 1 MHz
Power Gain
G
PS
16.0
20.0
dB
V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA
Noise Figure
NF
1.1
2.5
dB
f = 900 MHz
I
DSS
Classification
Unit: mA
Class
U71
U72
U73
U74
Marking
U71
U72
U73
U74
I
DSS
5 to 15
10 to 25
20 to 35
30 to 40
PACKAGE DIMENSIONS
in millimeters
2.10.2
1.250.1
2
3
1
4
2.00.2
(1.25)
0.65
0.60
+0.1 0.05
0.3
+0.1 0.05
0.4
+0.1 0.05
0.3
+0.1 0.05
0.3
0.90.1
0.3
+0.1 0.05
0.15
1. Source
2. Drain
3. Gate 2
4. Gate 1
0 to 0.1
(1.3)
3SK299
2
TYPICAL CHARACTERISTICS (T
A
= 25 C)
0
25
50
75
100
125
100
200
300
400
T
A
Ambient Temperature C
P
T
Total Power Dissipation mW
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
V
DS
= 5 V
V
G2S
= 1.0 V
0.5 V
0 V
0.5 V
1.0
0
+1.0
V
G1S
Gate 1 to Source Voltage V
0
10
20
30
I
D
Drain Current mA
1.0
0
+1.0
0
10
20
30
V
G1S
Gate 1 to Source Voltage V
y
fs
Forward Transfer Admittance mS
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
V
G2S
= 1.0 V
0.5 V
0 V
0.5 V
V
DS
= 5 V
f = 1 kHz
0
20
30
10
20
30
I
D
Drain Current mA
y
fs
Forward Transfer Admittance mS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G2S
= 1.0 V
V
DS
= 5 V
f = 1 kHz
V
G2S
= 0.5 V
10
1.0
+1.0
1.0
2.0
V
G2S
Gate 2 to Source Voltage V
C
iss
Input Capacitance pF
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
0
V
DS
= 5 V
f = 1 MHz
V
G2S
= 1 V at I
D
= 10 mA
V
G2S
= 1 V at I
D
= 5 mA
0
3.0
+2.0
0
30
V
G2S
Gate 2 to Source Voltage V
G
PS
Power Gain dB
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
V
DS
= 5 V
V
G2S
= 1 V
at I
D
= 10 mA
f = 900 MHz
45
15
15
30
10
5
0
NF Noise Figure dB
2.0
1.0
0
+1.0
G
PS
NF
3SK299
3
10
15
25
I
D
Drain Current mA
G
PS
Power Gain dB
POWER GAIN AND NOISE FIGURE vs.
DRAIN CURRENT
V
DS
= 5 V
V
G2S
= 1 V
f = 900 MHz
0
20
10
5
10
5
0
NF Noise Figure dB
5
G
PS
NF
10
V
DS
Drain to Source Voltage V
G
PS
Power Gain dB
POWER GAIN AND NOISE FIGURE vs.
DRAIN TO SOURCE VOLTAGE
0
20
10
5
0
NF Noise Figure dB
5
NF
G
PS
V
G2S
= 1 V
V
G2S
= 0.5 V
V
G2S
= 2 V
I
D
= 10 mA
f = 900 MHz
20
S-PARAMETER (V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA)
FREQUENCY
S11
S21
S12
S22
MHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100.0000
0.999
3.3
2.359
177.2
0.006
122.3
0.969
1.3
200.0000
1.000
7.2
2.389
169.3
0.004
123.0
0.981
2.9
300.0000
0.998
9.3
2.313
164.4
0.000
145.0
0.979
3.3
400.0000
0.974
13.4
2.233
160.0
0.004
79.2
0.967
5.6
500.0000
1.005
15.7
2.420
158.4
0.007
29.7
0.999
5.8
600.0000
0.942
19.1
2.300
150.0
0.003
65.0
0.958
7.7
700.0000
0.968
22.2
2.332
145.5
0.004
45.5
0.997
8.5
800.0000
0.920
25.2
2.229
141.5
0.008
80.1
0 957
9.4
900.0000
0.952
28.9
2.447
136.8
0.004
8.3
0.999
12.5
1000.0000
0.898
29.4
2.303
131.1
0.001
50.9
0.968
11.1
1100.0000
0.915
35.1
2.348
125.8
0.004
71.4
0.984
14.8
1200.0000
0.879
35.2
2.367
123.5
0.000
91.1
0.989
13.0
3SK299
4
900 MHz G
PS
AND NF TEST CIRCUIT
V
G2S
(1 V)
1 000 pF
47 k
1 000 pF
to 10 pF
OUTPUT
50
to 10 pF
INPUT
50
to 10 pF
to 10 pF
1 000 pF
1 000 pF
L
2
L
1
47 k
RFC
V
G1S
V
DD
(5 V)
L
1
, L
2
35
5
0.2 mm
V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA
3SK299
5
[MEMO]