1998
Document No. D16183EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
COMPOUND TRANSISTOR
HQ1 SERIES
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
DATA SHEET
2002
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confirm that this is the latest version.
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availability and additional information.
FEATURES
Up to 2A high current drives such as ICs, motors, and solenoids
available
On-chip bias resistor
Low power consumption during drive
HQ1 SERIES LISTS
Products
Marking
R
1
(K
)
R
2
(K
)
HQ1L2N
DP
0.47
1.0
HQ1A3M
DQ
1.0
1.0
HQ1F3M
DR
2.2
2.2
HQ1F3P
DS
2.2
10
HQ1L2Q
DT
0.47
4.7
HQ1F2Q
DU
0.22
2.2
HQ1A4A
DX
-
10
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
-20
V
Collector to emitter voltage
V
CEO
-20
V
Emitter to base voltage
V
EBO
-10
V
Collector current (DC)
I
C(DC)
-2.0
A
Collector current (Pulse)
I
C(pulse)
*
-3.0
A
Base current (DC)
I
B(DC)
-0.04
A
Total power dissipation
P
T
**
2.0
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
* PW
10 ms, duty cycle 50 %
** When 0.7 mm
16 cm
2
ceramic board is used
Data Sheet D16183EJ1V0DS
2
HQ1 SERIES
HQ1L2N
ELECTRICAL CHARACTERISTICS (Ta = 25
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
-20 V, I
E
= 0
-100
nA
DC current gain
h
FE1
**
V
CE
=
-2.0 V, I
C
=
-0.1 A
50
-
DC current gain
h
FE2
**
V
CE
=
-2.0 V, I
C
=
-1.0 A
150
-
DC current gain
h
FE3
**
V
CE
=
-2.0 V, I
C
=
-2.0 A
50
-
Low level output voltage
V
OL
**
V
IN
=
-5.0 V, I
C
=
-0.7 A
-0.55
V
Low level input voltage
V
IL
**
V
CE
=
-5.0 V, I
C
=
-100
A
-0.3
V
Input resistance
R
1
329
470
611
E-to-B resistance
R
2
0.7
1.0
1.3
k
** PW
350
s, duty cycle 2 %
HQ1A3M
ELECTRICAL CHARACTERISTICS (Ta = 25
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
-20 V, I
E
= 0
-100
nA
DC current gain
h
FE1
**
V
CE
=
-2.0 V, I
C
=
-0.1 A
50
-
DC current gain
h
FE2
**
V
CE
=
-2.0 V, I
C
=
-1.0 A
100
-
DC current gain
h
FE3
**
V
CE
=
-2.0 V, I
C
=
-2.0 A
50
-
Low level output voltage
V
OL
**
V
IN
=
-5.0 V, I
C
=
-0.5 A
-0.4
V
Low level input voltage
V
IL
**
V
CE
=
-5.0 V, I
C
=
-100
A
-0.3
V
Input resistance
R
1
0.7
1.0
1.3
k
E-to-B resistance
R
2
0.7
1.0
1.3
k
** PW
350
s, duty cycle 2 %
HQ1F3M
ELECTRICAL CHARACTERISTICS (Ta = 25
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
-20 V, I
E
= 0
-100
nA
DC current gain
h
FE1
**
V
CE
=
-2.0 V, I
C
=
-0.1 A
80
-
DC current gain
h
FE2
**
V
CE
=
-2.0 V, I
C
=
-1.0 A
150
-
DC current gain
h
FE3
**
V
CE
=
-2.0 V, I
C
=
-2.0 A
50
-
Low level output voltage
V
OL
**
V
IN
=
-5.0 V, I
C
=
-0.3 A
-0.3
V
Low level input voltage
V
IL
**
V
CE
=
-5.0 V, I
C
=
-100
A
-0.3
V
Input resistance
R
1
1.54
2.2
2.86
k
E-to-B resistance
R
2
1.54
2.2
2.86
k
** PW
350
s, duty cycle 2 %
Data Sheet D16183EJ1V0DS
3
HQ1 SERIES
HQ1F3P
ELECTRICAL CHARACTERISTICS (Ta = 25
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
-20 V, I
E
= 0
-100
nA
DC current gain
h
FE1
**
V
CE
=
-2.0 V, I
C
=
-0.1 A
200
-
DC current gain
h
FE2
**
V
CE
=
-2.0 V, I
C
=
-1.0 A
150
-
DC current gain
h
FE3
**
V
CE
=
-2.0 V, I
C
=
-2.0 A
50
-
Low level output voltage
V
OL
**
V
IN
=
-5.0 V, I
C
=
-0.3 A
-0.3
V
Low level input voltage
V
IL
**
V
CE
=
-5.0 V, I
C
=
-100
A
-0.3
V
Input resistance
R
1
1.54
2.2
2.86
k
E-to-B resistance
R
2
7
10
13
k
** PW
350
s, duty cycle 2 %
HQ1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
-20 V, I
E
= 0
-100
nA
DC current gain
h
FE1
**
V
CE
=
-2.0 V, I
C
=
-0.1 A
150
-
DC current gain
h
FE2
**
V
CE
=
-2.0 V, I
C
=
-1.0 A
150
-
DC current gain
h
FE3
**
V
CE
=
-2.0 V, I
C
=
-2.0 A
50
-
Low level output voltage
V
OL
**
V
IN
=
-5.0 V, I
C
=
-0.7 A
-0.55
V
Low level input voltage
V
IL
**
V
CE
=
-5.0 V, I
C
=
-100
A
-0.3
V
Input resistance
R
1
329
470
611
E-to-B resistance
R
2
3.29
4.7
6.11
k
** PW
350
s, duty cycle 2 %
HQ1F2Q
ELECTRICAL CHARACTERISTICS (Ta = 25
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
-20 V, I
E
= 0
-100
nA
DC current gain
h
FE1
**
V
CE
=
-2.0 V, I
C
=
-0.1 A
80
-
DC current gain
h
FE2
**
V
CE
=
-2.0 V, I
C
=
-1.0 A
150
-
DC current gain
h
FE3
**
V
CE
=
-2.0 V, I
C
=
-2.0 A
50
-
Low level output voltage
V
OL
**
V
IN
=
-5.0 V, I
C
=
-0.7 A
-0.55
V
Low level input voltage
V
IL
**
V
CE
=
-5.0 V, I
C
=
-100
A
-0.3
V
Input resistance
R
1
154
220
286
k
E-to-B resistance
R
2
1.54
2.2
2.86
k
** PW
350
s, duty cycle 2 %
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