1998
Document No. D11739EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
COMPOUND TRANSISTOR
BB1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The BB1 Series is an N type small signal transistor and enables the reduction of component counts and
downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic
appliances and OA equipments such as VCRs and TVs.
FEATURES
Up to 0.7 A current drive available
On-chip bias resistor
Low power consumption during drive
QUALITY GRADES
Standard
Please refer to "Quality Grades on NEC Semiconductor
Devices" (Document No. C11531E) published by NEC Corporation
to know the specification of quality grade on the devices and its
recommended applications.
PACKAGE DRAWING (UNIT: mm)
BB1 SERIES LISTS
Products
R
1
(K
)
R
2
(K
)
BB1A4A
-
10
BB1L2Q
0.47
4.7
BB1A3M
1.0
1.0
BB1F3P
2.2
10
BB1J3P
3.3
10
BB1L3N
4.7
10
BB1A4M
10
10
Electrode Connection
1. Emitte (E)
2. Collector (C)
3. Base (B)
Data Sheet D11739EJ2V0DS
2
BB1 SERIES
ABSOLUTE MAXIMUM RATINGS (Ta = 25
C)
Parameter
Symbol
Ratings
Unit
Collector to base volgate
V
CBO
30
V
Colletor to emitter voltage
V
CEO
25
V
Emitter to base voltage
V
EBO
10
V
Collector current (DC)
I
C(DC)
0.7
A
Collector current (Pulse)
I
C(pulse)
Note 1
1.0
A
Base current (DC)
I
B(DC)
0.02
A
Total power dissipation
P
T
250
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Note 1 PW
10 ms, duty cycle 50 %
BB1A4A
ELECTRICAL CHARACTERISTICS (Ta = 25
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 30 V, I
E
= 0
100
nA
DC current gain
h
FE1
Note 2
V
CE
= 2.0 V, I
C
= 0.1 A
300
-
DC current gain
h
FE2
Note 2
V
CE
= 2.0 V, I
C
= 0.5 A
300
-
DC current gain
h
FE3
Note 2
V
CE
= 2.0 V, I
C
= 0.7 A
135
-
Collector saturation voltage
V
CE(sat)
Note 2
I
C
= 0.5 A, I
B
= 5 mA
0.27
0.4
V
Low level input voltage
V
IL
Note 2
V
CE
= 5.0 V, I
C
= 100
A
0.3
V
Input resistance
R
1
-
-
-
E-to-B resistance
R
2
7
10
13
k
Note 2 PW
350
s, duty cycle 2 %
BB1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 30 V, I
E
= 0
100
nA
DC current gain
h
FE1
Note 2
V
CE
= 2.0 V, I
C
= 0.1 A
150
400
-
DC current gain
h
FE2
Note 2
V
CE
= 2.0 V, I
C
= 0.5 A
300
700
-
DC current gain
h
FE3
Note 2
V
CE
= 2.0 V, I
C
= 0.7 A
135
600
-
Low level output voltage
V
OL
Note 2
V
IN
= 5.0 V, I
C
= 0.5 A
0.2
0.3
V
Low level input voltage
V
IL
Note 2
V
CE
= 5.0 V, I
C
= 100
A
0.3
V
Input resistance
R
1
329
470
611
E-to-B resistance
R
2
3.29
4.7
6.11
k
Note 2 PW
350
s, duty cycle 2 %
BB1 SERIES
M8E 00. 4
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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