1998
Document No. D16182EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
COMPOUND TRANSISTOR
HD1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
DATA SHEET
2002
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confirm that this is the latest version.
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availability and additional information.
FEATURES
High current drives such as IC outputs and actuators available
On-chip bias resistor
Low power consumption during drive
HD1 SERIES LISTS
Products
Marking
R
1
(K
)
R
2
(K
)
HD1A3M
LP
1.0
1.0
HD1F3P
LQ
2.2
10
HD1L3N
LR
4.7
10
HD1A4M
LS
10
10
HD1L2Q
LT
0.47
4.7
HD1F2Q
LU
0.22
2.2
HD1A4A
LX
-
10
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
80
V
Collector to emitter voltage
V
CEO
60
V
Emitter to base voltage
V
EBO
10
V
Collector current (DC)
I
C(DC)
1.0
A
Collector current (Pulse)
I
C(pulse)
*
2.0
A
Base current (DC)
I
B(DC)
0.02
A
Total power dissipation
P
T
**
2.0
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
* PW
10 ms, duty cycle 50 %
** When 0.7 mm
16 cm
2
ceramic board is used
Data Sheet D16182EJ2V0DS
2
HD1 SERIES
HD1A3M
ELECTRICAL CHARACTERISTICS (Ta = 25
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 60 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 2.0 V, I
C
= 0.1 A
80
-
DC current gain
h
FE2
**
V
CE
= 2.0 V, I
C
= 0.5 A
200
-
DC current gain
h
FE3
**
V
CE
= 2.0 V, I
C
= 1.0 A
200
-
Low level output voltage
V
OL
**
V
IN
= 5.0 V, I
C
= 0.4 A
0.35
V
Low level input voltage
V
IL
**
V
CE
= 5.0 V, I
C
= 100
A
0.3
V
Input resistance
R
1
0.7
1.0
1.3
k
E-to-B resistance
R
2
0.7
1.0
1.3
k
** PW
350
s, duty cycle 2 %
HD1F3P
ELECTRICAL CHARACTERISTICS (Ta = 25
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 60 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 2.0 V, I
C
= 0.1 A
200
630
-
DC current gain
h
FE2
**
V
CE
= 2.0 V, I
C
= 0.5 A
300
780
-
DC current gain
h
FE3
**
V
CE
= 2.0 V, I
C
= 1.0 A
200
430
-
Low level output voltage
V
OL
**
V
IN
= 5.0 V, I
C
= 0.3 A
0.12
0.3
V
Low level input voltage
V
IL
**
V
CE
= 5.0 V, I
C
= 100
A
0.5
0.3
V
Input resistance
R
1
1.54
2.2
2.86
k
E-to-B resistance
R
2
7
10
13
k
** PW
350
s, duty cycle 2 %
HD1L3N
ELECTRICAL CHARACTERISTICS (Ta = 25
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 60 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 2.0 V, I
C
= 0.1 A
200
-
DC current gain
h
FE2
**
V
CE
= 2.0 V, I
C
= 0.5 A
300
-
DC current gain
h
FE3
**
V
CE
= 2.0 V, I
C
= 1.0 A
200
-
Low level output voltage
V
OL
**
V
IN
= 5.0 V, I
C
= 0.2 A
0.2
V
Low level input voltage
V
IL
**
V
CE
= 5.0 V, I
C
= 100
A
0.3
V
Input resistance
R
1
3.29
4.7
6.11
k
E-to-B resistance
R
2
7
10
13
k
** PW
350
s, duty cycle 2 %
Data Sheet D16182EJ2V0DS
3
HD1 SERIES
HD1A4M
ELECTRICAL CHARACTERISTICS (Ta = 25
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 60 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 2.0 V, I
C
= 0.1 A
200
-
DC current gain
h
FE2
**
V
CE
= 2.0 V, I
C
= 0.5 A
300
-
DC current gain
h
FE3
**
V
CE
= 2.0 V, I
C
= 1.0 A
200
-
Low level output voltage
V
OL
**
V
IN
= 5.0 V, I
C
= 0.1 A
0.2
V
Low level input voltage
V
IL
**
V
CE
= 5.0 V, I
C
= 100
A
0.3
V
Input resistance
R
1
7
10
13
k
E-to-B resistance
R
2
7
10
13
k
** PW
350
s, duty cycle 2 %
HD1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 60 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 2.0 V, I
C
= 0.1 A
200
-
DC current gain
h
FE2
**
V
CE
= 2.0 V, I
C
= 0.5 A
300
-
DC current gain
h
FE3
**
V
CE
= 2.0 V, I
C
= 1.0 A
200
-
Low level output voltage
V
OL
**
V
IN
= 5.0 V, I
C
= 0.8 A
0.5
V
Low level input voltage
V
IL
**
V
CE
= 5.0 V, I
C
= 100
A
0.3
V
Input resistance
R
1
329
470
611
E-to-B resistance
R
2
3.29
4.7
6.11
k
** PW
350
s, duty cycle 2 %
HD1F2Q
ELECTRICAL CHARACTERISTICS (Ta = 25
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 60 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 2.0 V, I
C
= 0.1 A
100
-
DC current gain
h
FE2
**
V
CE
= 2.0 V, I
C
= 0.5 A
300
-
DC current gain
h
FE3
**
V
CE
= 2.0 V, I
C
= 1.0 A
200
-
Low level output voltage
V
OL
**
V
IN
= 5.0 V, I
C
= 0.8 A
0.5
V
Low level input voltage
V
IL
**
V
CE
= 5.0 V, I
C
= 100
A
0.3
V
Input resistance
R
1
154
220
286
E-to-B resistance
R
2
1.54
2.2
2.86
k
** PW
350
s, duty cycle 2 %
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