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Электронный компонент: AC10FSMA

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confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
THYRISTORS
AC10DSMA,AC10FSMA
10 A RESIN INSULATION TYPE TRIAC
DATA SHEET
Document No. D13661EJ4V0DS00 (4th edition)
Date Published June 2004 NS CP(K)
Printed in Japan
2002
The mark shows major revised points.

DESCRIPTION
The AC10DSMA and AC10FSMA are resin insulation type
TRIACs with an effective current of 10 A (T
C
= 85C).
These products are covered with resin mold on the entire case
and are electrically insulated with electrodes, giving them a
considerable advantage over conventional TRIACs when
mounting on a heatsink board or performing high-density
mounting.
These products features ratings and electrical characteristics
equal to TO-220AB package TRIAC and a high reliability design.
FEATURES
Insulation type TRIAC fully covered with resin on the entire
case other than electrode leads
Insulation voltage and conduction equal to conventional mica
and polyester film
Can be replaced with TO-220AB package
High allowable on-current when using a single unit
APPLICATIONS
Non-contact switches of motor speed control, heater temperature control, lamp light control
PACKAGE DRAWING (Unit: mm)
10.5 MAX.
7 0.2
3.2 0.2
3.0 MAX.
1.3 0.2
0.8 0.1
2.54 TYP.
2.54 TYP.
1.5 0.2
5 0.2
13.5 MIN.
12 0.2
5

0.1
17 0.2
2.8 0.2
4.7 MAX.
2.5 0.1
0.5 0.1
1
2 3
TRIAC
1: T
1
2: T
2
3: Gate
Standard weight: 2 g
*
*
: T
C
test bench-mark
Data Sheet D13661EJ4V0DS
2
AC10DSMA,AC10FSMA
MAXIMUM RATINGS
Parameter Symbol
AC10DSMA
AC10FSMA
Unit
Remarks
Non-repetitive Peak Off-state Voltage
V
DSM
500
700 V
-
Repetitive Peak Off-state Voltage
V
DRM
400
600 V
-
Effective On-state Current
I
T(RMS)
10
(T
C
= 85C)
A
Refer to Figure 11 and 12.
Surge On-state Current
I
TSM
80 (50 Hz 1 cycle)
A
Refer to Figure 2.
88 (60 Hz 1 cycle)
Fusing Current
i
T
2
dt
28 (1 ms
t 10 ms)
A
2
s
-
Critical Rate Rise of On-state Current
dI
T
/dt 50
A/
s
-
Peak Gate Power Dissipation
P
GM
5.0
(f
50 Hz, Duty 10%) W
-
Average Gate Power Dissipation
P
G(AV)
0.5 W
-
Peak Gate Current
I
GM
3
(f
50 Hz, Duty 10%)
A
-
Junction Temperature
T
j
-40+125
C
-
Storage Temperature
T
stg
-55+150
C
-
ELECTRICAL CHARACTERISTICS (T
j
= 25
C)
Parameter Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Remarks
Repetitive Peak Off-state Current
I
DRM
V
DM
= V
DRM
T
j
= 25C
-
-
100
A
-
T
j
= 125C
-
-
2 mA
-
On-state Voltage
V
TM
I
TM
= 10 A
-
-
1.3 V
Refer
to
Figure 1.
Gate Trigger Current
Mode I
I
GT
V
DM
= 12 V,
T
2
+, G+
-
-
20 mA
Refer
to
Figure 4.
II
R
L
= 30
T
2
-, G+
-
-
-
III
T
2
-, G-
-
-
20
IV
T
2
+, G
-
-
-
20
Gate Trigger Voltage
Mode I
V
GT
V
DM
= 12 V,
T
2
+, G+
-
-
1.5 V
Refer
to
Figure 4.
II
R
L
= 30
T
2
-, G+
-
-
-
III
T
2
-, G-
-
-
1.5
IV
T
2
+, G
-
-
-
1.5
Gate Non-trigger Voltage
V
GD
T
j
= 125C, V
DM
=
2
1
V
DRM
0.3
-
-
V
-
Holding Current
I
H
V
DM
= 24 V, I
TM
= 10 A
-
30
-
mA
-
Critical Rate Rise of Off-state Voltage
dv/dt
T
j
= 125C, V
DM
=
3
2
V
DRM
-
100
-
V
/
s
-
Commutating Critical Rate Rise of
Off-state Voltage
(dv/dt)c T
j
= 125C,
(di
T
/dt)c =
-5 A/ms, V
D
= 400
V
10
-
-
V
/
s
-
Thermal Resistance
Note
R
th(j-c)
Junction-to-case
AC
-
-
3.5 C/W
Refer
to
Figure 13.
Note The thermal resistance with a 50 Hz or 60 Hz sine wave current, as shown in the following expression:

R
th(j-c)
=
)
AV
(
T
C
(max)
j
P
T
T
-
T
j(max)
: Maximum junction temperature
T
C
: Case temperature
P
T(AV)
: Average on-dissipation
Data Sheet D13661EJ4V0DS
3
AC10DSMA,AC10FSMA
TYPICAL CHARACTERISTICS
Figure 1. i
T
vs.
T
CHARACTERISTIC
Figure 2. I
TSM
RATING
i
T
- On-state
Current - A
100
10
1.0
0.1
50
5
0.5
0
1
2
3
4
5
MAX.
T
C
= 125C
25C
I
TS
M
- S
u
rge
On
-state Current - A
140
120
100
80
60
40
20
0
1
10
5
50
100
0
N = 1
I
TSM
2
Initial T
j
= 125C
50 Hz
60 Hz
T
- On-state Voltage - V
Cycles - N
Figure 3. GATE RATING
Figure 4. GATE CHARACTERISTIC
V
G
- Gate Voltag
e - V
10
8
6
4
2
0
0
3.0
2.5
2.0
1.5
1.0
0.5
P
G(AV)
= 0.5 W
T
j
=
-40 to +125C
P
GM
= 5 W
f
50 Hz
Duty
10%
V
GT
- Gate
Trigg
e
r Voltage - V
2.0
1.5
1.0
0.5
0
0
40
30
20
10
Mode
I, III, IV
-40C
25C
125C
I
G
- Gate Current - A
I
GT
- Gate Trigger Current - mA
Figure 5. I
GT
vs. T
A
CHARACTERISTIC
Figure 6. V
GT
vs. T
A
CHARACTERISTIC
I
GT
- Gate
Tri
gge
r
Curre
nt - mA
1000
100
10
1
-40
120
80
40
0
Mode
I, III, IV
V
GT
- Gate
Trigg
e
r Voltage - V
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-40
120
80
40
0
Mode
I, III, IV
T
A
- Ambient Temperature - C
T
A
- Ambient Temperature - C
Data Sheet D13661EJ4V0DS
4
AC10DSMA,AC10FSMA
Figure 7. i
GT
vs.
CHARACTERISTIC
Figure 8.
GT
vs.
CHARACTERISTIC
i
GT
- Gate T
r
i
g
ger
Curre
nt - mA
10000
1000
100
10
1
1
1000
100
10
Mode
I, III, IV
T
A
= 25C
GT
- Gate T
r
igge
r Voltage - V
5
4
3
2
1
0
1
1000
100
10
Mode
I, III, IV
T
A
= 25C
- Pulse Width -
s
- Pulse Width -
s
Figure 9. I
H
vs. T
A
CHARACTERISTIC
Figure 10. P
T(AV)
vs. I
T(RMS)
CHARACTERISTIC
I
H
- Holding Cu
rr
ent - mA
1000
100
10
1
-20
100
120
80
60
40
20
0
12
11
10
9
8
7
6
5
4
3
2
1
0
0
12
5
4
3
2
1
6
11
10
9
8
7
T
A
- Ambient Temperature - C
P
T
(
AV)
-
On-state
Average Power
Dissipation - W
I
T(RMS)
- Effective On-state Current - A
Figure 11. T
C
vs. I
T(RMS)
RATING
Figure 12. T
A
vs. I
T(RMS)
RATING
T
C
- C
a
se Tempe
r
ature
- C
140
120
100
80
60
40
20
0
0
5
4
3
2
1
6
11
10
9
8
7
12
T
A

- Ambient Te
mperatur
e -
C
140
120
100
80
60
40
20
0
0
2.0
1.0
I
T(RMS)
- Effective On-state Current - A
I
T(RMS)
- Effective On-state Current - A
Data Sheet D13661EJ4V0DS
5
AC10DSMA,AC10FSMA

Figure 13. Z
th
CHARACTERISTIC
Z
th
-
Tra
n
sient Th
ermal Impedanc
e -

C/W
100
10
1
0.1
10 k
100 k
1 k
100
10
1
0.1
Junction to ambient
Junction to case
Cycles (50 Hz)

AC10DSMA,AC10FSMA








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without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
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products and/or types are available in every country. Please check with an NEC Electronics sales
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M8E 02. 11-1